Effect of germanium on the kinetics of boron-oxygen defect generation and dissociation in Czochralski silicon

2010 ◽  
Vol 97 (16) ◽  
pp. 162107 ◽  
Author(s):  
Xuegong Yu ◽  
Peng Wang ◽  
Deren Yang
Keyword(s):  
Oxygen Defect ◽  
Defect Generation ◽  
Czochralski Silicon ◽  
Kinetics Of

scholarly journals Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon

2009 ◽  
Vol 105 (9) ◽  
pp. 093704 ◽  
Author(s):  
D. Macdonald ◽  
F. Rougieux ◽  
A. Cuevas ◽  
B. Lim ◽  
J. Schmidt ◽  
...  
Keyword(s):  
Oxygen Defect ◽  
Defect Generation ◽  
Czochralski Silicon ◽  
P Type

Precipitation of Oxygen and Mechanism of Stacking Fault Formation in Czochralski Silicon Bulk Crystals

1982 ◽  
Vol 14 ◽  
Author(s):  
Kazumi Wada ◽  
Naohisa Inoue ◽  
Jiro Osaka
Keyword(s):  
Growth Model ◽  
Growth Kinetics ◽  
Stacking Faults ◽  
Diffusional Growth ◽  
Czochralski Silicon ◽  
Self Diffusion ◽  
Diffusion Limited ◽  
Silicon Bulk ◽  
Precipitate Growth ◽  
Kinetics Of

ABSTRACTThis paper describes recent progress on nucleation and growth of oxide precipitates and stacking faults in Czochralski silicon. Conclusions on the growth kinetics of oxide precipitates are drawn from the experiments and analysis of growth kinetics of two-dimensional precipitates: The experimentally obtained growth kinetics, three-quarter power law is theoretically derived and the precipitate growth is demonstrated to be diffusion-limited by oxygen interstitials. The formation mechanism of stacking faults is the Bardeen-Herring mechanism. Based on diffusional growth model, the growth kinetics of stacking faults are analyzed, assuming a coexistence of self-interstitial supersaturation and vacancy undersaturation. It is found that the growth is driven by vacancies in undersaturation. Vacancy component of self-diffusion has been determined and found to be predominant at low temperature. The possibility of growth model proposed for increase of oxide precipitate density during annealing has been excluded. Both processes, homogeneous and heterogeneous nucleation, have been taking place during annealing.

An Alternative Model for the Kinetics of Light-Induced Defects in A-Si:H

1991 ◽  
Vol 219 ◽  
Author(s):  
Paulo V. Santos ◽  
W. B. Jackson ◽  
R. A. Street
Keyword(s):  
Time Dependence ◽  
Valence Band ◽  
Defect Formation ◽  
Defect Density ◽  
Generation Rate ◽  
Band Tail ◽  
Defect Generation ◽  
Wide Range ◽  
Induced Defects ◽  
Kinetics Of

ABSTRACTThe kinetics of light-induced defect generation in a-Si:H was investigated over a wide range of illumination intensities and temperatures. The defect density around 1016cm-3 exhibits a power-law time dependence Ns ∼ G2εfε with ε = 0.2 to 0.3, where G is the photo-carrier generation rate. A model for the kinetics of defect generation is proposed based on the existence of an exponential distribution of defect formation energies in the amorphous network, associated with the valence band tail states. The model reproduces the observed time dependence of the defect density with an exponent e determined by the exponential width of the valence band tail. The temperature dependence of the defect generation rate is well-reproduced by the model, which provides a connection between the Stabler-Wronski effect and the weak-bond model.

Growth kinetics of oxide precipitates in Czochralski silicon

1985 ◽  
Vol 71 (1) ◽  
pp. 111-117 ◽  
Author(s):  
Kazumi Wada ◽  
Naohisa Inoue
Keyword(s):  
Growth Kinetics ◽  
Czochralski Silicon ◽  
Kinetics Of

Defect Generation during Plastic Deformation of Si-Rich Cz-Grown SiGe Crystals

2009 ◽  
Vol 156-158 ◽  
pp. 295-298
Author(s):  
Nikolai Yarykin ◽  
Nikolay V. Abrosimov
Keyword(s):  
Solid Solution ◽  
Plastic Deformation ◽  
Absorption Spectra ◽  
Residual Strain ◽  
Wave Number ◽  
Ir Absorption ◽  
Defect Generation ◽  
Ir Absorption Spectra ◽  
Kinetics Of ◽  
Solution Decay

The IR absorption spectra and kinetics of the oxygen solid solution decay were studied in the Si1¡xGex crystals (0 · x · 0:055) plastically deformed at 680±C up to the 2{5% residual strain. It is found that the defects of non-dislocation nature, the dislocation trails, are formed during the plastic deformation of all studied SiGe crystals. The ¯ne structure of the IR absorption spectra around the 1000 cm¡1 wave number is found to be nearly identical in the pure Si (no Ge) samples and Si1¡xGex crystals with x · 0:02. At higher x the ¯ne structure was not detected due to the alloy-related broadening. In all studied crystals, the decay of the supersaturated oxygen solid solution at 650±C is determined by oxygen agglomeration at the dislocation trails as shown by the comparison with the samples annealed at 1150±C.

scholarly journals Modelling Kinetics of the Boron-Oxygen Defect System

2016 ◽  
Vol 92 ◽  
pp. 42-51 ◽  
Author(s):  
Brett Hallam ◽  
Malcolm Abbott ◽  
Jose Bilbao ◽  
Phill Hamer ◽  
Nicholas Gorman ◽  
...  
Keyword(s):  
Oxygen Defect ◽  
Defect System ◽  
Kinetics Of

Quantification of characteristic parameters for the dissociation kinetics of iron–boron pairs in Czochralski silicon

2011 ◽  
Vol 64 (3) ◽  
pp. 217-220 ◽  
Author(s):  
Xiaodong Zhu ◽  
Xuegong Yu ◽  
Xiaoqiang Li ◽  
Peng Wang ◽  
Deren Yang
Keyword(s):  
Characteristic Parameters ◽  
Dissociation Kinetics ◽  
Czochralski Silicon ◽  
Kinetics Of

Activation Kinetics of the Boron–oxygen Defect in Compensated n- and p-type Silicon Studied by High-Injection Micro-Photoluminescence

2017 ◽  
Vol 7 (4) ◽  
pp. 988-995 ◽  
Author(s):  
Chang Sun ◽  
Hieu Trong Nguyen ◽  
Hang Cheong Sio ◽  
Fiacre Emile Rougieux ◽  
Daniel Macdonald
Keyword(s):  
Oxygen Defect ◽  
Activation Kinetics ◽  
Type Silicon ◽  
High Injection ◽  
P Type ◽  
Kinetics Of
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