Electroluminescence of silicon nanocrystallites prepared by pulsed laser ablation in reduced pressure inert gas

1998 ◽  
Vol 83 (10) ◽  
pp. 5427-5432 ◽  
Author(s):  
Takehito Yoshida ◽  
Yuka Yamada ◽  
Takaaki Orii
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Inert Gas ◽  
Reduced Pressure ◽  
Silicon Nanocrystallites

Optical properties of silicon nanocrystallites prepared by pulsed laser ablation in inert gas ambient

1996 ◽  
Author(s):  
Takehito Yoshida ◽  
Yuka Yamada ◽  
Shigeru Takeyama ◽  
Takaaki Orii ◽  
Ikurou Umezu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Inert Gas ◽  
Silicon Nanocrystallites

Temperature-Dependent Photoluminescence of Silicon Nanocrystallites Prepared by Inert-Gas-Ambient Pulsed Laser Ablation

1997 ◽  
Vol 486 ◽  
Author(s):  
I. Umezu ◽  
S. Yamaguchi ◽  
K. Shibata ◽  
A. Sugimura ◽  
Y. Yamada ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Temperature Dependence ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Inert Gas ◽  
Nonradiative Recombination ◽  
Recombination Processes ◽  
Silicon Nanocrystallites ◽  
The Difference ◽  
Si Nanocrystallites

AbstractThe inert-gas-ambient pulsed laser ablation technique is a promising method for preparing Si nanocrystallites. We measured the temperature dependence of photoluminescence (PL) spectra to investigate radiative and nonradiative recombination processes in the nanocrystallites prepared using this method. The Si nanocrystallites showed visible PL bands in the red (1.6 eV) and green (2.1 eV) spectral regions. The intensities of the red and green PL increased with decreasing temperature and then saturated below 80 K. This temperature dependence was compared with that of other photoluminescent Si materials. It was shown that the PL quantum efficiency of the Si nanocrystallites was larger than that of a-Si:H at high temperatures. One of the reasons for the difference in the temperature dependence between the Si nanocrystallite and a-Si:H is the change in the role of defects in the nonradiative recombination process.

Synthesis and processing of silicon nanocrystallites using a pulsed laser ablation supersonic expansion method

1994 ◽  
Vol 64 (14) ◽  
pp. 1821-1823 ◽  
Author(s):  
E. Werwa ◽  
A. A. Seraphin ◽  
L. A. Chiu ◽  
Chuxin Zhou ◽  
K. D. Kolenbrander
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Expansion Method ◽  
Supersonic Expansion ◽  
Silicon Nanocrystallites ◽  
Synthesis And Processing

CONTROLLED GROWTH OF ISOLATED VANADIUM NANOSTRUCTURES VIA PULSED LASER ABLATION

2009 ◽  
Vol 08 (06) ◽  
pp. 589-593 ◽  
Author(s):  
A. B. PHILLIPS ◽  
B. S. SHIVARAM
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Laser Ablation ◽  
Composite Structures ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Inert Gas ◽  
Parameter Control ◽  
Scanning Electron ◽  
Shape And Size

Utilizing pulsed laser ablation we show that it is possible to grow isolated nanostructures of vanadium whose shape and size are controllable simply by changing the background pressure of an inert gas in the growth chamber. The nanostructures obtained are characterized through scanning electron microscopy measurements. The range of nanostructures obtained by a simple one parameter control suggest that further synthesis of more sophisticated nanoscale composite structures should be possible if multistep growth and processing are employed.

Semiconductor nanocrystallite formation using inert gas ambient pulsed laser ablation and its application to light-emitting devices

1999 ◽  
Author(s):  
Takehito Yoshida ◽  
Yuka Yamada ◽  
Nobuyasu Suzuki ◽  
Toshiharu Makino ◽  
Takaaki Orii ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Inert Gas ◽  
Light Emitting ◽  
Light Emitting Devices

Structures and optical properties of silicon nanocrystallites prepared by pulsed-laser ablation in inert background gas

2000 ◽  
Vol 76 (11) ◽  
pp. 1389-1391 ◽  
Author(s):  
Nobuyasu Suzuki ◽  
Toshiharu Makino ◽  
Yuka Yamada ◽  
Takehito Yoshida ◽  
Seinosuke Onari
Keyword(s):  
Optical Properties ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Silicon Nanocrystallites ◽  
Background Gas
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