Electroluminescent diode with nanocrystalline Si active layer prepared by pulsed-laser ablation in inert gas

1998 ◽  
Author(s):  
Takehito Yoshida ◽  
Yuka Yamada ◽  
Takaaki Orii
Keyword(s):  
Laser Ablation ◽  
Active Layer ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Inert Gas ◽  
Nanocrystalline Si

Optical properties of silicon nanocrystallites prepared by pulsed laser ablation in inert gas ambient

1996 ◽  
Author(s):  
Takehito Yoshida ◽  
Yuka Yamada ◽  
Shigeru Takeyama ◽  
Takaaki Orii ◽  
Ikurou Umezu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Inert Gas ◽  
Silicon Nanocrystallites

CONTROLLED GROWTH OF ISOLATED VANADIUM NANOSTRUCTURES VIA PULSED LASER ABLATION

2009 ◽  
Vol 08 (06) ◽  
pp. 589-593 ◽  
Author(s):  
A. B. PHILLIPS ◽  
B. S. SHIVARAM
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Laser Ablation ◽  
Composite Structures ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Inert Gas ◽  
Parameter Control ◽  
Scanning Electron ◽  
Shape And Size

Utilizing pulsed laser ablation we show that it is possible to grow isolated nanostructures of vanadium whose shape and size are controllable simply by changing the background pressure of an inert gas in the growth chamber. The nanostructures obtained are characterized through scanning electron microscopy measurements. The range of nanostructures obtained by a simple one parameter control suggest that further synthesis of more sophisticated nanoscale composite structures should be possible if multistep growth and processing are employed.

Semiconductor nanocrystallite formation using inert gas ambient pulsed laser ablation and its application to light-emitting devices

1999 ◽  
Author(s):  
Takehito Yoshida ◽  
Yuka Yamada ◽  
Nobuyasu Suzuki ◽  
Toshiharu Makino ◽  
Takaaki Orii ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Inert Gas ◽  
Light Emitting ◽  
Light Emitting Devices

High-yield synthesis of silicon nanoparticles via the perpendicular pulsed laser ablation in the inert gas

2010 ◽  
Vol 6 (2) ◽  
pp. 81-84 ◽  
Author(s):  
Hai-jun Niu ◽  
Li Zhang ◽  
Jia-ying Zhu ◽  
Mi-lin Zhang ◽  
Xu-duo Bai
Keyword(s):  
Laser Ablation ◽  
Silicon Nanoparticles ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Inert Gas ◽  
High Yield

scholarly journals Combination of pulsed laser ablation and inert gas condensation for the synthesis of nanostructured nanocrystalline, amorphous and composite materials

2019 ◽  
Vol 1 (11) ◽  
pp. 4513-4521 ◽  
Author(s):  
Soumabha Bag ◽  
Ananya Baksi ◽  
Di Wang ◽  
Robert Kruk ◽  
Cahit Benel ◽  
...  
Keyword(s):  
Composite Materials ◽  
Laser Ablation ◽  
Nanostructured Materials ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Inert Gas ◽  
Gas Condensation ◽  
Inert Gas Condensation

A new PL-IGC system for the synthesis and property tuning of amorphous and crystalline nanostructured materials.

The comparison of growing process of nanocrystalline Si films deposited by pulsed laser ablation in He, Ne, and Ar

2006 ◽  
Author(s):  
Lizhi Chu ◽  
Yang Zhou ◽  
Changyu Yan ◽  
Deqi Wu ◽  
Zheng Yan ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Si Films ◽  
Nanocrystalline Si

Effects of annealing on luminescence properties of Si nanocrystallites prepared by pulsed laser ablation in inert gas

2001 ◽  
Vol 15 (1-2) ◽  
pp. 129-131 ◽  
Author(s):  
I. Umezu ◽  
G. Yamazaki ◽  
T. Yamaguchi ◽  
A. Sugimura ◽  
T. Makino ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Inert Gas ◽  
Luminescence Properties ◽  
Si Nanocrystallites

Temperature-Dependent Photoluminescence of Silicon Nanocrystallites Prepared by Inert-Gas-Ambient Pulsed Laser Ablation

1997 ◽  
Vol 486 ◽  
Author(s):  
I. Umezu ◽  
S. Yamaguchi ◽  
K. Shibata ◽  
A. Sugimura ◽  
Y. Yamada ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Temperature Dependence ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Inert Gas ◽  
Nonradiative Recombination ◽  
Recombination Processes ◽  
Silicon Nanocrystallites ◽  
The Difference ◽  
Si Nanocrystallites

AbstractThe inert-gas-ambient pulsed laser ablation technique is a promising method for preparing Si nanocrystallites. We measured the temperature dependence of photoluminescence (PL) spectra to investigate radiative and nonradiative recombination processes in the nanocrystallites prepared using this method. The Si nanocrystallites showed visible PL bands in the red (1.6 eV) and green (2.1 eV) spectral regions. The intensities of the red and green PL increased with decreasing temperature and then saturated below 80 K. This temperature dependence was compared with that of other photoluminescent Si materials. It was shown that the PL quantum efficiency of the Si nanocrystallites was larger than that of a-Si:H at high temperatures. One of the reasons for the difference in the temperature dependence between the Si nanocrystallite and a-Si:H is the change in the role of defects in the nonradiative recombination process.

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