Structures and optical properties of silicon nanocrystallites prepared by pulsed-laser ablation in inert background gas

2000 ◽  
Vol 76 (11) ◽  
pp. 1389-1391 ◽  
Author(s):  
Nobuyasu Suzuki ◽  
Toshiharu Makino ◽  
Yuka Yamada ◽  
Takehito Yoshida ◽  
Seinosuke Onari
Keyword(s):  
Optical Properties ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Silicon Nanocrystallites ◽  
Background Gas

Optical properties of silicon nanocrystallites prepared by pulsed laser ablation in inert gas ambient

1996 ◽  
Author(s):  
Takehito Yoshida ◽  
Yuka Yamada ◽  
Shigeru Takeyama ◽  
Takaaki Orii ◽  
Ikurou Umezu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Inert Gas ◽  
Silicon Nanocrystallites

Annealing effects on structures and optical properties of silicon nanostructured films prepared by pulsed-laser ablation in inert background gas

2001 ◽  
Vol 90 (10) ◽  
pp. 5075-5080 ◽  
Author(s):  
Toshiharu Makino ◽  
Yuka Yamada ◽  
Nobuyasu Suzuki ◽  
Takehito Yoshida ◽  
Seinosuke Onari
Keyword(s):  
Optical Properties ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Nanostructured Films ◽  
Annealing Effects ◽  
Background Gas

Electroluminescence of monodispersed silicon nanocrystallites synthesized by pulsed laser ablation in inert background gas

2002 ◽  
Vol 197-198 ◽  
pp. 594-597 ◽  
Author(s):  
Toshiharu Makino ◽  
Yuka Yamada ◽  
Nobuyasu Suzuki ◽  
Takehito Yoshida ◽  
Seinosuke Onari
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Silicon Nanocrystallites ◽  
Background Gas

Effect of Non-equilibrium Pulsed Ejection of Si Species into Background Gas on the Formation of Si Nanocrystallite and Nanocrystal-film

2011 ◽  
Vol 1305 ◽  
Author(s):  
Ikurou Umezu ◽  
Shunto Okubo ◽  
Akira Sugimura
Keyword(s):  
Laser Ablation ◽  
Film Growth ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Hydrogen Gas ◽  
Gas Pressure ◽  
Spatial Confinement ◽  
The Individual ◽  
Background Gas ◽  
Non Equilibrium

ABSTRACTThe Si nanocrystal-films are prepared by pulsed laser ablation of Si target in a mixture of helium and hydrogen gas. The total gas pressure and hydrogen partial gas pressure were varied to control structure of nanocrystal-film. The surface of Si nanocrystallite was hydrogenated and degree of hydrogenation increased with increasing hydrogen partial gas pressure. The aggregate structure of nanocrystal-film depended on both the total gas pressure and the hydrogen partial gas pressure. The former and the latter alter spatial confinement of Si species during deposition and the surface hydrogenation of individual nanocrystal, respectively. Spatial confinement increases probability of collision between nanocrystals in the plume. While, surface hydrogenation prevents coalescence of nanocrystals. The individual or aggregated nanocrystals formed in the plume reach the substrate and the nanocrystal-film is deposited on the substrate. The non-equilibrium growth processes during pulsed laser ablation are essential for the formation of the surface structure and the subsequent nanocrystal-film growth. Our results indicate that the structure of nanocrystal-film depends on the probabilities of collision and coalescence between nanocrystals in the plume. These probabilities can be varied by controlling the total gas pressure and the hydrogen partial gas pressure.

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