Optical properties of silicon nanocrystallites prepared by pulsed laser ablation in inert gas ambient

1996 ◽  
Author(s):  
Takehito Yoshida ◽  
Yuka Yamada ◽  
Shigeru Takeyama ◽  
Takaaki Orii ◽  
Ikurou Umezu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Inert Gas ◽  
Silicon Nanocrystallites

Structures and optical properties of silicon nanocrystallites prepared by pulsed-laser ablation in inert background gas

2000 ◽  
Vol 76 (11) ◽  
pp. 1389-1391 ◽  
Author(s):  
Nobuyasu Suzuki ◽  
Toshiharu Makino ◽  
Yuka Yamada ◽  
Takehito Yoshida ◽  
Seinosuke Onari
Keyword(s):  
Optical Properties ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Silicon Nanocrystallites ◽  
Background Gas

Temperature-Dependent Photoluminescence of Silicon Nanocrystallites Prepared by Inert-Gas-Ambient Pulsed Laser Ablation

1997 ◽  
Vol 486 ◽  
Author(s):  
I. Umezu ◽  
S. Yamaguchi ◽  
K. Shibata ◽  
A. Sugimura ◽  
Y. Yamada ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Temperature Dependence ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Inert Gas ◽  
Nonradiative Recombination ◽  
Recombination Processes ◽  
Silicon Nanocrystallites ◽  
The Difference ◽  
Si Nanocrystallites

AbstractThe inert-gas-ambient pulsed laser ablation technique is a promising method for preparing Si nanocrystallites. We measured the temperature dependence of photoluminescence (PL) spectra to investigate radiative and nonradiative recombination processes in the nanocrystallites prepared using this method. The Si nanocrystallites showed visible PL bands in the red (1.6 eV) and green (2.1 eV) spectral regions. The intensities of the red and green PL increased with decreasing temperature and then saturated below 80 K. This temperature dependence was compared with that of other photoluminescent Si materials. It was shown that the PL quantum efficiency of the Si nanocrystallites was larger than that of a-Si:H at high temperatures. One of the reasons for the difference in the temperature dependence between the Si nanocrystallite and a-Si:H is the change in the role of defects in the nonradiative recombination process.

Optical Properties of Silicon Nanocrystallites Prepared by Excimer Laser Ablation in Inert Gas

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 1361-1365 ◽  
Author(s):  
Yuka Yamada ◽  
Takaaki Orii ◽  
Ikurou Umezu ◽  
Shigeru Takeyama ◽  
Takehito Yoshida
Keyword(s):  
Optical Properties ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Inert Gas ◽  
Excimer Laser Ablation ◽  
Silicon Nanocrystallites
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