High-responsivity, low-noise, room-temperature, self-mixing terahertz detector realized using floating antennas on a GaN-based field-effect transistor

2012 ◽  
Vol 100 (1) ◽  
pp. 013506 ◽  
Keyword(s):  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Low Noise ◽  
Terahertz Detector ◽  
High Responsivity ◽  
Effect Transistor

Spin transport in epitaxial Fe3O4/GaAs lateral structured device

2022 ◽  
Author(s):  
Zhaocong Huang ◽  
Wenqing Liu ◽  
Jian Liang ◽  
Qingjie Guo ◽  
Ya Zhai ◽  
...  
Keyword(s):  
Data Storage ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Spin Transport ◽  
Spintronic Devices ◽  
Spin Dependent Transport ◽  
Effect Transistor ◽  
Dependent Transport ◽  
Further Development

Abstract Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor (SFET), which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4 electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias-dependence. Understanding the spin dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFET.

Frequency-shift keyed generation with an optically controlled GaAs field-effect transistor in a surface-acoustic-wave oscillator circuit

1987 ◽  
Vol 65 (8) ◽  
pp. 929-936
Author(s):  
O. Berolo
Keyword(s):  
Acoustic Wave ◽  
Frequency Shift ◽  
Surface Acoustic Wave ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Open Circuit ◽  
Low Noise ◽  
Optical Modulator ◽  
Oscillator Circuit ◽  
Effect Transistor

A prototype circuit for potential optical integration was developed and evaluated for the generation of frequency-shift keyed (FSK) signals by simultaneously exploiting surface-acoustic wave (SAW) technology and the optical response of the GaAs field-effect transistor (FET).A SAW delay line to be utilized in the feedback path of an oscillator circuit was designed for operation at the fundamental frequency of 111 MHz and operated at its 12th harmonic (1.33 GHz). A low-noise FET was incorporated into the circuit in series with the SAW delay, and a low-power He:Ne laser was focussed through an optical modulator onto the FET structure. The gate bias, which controls the phase shift in the feedback loop of the oscillator, was applied via the open-circuit photovoltage induced at the Schottky-barrier junction of the FET.The optical modulator was driven by a pseudorandom bit generator to obtain FSK generation by the oscillator circuit. Results of the frequency spectrum of the oscillator signal as a function of bit rate and light intensity on the FET were obtained. The successful performance of the circuit indicated that integration of all these elements on GaAs would yield a useful device for FSK signal generation.Un prototype de circuit pour intégration optique potentielle a été développé et évalué pour la génération de signaux FSK (frequency-shift keyed), en exploitant simultanéement la technologie des ondes acoustiques de surface et la réponse optique du transistor GaAs à effet de champ.

Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effect Transistor Working at Room Temperature.

Nano Letters ◽  
2015 ◽  
Vol 15 (5) ◽  
pp. 2958-2964 ◽  
Author(s):  
Romain Lavieville ◽  
François Triozon ◽  
Sylvain Barraud ◽  
Andrea Corna ◽  
Xavier Jehl ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Metal Oxide ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Effect Transistor ◽  
Metal Oxide Silicon ◽  
Made In

Low‐noise GaAs field‐effect transistor made by molecular beam epitaxy

1982 ◽  
Vol 41 (7) ◽  
pp. 633-635 ◽  
Author(s):  
M. Feng ◽  
V. K. Eu ◽  
I. J. D’Haenens ◽  
M. Braunstein
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistor ◽  
Low Noise ◽  
Effect Transistor
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