Modeling and analysis of photomodulated reflectance and double crystal x-ray diffraction measurements of tensilely strained InGaAs/InGaAsP quantum well structures

1998 ◽  
Vol 83 (9) ◽  
pp. 4909-4917 ◽  
Author(s):  
G. Rowland ◽  
T. J. C. Hosea
Keyword(s):  
Quantum Well ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Modeling And Analysis ◽  
Quantum Well Structures ◽  
X Ray

scholarly journals High Resolution X-Ray Diffraction Investigations of Si/SiGe Quantum Well Structures and Si/Ge Short-Period Superlattices

1993 ◽  
Vol 84 (3) ◽  
pp. 475-489
Author(s):  
G. Bauer ◽  
E. Koppensteiner ◽  
P. Hamberger ◽  
J. Nützel ◽  
G. Abstreiter ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Well ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray ◽  
Short Period ◽  
Short Period Superlattices

X-ray diffraction in quantum-well structures

1996 ◽  
Vol 221 (1-4) ◽  
pp. 487-493 ◽  
Author(s):  
E. Zolotoyabko ◽  
Y. Finkelstein ◽  
M. Blumina ◽  
D. Fekete
Keyword(s):  
Quantum Well ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray

GaAs Quantum Well Infrared Photodetectors Grown by OMVPE

1990 ◽  
Vol 216 ◽  
Author(s):  
W. S. Hobson ◽  
A. Zussman ◽  
B. F. Levine ◽  
S. J. Pearton ◽  
V. Swaminathan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Dark Current ◽  
Infrared Photodetectors ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Electrochemical Capacitance ◽  
Double Crystal ◽  
X Ray ◽  
Quantum Well Infrared Photodetectors ◽  
Capacitance Voltage

ABSTRACTWe have grown, fabricated, and measured GaAs quantum well infrared photodetectors (QWIPs) using organometallic vapor phase epitaxy (OMVPE). The epitaxial layers were characterized by electrochemical capacitance-voltage profiling, double-crystal X-ray diffraction, cathodoluminescence, and infrared absorption. Dark current, responsivity spectra, and detectivity were measured for the QWIP devices. The performance of these QWIPs was comparable to detectors grown using MBE. This is of importance since OMVPE has advantages for wafer throughout and cost.

scholarly journals Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence

2000 ◽  
Vol 87 (3) ◽  
pp. 1251-1254 ◽  
Author(s):  
J. F. Chen ◽  
P. Y. Wang ◽  
J. S. Wang ◽  
N. C. Chen ◽  
X. J. Guo ◽  
...  
Keyword(s):  
Quantum Well ◽  
Strain Relaxation ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray

High Resolution X-ray Diffraction Characterization of [111]B Oriented InGaAs/GaAs Mqw Structures

1995 ◽  
Vol 39 ◽  
pp. 439-448
Author(s):  
A Sanz-Hervas ◽  
A Sacedón ◽  
E.J Abril ◽  
J.L Sanchez-Rojas ◽  
C. Villar ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Well ◽  
Structural Information ◽  
Multiple Quantum Well ◽  
Growth Conditions ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray

In this work we apply high-resolution X-ray diffractometry to the study of InGaAs/GaAs multiple quantum well structures on (001) and(lll)B GaAs substrates. The samples consisted of p-i-n diodes with a multiple quantum well embedded in the i-region and were simultaneously grown on (001) and (111)B substrates by molecular beam epitaxy. For the characterization we have used symmetric and asymmetric reflections at different azimuthal positions. The interpretation of the diffraction profiles has been possible thanks to our recently developed simulation model, which allows the calculation of any reflection regardless of the substrate orientation. X-ray results about composition and thickness are very similar in the samples simultaneously grown on both orientations as expected from our specific growth conditions. The information obtained from X-ray characterization is consistent with the results of photoluminescence and photocurrent measurements within the experimental uncertainty of the techniques. In (lll)B samples, X-ray diffractometry provides structural information which cannot be easily obtained from optical characterization techniques.

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