Determination of critical layer thickness and strain tensor in InxGa1−xAs/GaAs quantum‐well structures by x‐ray diffraction

Y. C. Chen; P. K. Bhattacharya

doi:10.1063/1.354030

Determination of critical layer thickness and strain tensor in InxGa1−xAs/GaAs quantum‐well structures by x‐ray diffraction

Journal of Applied Physics ◽

10.1063/1.354030 ◽

1993 ◽

Vol 73 (11) ◽

pp. 7389-7394 ◽

Cited By ~ 35

Author(s):

Y. C. Chen ◽

P. K. Bhattacharya

Keyword(s):

Quantum Well ◽

Layer Thickness ◽

Strain Tensor ◽

Critical Layer ◽

X Ray Diffraction ◽

Critical Layer Thickness ◽

Quantum Well Structures ◽

X Ray

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Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x‐ray diffraction

Applied Physics Letters ◽

10.1063/1.98004 ◽

1987 ◽

Vol 50 (15) ◽

pp. 980-982 ◽

Cited By ~ 179

Author(s):

P. J. Orders ◽

B. F. Usher

Keyword(s):

Layer Thickness ◽

Critical Layer ◽

X Ray Diffraction ◽

Critical Layer Thickness ◽

X Ray

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Comparison of X-ray diffraction methods for determination of the critical layer thickness for dislocation multiplication

Journal of Electronic Materials ◽

10.1007/s11664-999-0111-1 ◽

1999 ◽

Vol 28 (5) ◽

pp. 553-558 ◽

Cited By ~ 18

Author(s):

X. G. Zhang ◽

P. Li ◽

D. W. Parent ◽

G. Zhao ◽

J. E. Ayers ◽

...

Keyword(s):

Layer Thickness ◽

Critical Layer ◽

X Ray Diffraction ◽

Critical Layer Thickness ◽

X Ray ◽

Dislocation Multiplication

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Accurate determination of misfit strain, layer thickness, and critical layer thickness in ultrathin buried strained InGaAs/GaAs layer by x-ray diffraction

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586445 ◽

1992 ◽

Vol 10 (2) ◽

pp. 769 ◽

Cited By ~ 8

Author(s):

Y. C. Chen

Keyword(s):

Layer Thickness ◽

Accurate Determination ◽

Misfit Strain ◽

Gaas Layer ◽

Critical Layer ◽

X Ray Diffraction ◽

Critical Layer Thickness ◽

X Ray ◽

Strain Layer

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Enhanced nonradiative recombination in Al x Ga1−x N-based quantum wells thinner than the critical layer thickness determined by X-ray diffraction

Applied Physics Express ◽

10.35848/1882-0786/abe658 ◽

2021 ◽

Vol 14 (3) ◽

pp. 031007

Author(s):

Shuhei Ichikawa ◽

Mitsuru Funato ◽

Yoichi Kawakami

Keyword(s):

Quantum Wells ◽

Layer Thickness ◽

Critical Layer ◽

Nonradiative Recombination ◽

X Ray Diffraction ◽

Critical Layer Thickness ◽

X Ray

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Experimental studies of misfit dependence of critical layer thickness in pseudomorphic InGaAs single‐strained quantum‐well structures

Journal of Applied Physics ◽

10.1063/1.344272 ◽

1989 ◽

Vol 66 (5) ◽

pp. 2217-2219 ◽

Cited By ~ 30

Author(s):

Shang‐Lin Weng

Keyword(s):

Quantum Well ◽

Layer Thickness ◽

Experimental Studies ◽

Critical Layer ◽

Critical Layer Thickness ◽

Quantum Well Structures ◽

Strained Quantum Well

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X‐ray interferometry and its application to determination of layer thickness and strain in quantum‐well structures

Journal of Applied Physics ◽

10.1063/1.345189 ◽

1990 ◽

Vol 67 (10) ◽

pp. 6229-6236 ◽

Cited By ~ 37

Author(s):

H. Holloway

Keyword(s):

Quantum Well ◽

Layer Thickness ◽

Quantum Well Structures ◽

X Ray

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Critical layer thickness of strained-layer InGaAs/GaAs multiple quantum wells determined by double-crystal x-ray diffraction

Journal of Electronic Materials ◽

10.1007/bf02817701 ◽

1993 ◽

Vol 22 (11) ◽

pp. 1365-1368 ◽

Cited By ~ 5

Author(s):

C. A. Wang ◽

S. H. Groves ◽

J. H. Reinold ◽

D. R. Calawa

Keyword(s):

Quantum Wells ◽

Layer Thickness ◽

Multiple Quantum Wells ◽

Critical Layer ◽

Multiple Quantum ◽

X Ray Diffraction ◽

Critical Layer Thickness ◽

Double Crystal ◽

X Ray ◽

Strained Layer

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Thickness and composition determination of MBE-grown strained multiple quantum well structures by x-ray diffraction

10.1117/12.408332 ◽

2000 ◽

Cited By ~ 4

Author(s):

Brian F. Usher ◽

D. Zhou

Keyword(s):

Quantum Well ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

X Ray Diffraction ◽

Quantum Well Structures ◽

X Ray ◽

Composition Determination

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Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures

Applied Physics Letters ◽

10.1063/1.98984 ◽

1987 ◽

Vol 51 (13) ◽

pp. 1004-1006 ◽

Cited By ~ 118

Author(s):

I. J. Fritz ◽

P. L. Gourley ◽

L. R. Dawson

Keyword(s):

Quantum Well ◽

Layer Thickness ◽

Critical Layer ◽

Critical Layer Thickness ◽

Quantum Well Structures ◽

Strained Quantum Well

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Exact determination of Indium incorporation in (InxGa1–xN/GaN)-multiple quantum well structures by X-ray diffraction and -reflectivity and its impact on optical properties

Zeitschrift für Kristallographie - Crystalline Materials ◽

10.1524/zkri.219.4.191.30443 ◽

2004 ◽

Vol 219 (4) ◽

Cited By ~ 1

Author(s):

Fabian Schulze ◽

Jürgen Bläsing ◽

Armin Dadgar ◽

Alois Krost

Keyword(s):

Optical Properties ◽

Quantum Well ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

X Ray Diffraction ◽

Structural And Optical Properties ◽

Quantum Well Structures ◽

X Ray ◽

Exact Determination

AbstractWe studied the structural and optical properties of In

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