Kubo-Greenwood approach for the calculation of mobility in gate-all-around nanowire metal-oxide-semiconductor field-effect transistors including screened remote Coulomb scattering—Comparison with experiment

J. Dura; F. Triozon; S. Barraud; D. Munteanu; S. Martinie; J. L. Autran

doi:10.1063/1.4719081

Kubo-Greenwood approach for the calculation of mobility in gate-all-around nanowire metal-oxide-semiconductor field-effect transistors including screened remote Coulomb scattering—Comparison with experiment

Journal of Applied Physics ◽

10.1063/1.4719081 ◽

2012 ◽

Vol 111 (10) ◽

pp. 103710 ◽

Cited By ~ 7

Author(s):

J. Dura ◽

F. Triozon ◽

S. Barraud ◽

D. Munteanu ◽

S. Martinie ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Coulomb Scattering ◽

Comparison With Experiment

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Experimental Evaluation of Coulomb-Scattering-Limited Inversion-Layer Mobility of n-type Metal–Oxide–Semiconductor Field-Effect Transistors on Si(100), (110), and (111)-Surfaces: Impact of Correlation between Conductivity Mass and Normal Mass

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dc21 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DC21 ◽

Cited By ~ 2

Author(s):

Yukio Nakabayashi ◽

Takamitsu Ishihara ◽

Toshinori Numata ◽

Ken Uchida ◽

Shinichi Takagi

Keyword(s):

Metal Oxide ◽

Experimental Evaluation ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Coulomb Scattering ◽

Normal Mass

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On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors

Journal of Applied Physics ◽

10.1063/1.3669490 ◽

2011 ◽

Vol 110 (12) ◽

pp. 124503 ◽

Cited By ~ 2

Author(s):

S. M. Thomas ◽

M. J. Prest ◽

T. E. Whall ◽

D. R. Leadley ◽

P. Toniutti ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Coulomb Scattering ◽

Hafnium Silicate

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Coulomb scattering in high-κ gate stack silicon-on-insulator metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.2975993 ◽

2008 ◽

Vol 104 (6) ◽

pp. 063704 ◽

Cited By ~ 11

Author(s):

F. Jiménez-Molinos ◽

F. Gámiz ◽

L. Donetti

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Coulomb Scattering ◽

Gate Stack

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Quantitative Understanding of Electron Mobility Limited by Coulomb Scattering in Metal Oxide Semiconductor Field Effect Transistors with N2O and NO Oxynitrides

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.2597 ◽

2001 ◽

Vol 40 (Part 1, No. 4B) ◽

pp. 2597-2602 ◽

Cited By ~ 5

Author(s):

Takamitsu Ishihara ◽

Shin-ichi Takagi ◽

Masaki Kondo

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Coulomb Scattering ◽

Quantitative Understanding

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Remote Coulomb scattering in metal–oxide–semiconductor field effect transistors: Screening by electrons in the gate

Applied Physics Letters ◽

10.1063/1.1630169 ◽

2003 ◽

Vol 83 (23) ◽

pp. 4848-4850 ◽

Cited By ~ 36

Author(s):

F. Gámiz ◽

M. V. Fischetti

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Coulomb Scattering

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Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlOx-Limited Inversion Layer Mobility in n+-Polysilicon/HfAlOx/SiO2N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.7750 ◽

2005 ◽

Vol 44 (11) ◽

pp. 7750-7755 ◽

Cited By ~ 10

Author(s):

Naoki Yasuda ◽

Hirokazu Hisamatsu ◽

Hiroyuki Ota ◽

Wataru Mizubayashi ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Coulomb Scattering ◽

Weak Temperature Dependence

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901832 ◽

2019 ◽

Author(s):

Ryosho Nakane ◽

Shoichi Sato ◽

Masaaki Tanaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2019.2956497 ◽

2020 ◽

Vol 8 ◽

pp. 9-14 ◽

Cited By ~ 1

Author(s):

Ching-Sung Lee ◽

Yan-Ting Shen ◽

Wei-Chou Hsu ◽

Yi-Ping Huang ◽

Cheng-Yang You

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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