scholarly journals Formation of AlGaN and GaN epitaxial layer with high p-carrier concentration by pulse supply of source gases

AIP Advances ◽  
2012 ◽  
Vol 2 (1) ◽  
pp. 012177 ◽  
Author(s):  
Yoshinobu Aoyagi ◽  
Misaichi Takeuchi ◽  
Sohachi Iwai ◽  
Hideki Hirayama
Keyword(s):  
Carrier Concentration ◽  
Epitaxial Layer ◽  
Pulse Supply

Carrier Lifetimes in 4H-SiC Epitaxial Layers on the C-Face Enhanced by Carbon Implantation

2018 ◽  
Vol 924 ◽  
pp. 432-435 ◽  
Author(s):  
Mitsuhiro Kushibe ◽  
Johji Nishio ◽  
Ryosuke Iijima ◽  
Akira Miyasaka ◽  
Hirokuni Asamizu ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Layer Thickness ◽  
Epitaxial Layer ◽  
Carrier Lifetime ◽  
Epitaxial Layers ◽  
Carrier Lifetimes ◽  
Post Annealing

Carrier lifetime in low carrier concentration 4H-SiC epitaxial layers grown on the C-face was enhanced by using carbon implantation and post annealing. The measured carrier lifetime increased with the thickness of the epitaxial layer and was 11.4 µs for the 150 µm thick epitaxial layer. The internal carrier lifetime was estimated as 21 µs from the dependence of the measured carrier lifetime on the epitaxial layer thickness. This value is almost comparable to the reported values of the internal carrier lifetime for the layers grown on the Si-face.

Homo-Epitaxial Growth on 2° Off-Cut 4H-SiC(0001) Si-Face Substrates Using H2-SiH4-C3H8 CVD System

2014 ◽  
Vol 778-780 ◽  
pp. 214-217 ◽  
Author(s):  
Kentaro Tamura ◽  
Chiaki Kudou ◽  
Keiko Masumoto ◽  
Johji Nishio ◽  
Kazutoshi Kojima
Keyword(s):  
Confocal Microscopy ◽  
Epitaxial Growth ◽  
Carrier Concentration ◽  
Epitaxial Layer ◽  
Defect Density ◽  
Epitaxial Layers ◽  
Differential Interference Contrast ◽  
Step Bunching

We have grown epitaxial layers on 2° off-cut 4H-SiC(0001) Si-face substrates. The epitaxial layer surfaces on 2° off-cut substrates are more prone to generate step-bunching than on 4° off-cut substrates, which are observed by confocal microscopy with differential interference contrast. We have speculated that the step-bunching is generated at the beginning of an epitaxial growth. Triangular defect density of epitaxial layers on 2° off-cut substrates is as low as 0.7 cm–2 for the size corresponding to 150 mm. We have firstly reported distribution of 2° off-cut epitaxial layers for the 150-mm size using two 76.2-mm wafers: σ/mean = 3.3% for thickness, σ/mean = 7.3% for carrier concentration.

Dependence of 4H-SiC Epitaxial Layer Quality on Growth Conditions with Wafer Size Corresponding to 150 mm

2012 ◽  
Vol 1433 ◽  
Author(s):  
Chiaki Kudou ◽  
Kentaro Tamura ◽  
Takashi Aigo ◽  
Wataru Ito ◽  
Johji Nishio ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Carrier Concentration ◽  
Epitaxial Layer ◽  
Radial Direction ◽  
Defect Density ◽  
Growth Conditions ◽  
Thickness Uniformity ◽  
Homoepitaxial Growth ◽  
Major Parameter ◽  
Wafer Size

ABSTRACTHomoepitaxial growth on 4H-SiC Si-face substrates with sizes corresponding to 150 mm was carried out. The influence of growth conditions for uniformity and epitaxial defect density was investigated. A 150 mm size was realized by using two 76.2 mm wafers lined up in a radial direction. C/Si ratio is found to be a major parameter for controlling triangular defect density and the generation of step bunching. As a result, the surface morphology without bunched step structure and the triangular defect density with 0.5 cm−2 were obtained by decreasing C/Si ratio to 1.0 on the size corresponding to 150 mm. Under this condition, good carrier concentration and thickness uniformity of σ/mean =15.2 % and 1.7 % could be obtained.

An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method

2007 ◽  
Vol 556-557 ◽  
pp. 9-12 ◽  
Author(s):  
Jung Doo Seo ◽  
Joon Ho An ◽  
Jung Gon Kim ◽  
Jung Kyu Kim ◽  
Myung Ok Kyun ◽  
...  
Keyword(s):  
Growth Rate ◽  
Single Crystal ◽  
Carrier Concentration ◽  
Epitaxial Layer ◽  
Vapor Transport ◽  
Seed Surface ◽  
Bulk Growth ◽  
Seed Material ◽  
Transport Method

SiC single crystal ingots were prepared onto different seed material using sublimation PVT techniques and then their crystal quality was systematically compared. In this study, the conventional SiC seed material and the new SiC seed material with an inserted SiC epitaxial layer on a seed surface were used as a seed for SiC bulk growth. The inserted epitaxial layer was grown by a sublimation epitaxy method called the CST with a low growth rate of 2μm/h. N-type 2”-SiC single crystals exhibiting the polytype of 6H-SiC were successfully fabricated and carrier concentration levels of below 1017/cm3 were determined from the absorption spectrum and Hall measurements. The slightly higher growth rate and carrier concentration were obtained in SiC single crystal ingot grown on new SiC seed materials with the inserted epitaxial layer on the seed surface, maintaining the high quality.

Cristal-growth dynamics of n-doped gaAs

1992 ◽  
Vol 50 (2) ◽  
pp. 1544-1545
Author(s):  
Pham V. Huong ◽  
Stéphanie Bouchet ◽  
Jean-Claude Launay
Keyword(s):  
Crystal Growth ◽  
Spatial Resolution ◽  
Epitaxial Layer ◽  
Outer Surface ◽  
Gaas Substrate ◽  
Structural Modification ◽  
Growth Dynamics ◽  
Argon Laser ◽  
High Anisotropy ◽  
Crystal Gaas

Microstructure of epitaxial layers of doped GaAs and its crystal growth dynamics on single crystal GaAs substrate were studied by Raman microspectroscopy with a Dilor OMARS instrument equipped with a 1024 photodiode multichannel detector and a ion-argon laser Spectra-Physics emitting at 514.5 nm.The spatial resolution of this technique, less than 1 μm2, allows the recording of Raman spectra at several spots in function of thickness, from the substrate to the outer deposit, including areas around the interface (Fig.l).The high anisotropy of the LO and TO Raman bands is indicative of the orientation of the epitaxial layer as well as of the structural modification in the deposit and in the substrate at the interface.With Sn doped, the epitaxial layer also presents plasmon in Raman scattering. This fact is already very well known, but we additionally observed that its frequency increases with the thickness of the deposit. For a sample with electron density 1020 cm-3, the plasmon L+ appears at 930 and 790 cm-1 near the outer surface.

Low Temperature Deposition of Zinc Oxide Films

2003 ◽  
Vol 763 ◽  
Author(s):  
H. W. Lee ◽  
Y. G. Wang ◽  
S. P. Lau ◽  
B. K. Tay
Keyword(s):  
Zinc Oxide ◽  
Carrier Concentration ◽  
Vacuum Arc ◽  
Zno Films ◽  
Al Alloy ◽  
Pure Zinc ◽  
Zinc Oxide Films ◽  
Alloy Target ◽  
Temperature Deposition ◽  
Filtered Cathodic Vacuum Arc

AbstractA detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied. For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10-3 Ωcm, and that for Al-doped films was 8×10-4 Ωcm. The carrier concentration was found to increase with Al doping.

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