Theory of thermally stimulated charges in metal–oxide–semiconductor gate oxide

1998 ◽  
Vol 83 (2) ◽  
pp. 851-857 ◽  
Author(s):  
Jin Cai ◽  
Chih-Tang Sah
Keyword(s):  
Metal Oxide ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Octahedral-Structured Gigantic Precipitates as the Origin of Gate-Oxide Defects in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 812-817 ◽  
Author(s):  
Manabu Itsumi ◽  
Hideo Akiya ◽  
Takemi Ueki ◽  
Masato Tomita ◽  
Masataka Yamawaki
Keyword(s):  
Integrated Circuits ◽  
Metal Oxide ◽  
Large Scale ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Oxide Defects

scholarly journals Design and Analysis of Heavily Doped n+ Pocket Asymmetrical Junction-Less Double Gate MOSFET for Biomedical Applications

2020 ◽  
Vol 10 (7) ◽  
pp. 2499 ◽  
Author(s):  
Namrata Mendiratta ◽  
Suman Lata Tripathi ◽  
Sanjeevikumar Padmanaban ◽  
Eklas Hossain
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Biomedical Applications ◽  
Field Effect Transistor ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Oxide Interface ◽  
Heavily Doped ◽  
Effect Transistor

The Complementary Metal-Oxide Semiconductor (CMOS) technology has evolved to a great extent and is being used for different applications like environmental, biomedical, radiofrequency and switching, etc. Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) based biosensors are used for detecting various enzymes, molecules, pathogens and antigens efficiently with a less time-consuming process involved in comparison to other options. Early-stage detection of disease is easily possible using Field-Effect Transistor (FET) based biosensors. In this paper, a steep subthreshold heavily doped n+ pocket asymmetrical junctionless MOSFET is designed for biomedical applications by introducing a nanogap cavity region at the gate-oxide interface. The nanogap cavity region is introduced in such a manner that it is sensitive to variation in biomolecules present in the cavity region. The analysis is based on dielectric modulation or changes due to variation in the bio-molecules present in the environment or the human body. The analysis of proposed asymmetrical junctionless MOSFET with nanogap cavity region is carried out with different dielectric materials and variations in cavity length and height inside the gate–oxide interface. Further, this device also showed significant variation for changes in different introduced charged particles or region materials, as simulated through a 2D visual Technology Computer-Aided Design (TCAD) device simulator.

Excellence of Gate Oxide Integrity in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits Based onP-/P-Thin-Film Epitaxial Silicon Wafers

1997 ◽  
Vol 36 (Part 1, No. 5A) ◽  
pp. 2565-2570 ◽  
Author(s):  
Hirofumi Shimizu ◽  
Yuji Sugino ◽  
Norio Suzuki ◽  
Shogo Kiyota ◽  
Koichi Nagasawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
Metal Oxide ◽  
Large Scale ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Silicon Wafers ◽  
Oxide Semiconductor ◽  
Epitaxial Silicon ◽  
Gate Oxide Integrity

Gate oxide reliabilities in MOS (metal-oxide-semiconductor) structures with Ti-polycide gates

1998 ◽  
Vol 27 (4) ◽  
pp. L21-L25 ◽  
Author(s):  
H. S. Kim ◽  
D. H. Ko ◽  
D. L. Bae ◽  
N. I. Lee ◽  
D. W. Kim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures
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