Analysis of Fermi level pinning and surface state distribution in InAlAs heterostructures

1998 ◽  
Vol 83 (7) ◽  
pp. 3690-3695 ◽  
Author(s):  
W. Y. Chou ◽  
G. S. Chang ◽  
W. C. Hwang ◽  
J. S. Hwang
Nanoscale ◽  
2020 ◽  
Vol 12 (16) ◽  
pp. 8883-8889 ◽  
Author(s):  
Ronen Dagan ◽  
Yonatan Vaknin ◽  
Yossi Rosenwaks

Gap states and Fermi level pinning play an important role in all semiconductor devices, but even more in transition metal dichalcogenide-based devices due to their high surface to volume ratio and the absence of intralayer dangling bonds.


2009 ◽  
Vol 95 (14) ◽  
pp. 141914 ◽  
Author(s):  
K. I. Lin ◽  
H. C. Lin ◽  
J. T. Tsai ◽  
C. S. Cheng ◽  
Y. T. Lu ◽  
...  

1989 ◽  
Vol 63 (19) ◽  
pp. 2092-2095 ◽  
Author(s):  
L. S. O. Johansson ◽  
E. Landemark ◽  
C. J. Karlsson ◽  
R. I. G. Uhrberg

Nanoscale ◽  
2019 ◽  
Vol 11 (36) ◽  
pp. 16828-16836 ◽  
Author(s):  
Thibaut Gallet ◽  
David Grabowski ◽  
Thomas Kirchartz ◽  
Alex Redinger

Scanning tunnelling microscopy measurements reveal grain dependent changes in surface state density and workfunctions on polycrystalline CH3NH3PbI3 absorbers.


1995 ◽  
Vol 67 (16) ◽  
pp. 2350-2352 ◽  
Author(s):  
J. S. Hwang ◽  
W. Y. Chou ◽  
S. L. Tyan ◽  
H. H. Lin ◽  
T. L. Lee

2021 ◽  
Vol 118 (5) ◽  
pp. 052101
Author(s):  
Youjung Kim ◽  
Hyeongmin Cho ◽  
Kookrin Char

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