Semiconductor Electrodes: XLIX . Evidence for Fermi Level Pinning and Surface‐State Distributions from Impedance Measurements in Acetonitrile Solutions with Various Redox Couples

1983 ◽  
Vol 130 (8) ◽  
pp. 1680-1688 ◽  
Author(s):  
G. Nagasubramanian ◽  
B. L. Wheeler ◽  
A. J. Bard
Keyword(s):  
Fermi Level ◽  
Surface State ◽  
Impedance Measurements ◽  
Fermi Level Pinning ◽  
Redox Couples ◽  
Acetonitrile Solutions ◽  
Semiconductor Electrodes

Fermi level pinning or semiconductor electrodes in aqueous and non aqueous electrolytes: influence of the modification of the electrode surface

1989 ◽  
Vol 67 (3) ◽  
pp. 382-388 ◽  
Author(s):  
O. Savadogo
Keyword(s):  
Fermi Level ◽  
Acidic Medium ◽  
Open Circuit ◽  
Flat Band ◽  
Flat Band Potential ◽  
Fermi Level Pinning ◽  
Material Surfaces ◽  
Electrolyte Interface ◽  
Semiconductor Electrodes ◽  
Minority Carriers

Modification of several semiconductors material surfaces with H4SiW12O40•nH2O have been carried out to produce an increase in the open circuit photopotential at the semiconductor/electrolyte interface (Voc) without changing the flat-band potential. The augmentation of Voc is shown to be attributed to a decrease of the minority carriers recombination at the semiconductor/electrolyte interface along with the suppression of Fermi level pinning. The enhancement of Voc and the electrocatalytic activity of the hydrogen evolution reaction in acidic medium of the derivatized electrodes is attributed to the Fermi level unpinning. Keywords: photoelectrodes, photoelectrocatalysis, pinning, modification improvement.

Strong surface Fermi level pinning and surface state density in GaAs0.65Sb0.35 surface intrinsic-n+ structure

2009 ◽  
Vol 95 (14) ◽  
pp. 141914 ◽  
Author(s):  
K. I. Lin ◽  
H. C. Lin ◽  
J. T. Tsai ◽  
C. S. Cheng ◽  
Y. T. Lu ◽  
...  
Keyword(s):  
Fermi Level ◽  
Surface State ◽  
State Density ◽  
Surface State Density ◽  
Fermi Level Pinning ◽  
Strong Surface ◽  
Surface Fermi Level

Analysis of Fermi level pinning and surface state distribution in InAlAs heterostructures

1998 ◽  
Vol 83 (7) ◽  
pp. 3690-3695 ◽  
Author(s):  
W. Y. Chou ◽  
G. S. Chang ◽  
W. C. Hwang ◽  
J. S. Hwang
Keyword(s):  
Fermi Level ◽  
Surface State ◽  
State Distribution ◽  
Fermi Level Pinning

Fermi-level pinning and surface-state band structure of the Si(111)-(√3×√3)R30°-Ag surface

1989 ◽  
Vol 63 (19) ◽  
pp. 2092-2095 ◽  
Author(s):  
L. S. O. Johansson ◽  
E. Landemark ◽  
C. J. Karlsson ◽  
R. I. G. Uhrberg
Keyword(s):  
Band Structure ◽  
Fermi Level ◽  
Surface State ◽  
Fermi Level Pinning ◽  
State Band

Photoelectrochemical cells with n-CdTe

1982 ◽  
Vol 35 (10) ◽  
pp. 1949 ◽  
Author(s):  
AE Rakhshani ◽  
LE Lyons
Keyword(s):  
Fermi Level ◽  
Empirical Relationship ◽  
Open Circuit ◽  
Photoelectrochemical Cells ◽  
Flat Band ◽  
High State ◽  
Photovoltaic Properties ◽  
Minority Carrier Diffusion Length ◽  
Fermi Level Pinning ◽  
Redox Couples

The opto-electrical behaviour of single crystal n-type CdTe in aqueous solutions containing several redox couples Sn2+,4+, Fe2+3+ and Fe(CN)63-,4-in the dark and under irradiation is described. The minority carrier diffusion length was 0.13 μm from a combination of results on photocurrents and capacitance. The dopant concentration was 1.4 × 1017 cm-3 from Mott-Schottky plots. In the cdTe-Sn2+,4+ system the photovoltaic properties of the junction depended on the state of charge injection into the interface region. We distinguished between a 'high state' and a 'low state' where in the 'high state' both the open circuit photovoltage and the fill factor were approximately twice as large as in the 'low state'. Possibilities for a difference in the value of the built-in potential obtained from the photocurrent method and from a Mott-Schottky plot are described. The built-in potential (or the flat-band potential) was independent of the redox potential, an effect which is analogous to Fermi-level pinning. The empirical relationship between barrier height and band gap in a Fermi-level pinned junction held for our system.

scholarly journals Fermi-level pinning in methylammonium lead iodide perovskites

Nanoscale ◽  
2019 ◽  
Vol 11 (36) ◽  
pp. 16828-16836 ◽  
Author(s):  
Thibaut Gallet ◽  
David Grabowski ◽  
Thomas Kirchartz ◽  
Alex Redinger
Keyword(s):  
Fermi Level ◽  
Surface State ◽  
State Density ◽  
Scanning Tunnelling Microscopy ◽  
Lead Iodide ◽  
Surface State Density ◽  
Fermi Level Pinning ◽  
Scanning Tunnelling ◽  
Tunnelling Microscopy ◽  
Methylammonium Lead Iodide

Scanning tunnelling microscopy measurements reveal grain dependent changes in surface state density and workfunctions on polycrystalline CH3NH3PbI3 absorbers.

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