Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO2/Pt resistive random access memory structure

2011 ◽  
Vol 99 (22) ◽  
pp. 223517 ◽  
Author(s):  
T. Nagata ◽  
M. Haemori ◽  
Y. Yamashita ◽  
H. Yoshikawa ◽  
Y. Iwashita ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Structure ◽  
Spectroscopy Study ◽  
Access Memory ◽  
Forming Process ◽  
X Ray

Scanning transmission X-ray microscopy probe forin situmechanism study of graphene-oxide-based resistive random access memory

2013 ◽  
Vol 21 (1) ◽  
pp. 170-176 ◽  
Author(s):  
Hyun Woo Nho ◽  
Jong Yun Kim ◽  
Jian Wang ◽  
Hyun-Joon Shin ◽  
Sung-Yool Choi ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Ex Situ ◽  
Access Memory ◽  
Bipolar Resistive Switching ◽  
X Ray ◽  
Scanning Transmission

Here, anin situprobe for scanning transmission X-ray microscopy (STXM) has been developed and applied to the study of the bipolar resistive switching (BRS) mechanism in an Al/graphene oxide (GO)/Al resistive random access memory (RRAM) device. To performin situSTXM studies at the CK- and OK-edges, both the RRAM junctions and theI0junction were fabricated on a single Si3N4membrane to obtain local XANES spectra at these absorption edges with more delicateI0normalization. Using this probe combined with the synchrotron-based STXM technique, it was possible to observe unique chemical changes involved in the BRS process of the Al/GO/Al RRAM device. Reversible oxidation and reduction of GO induced by the externally applied bias voltages were observed at the OK-edge XANES feature located at 538.2 eV, which strongly supported the oxygen ion drift model that was recently proposed fromex situtransmission electron microscope studies.

Hard X-Ray Photoelectron Spectroscopic Study on High-k Dielectrics Based Resistive Random Access Memory

2017 ◽  
Vol 75 (32) ◽  
pp. 39-47
Author(s):  
Takahiro Nagata ◽  
Yoshiyuki Yamashita ◽  
Hideki Yoshikawa ◽  
Toyohiro Chikyow
Keyword(s):  
Spectroscopic Study ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
X Ray ◽  
High K

scholarly journals Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory

Micromachines ◽  
2020 ◽  
Vol 11 (10) ◽  
pp. 889
Author(s):  
Xiaofeng Zhao ◽  
Ping Song ◽  
Huiling Gai ◽  
Yi Li ◽  
Chunpeng Ai ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Zno Thin Films ◽  
Access Memory ◽  
X Ray ◽  
Li Doping ◽  
Resistance State

In this study, a Pt/Ag/LZO/Pt resistive random access memory (RRAM), doped by different Li-doping concentrations was designed and fabricated by using a magnetron sputtering method. To determine how the Li-doping concentration affects the crystal lattice structure in the composite ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. The resistive switching behaviors of the resulting Pt/Ag/LZO/Pt devices, with different Li-doping contents, were studied under direct current (DC) and pulse voltages. The experimental results showed that compared with the devices doped with Li-8% and -10%, the ZnO based RRAM device doped by 5% Li-doping presented stable bipolar resistive switching behaviors with DC voltage, including a low switching voltage (<1.0 V), a high endurance (>103 cycles), long retention time (>104 s), and a large resistive switching window. In addition, quick switching between a high-resistance state (HRS) and a low-resistance state (LRS) was achieved at a pulse voltage. To investigate the resistive switching mechanism of the device, a conduction model was installed based on Ag conducting filament transmission. The study of the resulting Pt/Ag/LZO/Pt devices makes it possible to further improve the performance of RRAM devices.

Sign in / Sign up

Export Citation Format

Share Document