Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2−xO3 (x=0–2) dielectrics on TiN for dynamic random access memory applications

2007 ◽  
Vol 102 (1) ◽  
pp. 014103 ◽  
Author(s):  
T. Schroeder ◽  
G. Lupina ◽  
R. Sohal ◽  
G. Lippert ◽  
Ch. Wenger ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Photoelectron Spectroscopy ◽  
Random Access ◽  
Random Access Memory ◽  
Spectroscopy Study ◽  
Access Memory ◽  
Interface Chemistry ◽  
X Ray ◽  
High K ◽  
Memory Applications

Hard X-Ray Photoelectron Spectroscopic Study on High-k Dielectrics Based Resistive Random Access Memory

2017 ◽  
Vol 75 (32) ◽  
pp. 39-47
Author(s):  
Takahiro Nagata ◽  
Yoshiyuki Yamashita ◽  
Hideki Yoshikawa ◽  
Toyohiro Chikyow
Keyword(s):  
Spectroscopic Study ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
X Ray ◽  
High K

scholarly journals Improved Intrinsic Nonlinear Characteristics of Ta2O5/Al2O3-Based Resistive Random-Access Memory for High-Density Memory Applications

Materials ◽  
2020 ◽  
Vol 13 (18) ◽  
pp. 4201 ◽  
Author(s):  
Ji-Ho Ryu ◽  
Sungjun Kim
Keyword(s):  
Photoelectron Spectroscopy ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
High Density ◽  
Tunnel Barrier ◽  
Access Memory ◽  
Nonlinear Characteristics ◽  
Nonlinear Properties ◽  
Memory Applications

The major hindrance for high-density application of two-terminal resistive random-access memory (RRAM) array design is unintentional sneak path leakage through adjacent cells. Herein, we propose a bilayer structure of Ta2O5/Al2O3-based bipolar type RRAM by evaluating the intrinsic nonlinear characteristics without integration with an additional transistor and selector device. We conducted X-ray photoelectron spectroscopy (XPS) analysis with different etching times to verify Ta2O5/Al2O3 layers deposited on the TiN bottom electrode. The optimized nonlinear properties with current suppression are obtained by varying Al2O3 thickness. The maximum nonlinearity (~71) is achieved in a Ta2O5/Al2O3 (3 nm) sample. Furthermore, we estimated the comparative read margin based on the I-V characteristics with different thicknesses of Al2O3 film for the crossbar array applications. We expect that this study about the effect of the Al2O3 tunnel barrier thickness on Ta2O5-based memristors could provide a guideline for developing a selector-less RRAM application.

Formation of Ge[sub 2]Sb[sub 2]Te[sub 5]–TiO[sub x] Nanostructures for Phase Change Random Access Memory Applications

2010 ◽  
Vol 13 (2) ◽  
pp. K8 ◽  
Author(s):  
Dongbok Lee ◽  
Sung-Soo Yim ◽  
Ho-Ki Lyeo ◽  
Min-Ho Kwon ◽  
Dongmin Kang ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications
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