scholarly journals Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory

Micromachines ◽  
2020 ◽  
Vol 11 (10) ◽  
pp. 889
Author(s):  
Xiaofeng Zhao ◽  
Ping Song ◽  
Huiling Gai ◽  
Yi Li ◽  
Chunpeng Ai ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Zno Thin Films ◽  
Access Memory ◽  
X Ray ◽  
Li Doping ◽  
Resistance State

In this study, a Pt/Ag/LZO/Pt resistive random access memory (RRAM), doped by different Li-doping concentrations was designed and fabricated by using a magnetron sputtering method. To determine how the Li-doping concentration affects the crystal lattice structure in the composite ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. The resistive switching behaviors of the resulting Pt/Ag/LZO/Pt devices, with different Li-doping contents, were studied under direct current (DC) and pulse voltages. The experimental results showed that compared with the devices doped with Li-8% and -10%, the ZnO based RRAM device doped by 5% Li-doping presented stable bipolar resistive switching behaviors with DC voltage, including a low switching voltage (<1.0 V), a high endurance (>103 cycles), long retention time (>104 s), and a large resistive switching window. In addition, quick switching between a high-resistance state (HRS) and a low-resistance state (LRS) was achieved at a pulse voltage. To investigate the resistive switching mechanism of the device, a conduction model was installed based on Ag conducting filament transmission. The study of the resulting Pt/Ag/LZO/Pt devices makes it possible to further improve the performance of RRAM devices.

scholarly journals Investigation of Conductive Mechanism of Amorphous IGO Resistive Random-Access Memory with Different Top Electrode Metal

Coatings ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 504
Author(s):  
Wei-Lun Huang ◽  
Yong-Zhe Lin ◽  
Sheng-Po Chang ◽  
Shoou-Jinn Chang
Keyword(s):  
Resistive Switching ◽  
Rf Sputtering ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Bipolar Resistive Switching ◽  
Reset Voltage ◽  
Resistance State ◽  
Conductive Mechanism

In this paper, resistive random-access memory (RRAM) with InGaO (IGO) as an active layer was fabricated by radio-frequency (RF) sputtering system and the resistive switching mechanism with the different top electrode (TE) of Pt, Ti, and Al were investigated. The Pt/IGO/Pt/Ti RRAM exhibits typical bipolar resistive switching features with an average set voltage of 1.73 V, average reset voltage of −0.60 V, average high resistance state (HRS) of 54,954.09 Ω, and the average low resistance state (LRS) of 64.97 Ω, respectively. Ti and Al were substituted for Pt as TE, and the conductive mechanism was different from TE of Pt. When Ti and Al were deposited onto the switching layer, both TE of Ti and Al will form oxidation of TiOx and AlOx because of their high activity to oxygen. The oxidation will have different effects on the forming of filaments, which may further affect the RRAM performance. The details of different mechanisms caused by different TE will be discussed. In brief, IGO is an excellent candidate for the RRAM device and with the aids of TiOx, the set voltage, and reset voltage, HRS and LRS become much more stable.

Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

2008 ◽  
Vol 93 (22) ◽  
pp. 223505 ◽  
Author(s):  
Jung Won Seo ◽  
Jae-Woo Park ◽  
Keong Su Lim ◽  
Ji-Hwan Yang ◽  
Sang Jung Kang
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Current Density ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Promising Candidate ◽  
Forward Current ◽  
Switching Characteristics

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.

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