Effect of mesh bias on the properties of the lateral conductivity of intrinsic microcrystalline silicon films deposited by low-frequency inductively coupled plasma

2011 ◽  
Vol 99 (20) ◽  
pp. 201501 ◽  
Author(s):  
W. S. Yan ◽  
S. Xu ◽  
C. C. Sern ◽  
D. Y. Wei
Keyword(s):  
Inductively Coupled Plasma ◽  
Low Frequency ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Inductively Coupled

Effect of silane/hydrogen ratio on microcrystalline silicon thin films by remote inductively coupled plasma

2013 ◽  
Vol 113 (20) ◽  
pp. 203505 ◽  
Author(s):  
Y. N. Guo ◽  
D. Y. Wei ◽  
S. Q. Xiao ◽  
S. Y. Huang ◽  
H. P. Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Microcrystalline Silicon ◽  
Inductively Coupled ◽  
Silicon Thin Films

Plasma-Assisted Nitriding in Low-Frequency Inductively Coupled Plasma Enhanced with Ferromagnetic Cores

2018 ◽  
Vol 37 (6) ◽  
pp. 545-550
Author(s):  
Mikhail Isupov ◽  
Vadim Pinaev ◽  
Daria Mul ◽  
Natalia Belousova
Keyword(s):  
Inductively Coupled Plasma ◽  
High Speed ◽  
Low Frequency ◽  
Sample Surface ◽  
Ion Energy ◽  
Inductively Coupled ◽  
Steel Aisi ◽  
Current Densities ◽  
Aisi 321 ◽  
Stainless Steel Aisi

AbstractAn experimental investigation of plasma-assisted nitriding of austenitic stainless steel AISI 321 in a low-pressure (7 Pa), low-frequency (50–100 kHz) nitrogen inductively coupled plasma enhanced with ferromagnetic cores has been performed at the temperatures of 470–625 °C, sample biases of ‒500–‒750 V, current densities on the sample surface of 1.2–3.3 mA/cm2 and nitriding times of 20 and 60 min. It is found that even the short (20 min) ion-plasma treatment results in the formation of nitrided layers with the thickness of up to 40 μm and microhardness of up to 9 GPa.The high speed of nitriding can be explained as a result of the joint action of high ion flux density and high ion energy on the sample surface.

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