Development of large-scale inductively coupled plasma source with multiple internal antennas units for synthesis of microcrystalline silicon films

2003 ◽  
Author(s):  
S. Baba ◽  
N. Yamamoto ◽  
H. Inami ◽  
A. Ebe ◽  
Y. Setsuhara ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Large Scale ◽  
Plasma Source ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Inductively Coupled

Study of Internal Linear Inductively Coupled Plasma Source for Ultra Large-Scale Flat Panel Display Processing

2009 ◽  
Vol 29 (4) ◽  
pp. 251-259 ◽  
Author(s):  
Jong Hyeuk Lim ◽  
Kyong Nam Kim ◽  
Gwang Ho Gweon ◽  
Jae Beom Park ◽  
Geun Young Yeom
Keyword(s):  
Inductively Coupled Plasma ◽  
Large Scale ◽  
Plasma Source ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Inductively Coupled

Characterization of a side-type ferrite inductively coupled plasma source for large-scale processing

2008 ◽  
Vol 17 (1) ◽  
pp. 015014 ◽  
Author(s):  
Kyeonghyo Lee ◽  
Youngkwang Lee ◽  
Sungwon Jo ◽  
Chin-Wook Chung ◽  
Valery Godyak
Keyword(s):  
Inductively Coupled Plasma ◽  
Large Scale ◽  
Plasma Source ◽  
Inductively Coupled

Pattern Writing by Implantation in a Large-Scale PSII System With Planar Inductively Coupled Plasma Source

2000 ◽  
Vol 624 ◽  
Author(s):  
Lingling Wu ◽  
Hongjun Gao ◽  
Dennis M. Manos
Keyword(s):  
Inductively Coupled Plasma ◽  
Large Scale ◽  
Lateral Diffusion ◽  
Plasma Source ◽  
Direct Writing ◽  
Large Area ◽  
Depth Profiles ◽  
Geometric Patterns ◽  
Planar Coil ◽  
Rf Antenna

ABSTRACTA large-scale plasma source immersion ion implantation (PSII) system with planar coil RFI plasma source has been used to study an inkless, deposition-free, mask-based surface conversion patterning as an alternative to direct writing techniques on large-area substrates by implantation. The apparatus has a 0.61 m ID and 0.51 m tall chamber, with a base pressure in the 10−8 Torr range, making it one of the largest PSII presently available. The system uses a 0.43 m ID planar rf antenna to produce dense plasma capable of large-area, uniform materials treatment. Metallic and semiconductor samples have been implanted through masks to produce small geometric patterns of interest for device manufacturing. Si gratings were also implanted to study application to smaller features. Samples are characterized by AES, TEM and variable-angle spectroscopic ellipsometry. Composition depth profiles obtained by AES and VASE are compared. Measured lateral and depth profiles are compared to the mask features to assess lateral diffusion, pattern transfer fidelity, and wall-effects. The paper also presents the results of MAGIC calculations of the flux and angle of ion trajectories through the boundary layer predicting the magnitude of flux as a function of 3-D location on objects in the expanding sheath

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