Effects of the defect structure on hydrogen transport in amorphous silicon

1997 ◽  
Vol 82 (6) ◽  
pp. 2862-2868 ◽  
Author(s):  
S. Acco ◽  
W. Beyer ◽  
E. E. van Faassen ◽  
W. F. van der Weg
Keyword(s):  
Amorphous Silicon ◽  
Defect Structure ◽  
Hydrogen Transport

Hydrogen transport in amorphous silicon

1992 ◽  
Vol 45 (12) ◽  
pp. 6564-6580 ◽  
Author(s):  
W. B. Jackson ◽  
C. C. Tsai
Keyword(s):  
Amorphous Silicon ◽  
Hydrogen Transport

Defect Structure and Network Disorder in Boron Doped Amorphous Silicon

1991 ◽  
Vol 219 ◽  
Author(s):  
M. B. Schubert ◽  
G. Schumm ◽  
E. Lotter ◽  
K. Eberhardt ◽  
G. H. Bauer
Keyword(s):  
Hydrogen Bonding ◽  
Fermi Level ◽  
Amorphous Silicon ◽  
Defect Structure ◽  
Boron Concentration ◽  
Hole Transport ◽  
Local Defect ◽  
Band Tail ◽  
Boron Doped ◽  
Transport Path

ABSTRACTA series of boron doped a-Si:H films have been characterized by PDS, FTIR, Raman, and SIMS in order to evaluate the effects of boron incorporation on structural properties and hydrogen bonding. Doping by B2H6 or B(CH3)3 does not significantly enhance the overall disorder of the silicon network showing up in the TO-like Raman halfwidth whereas remarkable changes in local, defect related structures are evident from PDS. An analysis of the data suggests two bands of defects in the pseudogap at low boron concentration and only one band for higher concentration. To account for Fermi level positions, shifts of the hole transport path well into the valence band tail upon doping must be invoked.

Low‐temperature modifications in the defect structure of amorphous silicon probed byin situRaman spectroscopy

1993 ◽  
Vol 63 (16) ◽  
pp. 2204-2206 ◽  
Author(s):  
A. Battaglia ◽  
S. Coffa ◽  
F. Priolo ◽  
G. Compagnini ◽  
G. A. Baratta
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Defect Structure

Thermal Equilibration and Growth of Doped Amorphous Silicon

1987 ◽  
Vol 95 ◽  
Author(s):  
J. Kakalios ◽  
R. A. Street ◽  
C. C. Tsai ◽  
R. Weisfield
Keyword(s):  
Amorphous Silicon ◽  
Defect Structure ◽  
Equilibration Time ◽  
Optimal Conditions ◽  
Rf Power ◽  
Thermal Equilibration ◽  
Equilibrium Processes ◽  
Hydrogenated Amorphous ◽  
Equilibration Rate ◽  
Deposition Conditions

AbstractThe relation between the thermal equilibration of the defect structure in n-type doped hydrogenated amorphous silicon (a-Si:H) and the deposition conditions has been investigated. When the deposition rate is increased by raising the rf power the equilibration time constants become longer, though the thermal equilibrium processes are qualitatively similar to those in samples grown under optimal conditions. Models relating the slower equilibration rate to the deposition-induced microstructure are explored.

Cathodoluminescence Microcharacterization of the Irradiation Sensitive Defect Structure of Amorphous Silicon Dioxide

1997 ◽  
Vol 3 (S2) ◽  
pp. 751-752
Author(s):  
M.A. Stevens Kalceff ◽  
M.R. Phillips ◽  
A.R. Moon
Keyword(s):  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Defect Structure ◽  
Gaussian Function ◽  
High Sensitivity ◽  
Normal Incidence ◽  
Host Lattice ◽  
Microscopy Imaging ◽  
Amorphous Silicon Dioxide ◽  
Quartz Glasses

Cathodoluminescence (CL) Microscopy (imaging) and Spectroscopy in a Scanning Electron Microscope enables high spatial resolution, high sensitivity detection of defect centers in materials. Cathodoluminescence microanalysis has been used to investigate the irradiation sensitive defect structure of Types I, II, III and IV amorphous silicon dioxide SiO2 (quartz and silica glasses). The CL experiments were performed in a JEOL JSM 35C SEM equipped with Oxford Instruments liquid N and liquid He cryogenic stages, and an Oxford Instruments MonoCL cathodoluminescence imaging and spectral analysis system. The observed CL emissions, were excited with a stationary electron beam at normal incidence and corrected for total instrument response. The corrected CL spectra were fitted with a multiparameter Gaussian function using a non linear least squares curve fitting algorithm and were identified with particular defect structures. The CL emission from high quality pure amorphous silica and quartz glasses is dominated by intrinsic processes (associated with the host lattice). See Table 1.

Trap Dominated Hydrogen Transport in Disordered Silicon

1996 ◽  
Vol 420 ◽  
Author(s):  
N. H. Nickel ◽  
W. B. Jackson ◽  
J. Walker
Keyword(s):  
Solid State ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Chemical Potential ◽  
Energy Difference ◽  
Hydrogen Transport ◽  
Hydrogen Trapping ◽  
Remote Plasma ◽  
Level Model ◽  
Two Level Model

AbstractHydrogen transport in polycrystalline silicon was investigated by deuterium diffusion experiments. D was introduced either from a remote plasma or a solid-state source. The data can be explained by a two-level model used to explain diffusion in amorphous silicon. The energy difference between transport level and deuterium chemical potential was found to be 1.3 eV. A band of shallow levels for hydrogen trapping is located about 0.6 eV below the transport level, while deep levels are about 1.7 eV below.

Electron Microscope Observations of Mechanical Metamorphism in Iron Meteorites

1970 ◽  
Vol 28 ◽  
pp. 488-489
Author(s):  
D. Faulkner ◽  
G.W. Lorimer ◽  
H.J. Axon
Keyword(s):  
Electron Microscope ◽  
Defect Structure ◽  
Shock Loading ◽  
List Type ◽  
Iron Meteorites

It is now generally accepted that meteorites are fragments produced by the collision of parent bodies of asteroidal dimensions. Optical metallographic evidence suggests that there exists a group of iron meteorites which exhibit structures similar to those observed in explosively shock loaded iron. It seems likely that shock loading of meteorites could be produced by preterrestrial impact of their parent bodies as mentioned above.We have therefore looked at the defect structure of one of these meteorites (Trenton) and compared the results with those made on a) an unshocked ‘standard’ meteorite (Canyon Diablo)b) an artificially shocked ‘standard’ meteorite (Canyon Diablo) andc) an artificially shocked specimen of pure α-iron.

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