Trap Dominated Hydrogen Transport in Disordered Silicon

1996 ◽  
Vol 420 ◽  
Author(s):  
N. H. Nickel ◽  
W. B. Jackson ◽  
J. Walker
Keyword(s):  
Solid State ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Chemical Potential ◽  
Energy Difference ◽  
Hydrogen Transport ◽  
Hydrogen Trapping ◽  
Remote Plasma ◽  
Level Model ◽  
Two Level Model

AbstractHydrogen transport in polycrystalline silicon was investigated by deuterium diffusion experiments. D was introduced either from a remote plasma or a solid-state source. The data can be explained by a two-level model used to explain diffusion in amorphous silicon. The energy difference between transport level and deuterium chemical potential was found to be 1.3 eV. A band of shallow levels for hydrogen trapping is located about 0.6 eV below the transport level, while deep levels are about 1.7 eV below.

Hydrogen Migration In Phosphorous Doped Polycrystalline Silicon

1998 ◽  
Vol 513 ◽  
Author(s):  
N. H. Nickel ◽  
I. Kaiser
Keyword(s):  
Activation Energy ◽  
Polycrystalline Silicon ◽  
Hydrogen Diffusion ◽  
Chemical Potential ◽  
Effective Diffusion ◽  
High Hydrogen ◽  
Deep Traps ◽  
Level Model ◽  
Increasing Temperature ◽  
Two Level Model

ABSTRACTHydrogen diffusion in phosphorous doped polycrystalline silicon was investigated by deuterium diffusion experiments. The presence of phosphorous enhances hydrogen diffusion. For high hydrogen concentrations the activation energy of the effective diffusion-coefficient amounts to 0.25-0.35 eV. At low hydrogen concentrations diffusion is governed by deep traps that are present in an appreciable concentration of 6×108 - 1019 cm−3. The hydrogen chemical-potential, 9H, decreases with increasing temperature at a rate of ˜ 0.002 eV/K. The data are discussed in terms of a two-level model used to describe hydrogen diffusion in amorphous and undoped polycrystalline silicon.

scholarly journals Statistical study of thermoradiative and photovoltaic cells based on a two-level model

2021 ◽  
Author(s):  
J. J. Fernández
Keyword(s):  
Statistical Study ◽  
Open Circuit Voltage ◽  
Chemical Potential ◽  
Photovoltaic Cells ◽  
Open Circuit ◽  
Energy Model ◽  
Conversion Process ◽  
Level Energy ◽  
Level Model ◽  
Two Level Model

AbstractWe use a two-level energy model to understand the conversion process that takes place in thermoradiative cells and to compare it with the conversion process that happens in photovoltaic cells. In this way, we show that in both kinds of converters the conversion process can be studied as the succession of a change in the populations of the levels that occur at constant chemical potential and a change in the value of the chemical potential of the two levels that happens while keeping their populations constant. As an application of the model, we will discuss why in thermoradiative cells the open-circuit voltage is negative while it is positive in photovoltaic cells. We also show that the expression for the open-circuit voltage is the same in both kinds of cells but that due to the values of the temperatures it is negative in thermoradiative cells and positive in photovoltaic ones.

Boron Doped Polycrystalline Silicon Produced By Step-by-Step XeCl Excimer Laser Crystallization

2006 ◽  
Vol 910 ◽  
Author(s):  
Rosari Saleh ◽  
Norbert H Nickel
Keyword(s):  
Raman Spectroscopy ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Crystallization Process ◽  
Chemical Potential ◽  
Laser Crystallization ◽  
Hydrogen Density ◽  
Boron Doped ◽  
Excimer Laser Crystallization ◽  
Hydrogen Effusion

AbstractA series of boron doped polycrystalline silicon were produced using step-by-step laser crystallization process from amorphous silicon. The influence of doping concentrations on laser- induced dehydrogenation and crystallization of amorphous silicon and on hydrogen bonding have been investigated employing Raman spectroscopy and hydrogen effusion measurements. From hydrogen effusion spectra the hydrogen chemical potential is determined as a function of hydrogen concentration, which can be related to the hydrogen density-of-states distribution. The results from hydrogen effusion are consistent with the results obtained from Raman spectroscopy.

Hydrogen transport in amorphous silicon

1992 ◽  
Vol 45 (12) ◽  
pp. 6564-6580 ◽  
Author(s):  
W. B. Jackson ◽  
C. C. Tsai
Keyword(s):  
Amorphous Silicon ◽  
Hydrogen Transport

Observations of Damage and Transport of Hydrogen in Ion Bombarded Polycrystalline Silicon

1984 ◽  
Vol 33 ◽  
Author(s):  
D. J. Sharp ◽  
J. K. G. Panitz ◽  
C. H. Seager
Keyword(s):  
Polycrystalline Silicon ◽  
Ion Beam ◽  
Columnar Structure ◽  
Hydrogen Transport ◽  
Transport Mechanisms ◽  
Sheet Resistivity ◽  
Near Surface ◽  
Resistivity Measurements ◽  
Transmission Electron ◽  
Defect Passivation

ABSTRACTA combination of chemical etching and sheet resistivity measurements showed that intense (1.4 mA/cm2 ) low energy (1400 eV) ion beam hydrogenation of polycrystalline silicon having a columnar structure can produce electrical defect passivation to depths in the order of 100 μm. Transmission electron micrographs disclose surface and near-surface features resulting from the ion beam bombardment which suggest that one of the hydrogen transport mechanisms may be defect induced.

A Center-Offset Polycrystalline-Silicon Thin-Film Transistor With ${\rm n}^{+}$ Amorphous-Silicon Contacts

2009 ◽  
Vol 30 (1) ◽  
pp. 36-38 ◽  
Author(s):  
J. H. Oh ◽  
D. H. Kang ◽  
W. H. Park ◽  
J. Jang ◽  
Y. J. Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film
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