Thermal Equilibration and Growth of Doped Amorphous Silicon

1987 ◽  
Vol 95 ◽  
Author(s):  
J. Kakalios ◽  
R. A. Street ◽  
C. C. Tsai ◽  
R. Weisfield
Keyword(s):  
Amorphous Silicon ◽  
Defect Structure ◽  
Equilibration Time ◽  
Optimal Conditions ◽  
Rf Power ◽  
Thermal Equilibration ◽  
Equilibrium Processes ◽  
Hydrogenated Amorphous ◽  
Equilibration Rate ◽  
Deposition Conditions

AbstractThe relation between the thermal equilibration of the defect structure in n-type doped hydrogenated amorphous silicon (a-Si:H) and the deposition conditions has been investigated. When the deposition rate is increased by raising the rf power the equilibration time constants become longer, though the thermal equilibrium processes are qualitatively similar to those in samples grown under optimal conditions. Models relating the slower equilibration rate to the deposition-induced microstructure are explored.

Influence of Deposition Conditions on the 1/f Noise in Hydrogenated Amorphous Silicon

1997 ◽  
Vol 467 ◽  
Author(s):  
P. W. West ◽  
D. Quicker ◽  
H. M. Dyalsingh ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Deposition Rate ◽  
Hydrogenated Amorphous Silicon ◽  
Dark Conductivity ◽  
Infrared Absorption Spectroscopy ◽  
Mobility Edge ◽  
Thermal Equilibration ◽  
The Difference ◽  
Hydrogenated Amorphous ◽  
Deposition Conditions

ABSTRACTThe electronic properties of a series of n-type doped hydrogenated amorphous silicon (a-Si:H) films grown with deposition rates ranging from 2 Å/s to 33 Å/s have been studied. Infrared absorption spectroscopy shows an increase in S1-H2 content with deposition rate, concurrent with a decreasing conductivity, increasing thermal equilibration relaxation time, and increasing disorder at the mobility edge as measured by the difference in thermopower and dark conductivity activation energies. The current 1/f noise properties become highly nonstationary, with increased variability and inapplicability of statistical analysis as the deposition rate increases.

Thermal equilibration in hydrogenated amorphous silicon-based films

1989 ◽  
Vol 114 ◽  
pp. 648-650 ◽  
Author(s):  
Tatsuo Shimizu ◽  
Xixiang Xu ◽  
Hiroyuki Sasaki ◽  
Akiharu Morimoto ◽  
Minoru Kumeda
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Thermal Equilibration ◽  
Silicon Based ◽  
Hydrogenated Amorphous

Effect of Interface and Surface on the Performance of a-Si:H TFTs

1992 ◽  
Vol 258 ◽  
Author(s):  
Jin Jang ◽  
Moon Youn Jung ◽  
Sun Sung Yoo ◽  
Hyon Kyun Song ◽  
Jung Mok Jun
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Surface Oxidation ◽  
Gate Insulator ◽  
Rf Power ◽  
Electron Accumulation ◽  
Hydrogenated Amorphous

ABSTRACTWe have studied the effects of interface and surface on the performance of hydrogenated amorphous silicon(a-Si:H) thin film transistors. The effects of rf power, the buffer layer between the gate insulator and a-Si:H, and the surface oxidation on the performance on the a-Si:H TFTs have been investigated. By introducing suitable buffer layer, we can increase the mobility up to 2.1 cm2/Vs. The surface oxidation gives rise to the electron accumulation near the surface.

Reduction of Si-H2 Bond Content in Hydrogenated Amorphous Silicon Prepared by Mercury-Sensitized Photochemical Vapor Deposition

1990 ◽  
Vol 192 ◽  
Author(s):  
N. Sakuma ◽  
H. Nozaki ◽  
T. Niiyama ◽  
H. Ito
Keyword(s):  
Light Intensity ◽  
Amorphous Silicon ◽  
Hydrogen Content ◽  
Vapor Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
The Other ◽  
Photochemical Vapor Deposition ◽  
Hydrogenated Amorphous ◽  
Deposition Conditions

ABSTRACTThe ratio of Si-H2 bonds to hydrogen content in hydrogenated amorphous silicon films, prepared by mercury-sensitized photochemical vapor deposition, depends on the deposition conditions, in particular on the distance between the substrate and the light-transparent window.The ratio is reduced from 20 % to 8 % by decreasing the distance from 30 mm to 8 mm. On the other hand, the hydrogen content remains constant at 15 at.%. Decreasing the distance has been found to be almost equivalent to increasing the light intensity, especially 254 nm-light intensity.

Radio Frequency Power Dependence of Defect Density at Hydrogenated Amorphous Silicon Interface

1991 ◽  
Vol 237 ◽  
Author(s):  
Hisanori Ihara ◽  
Takeo Sakakubo ◽  
Hidetoshi Nozaki
Keyword(s):  
Radio Frequency ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Rf Power ◽  
Interface Defect ◽  
The Difference ◽  
Silicon Interface ◽  
Hydrogenated Amorphous

ABSTRACTA hydrogenated amorphous silicon (a-Si:H) interface fabrication technology for the plasma CVD method, which can produce low interface defect density, is presented. The relation between the interface defect density and radio frequency (RF) power was investigated. As a result, the difference between the interface defect density and the bulk defect density decreased with increasing the RF power. A high RF power (25 W) a-Si:H buffer layer 5 nm thick was deposited on the interface before depositing low RF power (5 W) a-Si:H layer with a low bulk defect density. It has been found that the ideal defect density distribution, which shows the uniform distribution with the very low defect density (4.2×1014 cm) from the i/i interface to the bulk, can be accomplished by 5 nm buffer layer.

Plasma deposition of hydrogenated amorphous silicon: Effect of rf power

1989 ◽  
Vol 65 (2) ◽  
pp. 575-580 ◽  
Author(s):  
V. I. Kuznetsov ◽  
R. C. van Oort ◽  
J. W. Metselaar
Keyword(s):  
Amorphous Silicon ◽  
Plasma Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Rf Power ◽  
Hydrogenated Amorphous
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