Defect Structure and Network Disorder in Boron Doped Amorphous Silicon

1991 ◽  
Vol 219 ◽  
Author(s):  
M. B. Schubert ◽  
G. Schumm ◽  
E. Lotter ◽  
K. Eberhardt ◽  
G. H. Bauer
Keyword(s):  
Hydrogen Bonding ◽  
Fermi Level ◽  
Amorphous Silicon ◽  
Defect Structure ◽  
Boron Concentration ◽  
Hole Transport ◽  
Local Defect ◽  
Band Tail ◽  
Boron Doped ◽  
Transport Path

ABSTRACTA series of boron doped a-Si:H films have been characterized by PDS, FTIR, Raman, and SIMS in order to evaluate the effects of boron incorporation on structural properties and hydrogen bonding. Doping by B2H6 or B(CH3)3 does not significantly enhance the overall disorder of the silicon network showing up in the TO-like Raman halfwidth whereas remarkable changes in local, defect related structures are evident from PDS. An analysis of the data suggests two bands of defects in the pseudogap at low boron concentration and only one band for higher concentration. To account for Fermi level positions, shifts of the hole transport path well into the valence band tail upon doping must be invoked.

Comments on Electron and Hole Transport in the Band Tail States of Amorphous Silicon at Low Temperatures

1989 ◽  
Vol 149 ◽  
Author(s):  
M. Silver ◽  
W. E. Spear
Keyword(s):  
Amorphous Silicon ◽  
Drift Mobility ◽  
Hole Transport ◽  
Experimental Results ◽  
Exponential Tail ◽  
Band Tail ◽  
State Distribution ◽  
Temperature Drift ◽  
Model Calculations ◽  
Tail State

ABSTRACTRecent experimental results on the low temperature drift mobility in amorphous silicon are examined on the basis of the approach to hopping transport developed by Silver and Bässler. It is shown on general grounds that the main features of the experimental results cannot be explained by a purely exponential tail state distribution, but are consistent with the distribution used by Spear and Cloude (1988) in model calculations.

Defect Distribution and Defect Kinetics in Undoped and Boron-Doped A-Si:H Investigated by Modulated Photocurrents

1989 ◽  
Vol 149 ◽  
Author(s):  
G. Schumm ◽  
G. H. Bauer
Keyword(s):  
Phase Shift ◽  
Fermi Level ◽  
Fermi Energy ◽  
Strong Correlation ◽  
Defect Structure ◽  
Phase Shift Analysis ◽  
Defect Distribution ◽  
Fermi Level Position ◽  
Boron Doped ◽  
Shift Analysis

ABSTRACTGap state profiles in a-Si:H around the Fermi energy have been determined by phase shift analysis of modulated photocurrents. Measurements on different samples in various light-soaked and annealed states show a general strong correlation of the defect structure with the Fermi level position, with a minimum in the DOS at Ef and a peak above Ef. A model of the defect structure involving a peak of D+ states above Ef is outlined that accounts for the observed correlations.

scholarly journals Boron Influence on Defect Structure and Properties of Lithium Niobate Crystals

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 458
Author(s):  
Nikolay V. Sidorov ◽  
Natalia A. Teplyakova ◽  
Olga V. Makarova ◽  
Mikhail N. Palatnikov ◽  
Roman A. Titov ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Defect Structure ◽  
Photorefractive Effect ◽  
Ferroelectric Properties ◽  
High Concentration ◽  
Oh Groups ◽  
Boron Doped ◽  
Compositional Uniformity ◽  
Boron Dopant ◽  
Lithium Niobate Crystals

Defect structure of nominally pure lithium niobate crystals grown from a boron doped charge have been studied by Raman and optical spectroscopy, laser conoscopy, and photoinduced light scattering. An influence of boron dopant on optical uniformity, photoelectrical fields values, and band gap have been also studied by these methods in LiNbO3 crystals. Despite a high concentration of boron in the charge (up to 2 mol%), content in the crystal does not exceed 10−4 wt%. We have calculated that boron incorporates only into tetrahedral voids of crystal structure as a part of groups [BO3]3−, which changes O–O bonds lengths in O6 octahedra. At this oxygen–metal clusters MeO6 (Me: Li, Nb) change their polarizability. The clusters determine optically nonlinear and ferroelectric properties of a crystal. Chemical interactions in the system Li2O–Nb2O5–B2O3 have been considered. Boron, being an active element, structures lithium niobate melt, which significantly influences defect structure and physical properties of a crystal grown from such a melt. At the same time, amount of defects NbLi and concentration of OH groups in LiNbO3:B is close to that in stoichiometric crystals; photorefractive effect, optical, and compositional uniformity on the contrary is higher.

Boron-Doped Nanocrystalline Diamond Films Deposited By Using DC Arc Plasma Jet CVD

2010 ◽  
Vol 426-427 ◽  
pp. 30-34
Author(s):  
Bing Kun Xiang ◽  
Dun Wen Zuo ◽  
Xiang Feng Li ◽  
Feng Xu ◽  
M. Wang
Keyword(s):  
Diamond Film ◽  
Boron Concentration ◽  
Low Frequency ◽  
Nanocrystalline Diamond ◽  
Boron Doped ◽  
Nano Crystalline ◽  
Diamond Peak ◽  
Dc Arc ◽  
Afm Observation ◽  
Peak Value

Boron-doped micro-nanocrystalline diamond coating may be successfully prepared on Mo substrate with DC arc plasmas jet deposition device. Along with the increase of doped-boron concentration in the film, two-point resistance measurement indicates that film resistance presents exponential decrease; Raman spectrum test shows that, the characteristic peak value of diamond 1332cm-1 in the spectrum moves toward low frequency, the semi-height width of diamond peak, peak D and peak G, etc. in the spectrum is expanded, and the component of non-diamond bonds such as sp2, etc. in the film is increased; SEM and AFM observation shows that, increasing the doped-boron concentration could further subdivide the crystal grains in the film, and is beneficial for the growth of nano- or ultra-nano-crystalline diamond film; film annealing test shows that, micro-nanocrystalline diamond film with higher doped-boron concentration has better thermal stability than the micro-nanocrystalline diamond film without doped boron.

Temperature Dependence of the Decay of Optically Excited Charge Carriers in Amorphous Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
J. Whitaker ◽  
P. C. Taylor
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
State Density ◽  
Charge Carriers ◽  
Band Tail ◽  
Spin Resonance ◽  
Recombination Processes ◽  
Long Time ◽  
Tail Structure ◽  
Kinetics Of

AbstractWe report the temperature dependence of the growth and decay of the optically induced electron spin resonance (LESR) on short and long time scales (10-3 s < t < 2500 s). This range of times spans the region between previously published photoluminescence and the LESR data. In addition, we examine the steady-state density of optically excited charge carriers as a function of temperature. These measurements lead to a better understanding of the band tail structure of amorphous silicon as well as the kinetics of the excitation and recombination processes.

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