Morphology of thin film growth of gallium nitride by atmospheric pressure organometallic vapor phase epitaxy

Mapping Intimacies ◽

10.1117/12.237057 ◽

1996 ◽

Author(s):

S. M. Liao ◽

Jung-hung Wen ◽

H. F. Hung ◽

S. M. Lan

Keyword(s):

Thin Film ◽

Gallium Nitride ◽

Vapor Phase ◽

Atmospheric Pressure ◽

Film Growth ◽

Vapor Phase Epitaxy ◽

Thin Film Growth ◽

Organometallic Vapor Phase Epitaxy

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Photoluminescence characterization of GaN thin film grown by atmospheric pressure organometallic vapor phase epitaxy

Materials Science and Engineering B ◽

10.1016/s0921-5107(97)00047-0 ◽

1997 ◽

Vol 48 (3) ◽

pp. 205-210 ◽

Cited By ~ 3

Author(s):

S.M. Liao ◽

J.H. Wen ◽

W.C. Chou ◽

S.M. Lan

Keyword(s):

Thin Film ◽

Vapor Phase ◽

Atmospheric Pressure ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

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Theoretical Investigation of the Effect of Growth Orientation on Indium Incorporation Efficiency during InGaN Thin Film Growth by Metal–Organic Vapor Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.08jc02 ◽

2013 ◽

Vol 52 (8S) ◽

pp. 08JC02 ◽

Cited By ~ 14

Author(s):

Tomoe Yayama ◽

Yoshihiro Kangawa ◽

Koichi Kakimoto

Keyword(s):

Thin Film ◽

Theoretical Investigation ◽

Vapor Phase ◽

Film Growth ◽

Vapor Phase Epitaxy ◽

Thin Film Growth ◽

Growth Orientation ◽

Organic Vapor ◽

Metal Organic ◽

Incorporation Efficiency

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Strong photoluminescence from AlP/GaP disordered superlattice grown by atmospheric pressure organometallic vapor phase epitaxy using tertiarybutylphosphine

Applied Physics Letters ◽

10.1063/1.108556 ◽

1993 ◽

Vol 62 (8) ◽

pp. 888-890 ◽

Cited By ~ 27

Author(s):

Xue‐Lun Wang ◽

Akihiro Wakahara ◽

Akio Sasaki

Keyword(s):

Vapor Phase ◽

Atmospheric Pressure ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

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A low cost and single source atmospheric pressure vapor phase epitaxy of ZnS for thin film photovoltaic applications

Materials Letters ◽

10.1016/j.matlet.2018.03.096 ◽

2018 ◽

Vol 221 ◽

pp. 216-219 ◽

Cited By ~ 6

Author(s):

Y. Yusoff ◽

P. Chelvanathan ◽

N. Kamaruddin ◽

Md. Akhtaruzzaman ◽

N. Amin

Keyword(s):

Thin Film ◽

Vapor Phase ◽

Atmospheric Pressure ◽

Low Cost ◽

Vapor Phase Epitaxy ◽

Single Source ◽

Photovoltaic Applications

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X-ray studies of defects and thermal vibrations in an organometallic vapor phase epitaxy grown GaN thin film

Journal of Applied Physics ◽

10.1063/1.366038 ◽

1997 ◽

Vol 82 (5) ◽

pp. 2308-2311 ◽

Cited By ~ 7

Author(s):

X. Xiong ◽

S. C. Moss

Keyword(s):

Thin Film ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

X Ray ◽

Thermal Vibrations

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Highly p-type carbon-doped InGaAs grown by atmospheric pressure organometallic vapor-phase epitaxy

Journal of Crystal Growth ◽

10.1016/s0022-0248(98)00397-2 ◽

1998 ◽

Vol 192 (1-2) ◽

pp. 47-55 ◽

Cited By ~ 1

Author(s):

A Tandon ◽

R.M Cohen

Keyword(s):

Vapor Phase ◽

Atmospheric Pressure ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

Carbon Doped ◽

P Type

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Afterglow of Eu-related emission in Eu-doped gallium nitride grown by organometallic vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.4891232 ◽

2014 ◽

Vol 116 (4) ◽

pp. 043515 ◽

Cited By ~ 5

Author(s):

R. Wakamatsu ◽

D. Timmerman ◽

D. Lee ◽

A. Koizumi ◽

Y. Fujiwara

Keyword(s):

Gallium Nitride ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

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InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.103989 ◽

1990 ◽

Vol 57 (19) ◽

pp. 1998-2000 ◽

Cited By ~ 62

Author(s):

R. P. Schneider ◽

B. W. Wessels

Keyword(s):

Quantum Wells ◽

Vapor Phase ◽

Atmospheric Pressure ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

Single Quantum

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Chapter 7 Organometallic Vapor-Phase Epitaxy of Gallium Nitride for High-Brightness Blue Light-Emitting Diodes

Semiconductors and Semimetals ◽

10.1016/s0080-8784(08)62408-4 ◽

1997 ◽

pp. 357-390 ◽

Cited By ~ 6

Author(s):

Isamu Akasaki ◽

Hiroshi Amano

Keyword(s):

Gallium Nitride ◽

Blue Light ◽

Vapor Phase ◽

Light Emitting Diodes ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

High Brightness ◽

Light Emitting

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Structural characterization of very thin GaInAs/InP quantum wells grown by atmospheric pressure organometallic vapor‐phase epitaxy

Journal of Applied Physics ◽

10.1063/1.345193 ◽

1990 ◽

Vol 67 (1) ◽

pp. 563-566 ◽

Cited By ~ 15

Author(s):

T. Y. Wang ◽

H. R. Jen ◽

G. S. Chen ◽

G. B. Stringfellow

Keyword(s):

Quantum Wells ◽

Vapor Phase ◽

Structural Characterization ◽

Atmospheric Pressure ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

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