Amorphouslike chemical vapor deposited tungsten diffusion barrier for copper metallization and effects of nitrogen addition

1997 ◽  
Vol 82 (3) ◽  
pp. 1469-1475 ◽  
Author(s):  
Kow-Ming Chang ◽  
Ta-Hsun Yeh ◽  
I-Chung Deng ◽  
Chieh-Wen Shih
Keyword(s):  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Nitrogen Addition ◽  
Copper Metallization ◽  
Chemical Vapor Deposited

Anodic Oxidation of Nitrogen-Added Al-Based Alloys for Thin-Film Transistors

1997 ◽  
Vol 500 ◽  
Author(s):  
Toshiaki Arai ◽  
Hideo Iiyori
Keyword(s):  
Thin Film ◽  
Nitrogen Content ◽  
Electric Fields ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Nitrogen Addition ◽  
Anodized Aluminum ◽  
Leakage Currents ◽  
Current Leakage ◽  
Chemical Vapor Deposited

ABSTRACTNovel anodized films of nitrogen-added aluminum-based alloys were proposed for use in the fabrication of gate insulators for thin-film transistors, and the effect of nitrogen addition on the anodized aluminum-based alloys was investigated. Gadolinium and neodymium were employed as alternative alloy components. The film thickness, the dielectric constant, and the roughness average of the anodized films decreased as the nitrogen content increased, and the nitrogen content was required to be lower than 20 at.%. The most improved values of the breakdown electric fields of anodized aluminum-gadolinium and aluminum-neodymium alloy were 10.1 MV/cm with 6.0 at.% nitrogen content and 9.9 MV/cm with 4.0 at.% nitrogen content, respectively. The leakage currents of the anodized films under a negative bias, which could not be suppressed by high-temperature annealing, were adequately suppressed by nitrogen addition, especially in anodized aluminum-gadolinium alloy. The current leakage of the anodized aluminum-gadolinium alloy with 6.0 at.% nitrogen content became -8E-13 A at -10 V and 150°C. This value is nearly equal to that of chemical-vapor-deposited (CVD) films.

Thermal Stability of Amorphous-like WNx/W Bilayered Diffusion Barrier for Chemical Vapor Deposited-Tungsten/p+-Si Contact System

1999 ◽  
Vol 38 (Part 1, No. 3A) ◽  
pp. 1343-1351 ◽  
Author(s):  
Kow-Ming Chang ◽  
I-Chung Deng ◽  
Ta-Hsun Yeh ◽  
Kuen-Der Lain ◽  
Chao-Ming Fu
Keyword(s):  
Thermal Stability ◽  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Contact System ◽  
Chemical Vapor Deposited ◽  
Thermal Stability Of

Comparison of the diffusion barrier properties of chemical‐vapor‐deposited TaN and sputtered TaN between Cu and Si

1996 ◽  
Vol 79 (9) ◽  
pp. 6932-6938 ◽  
Author(s):  
M. H. Tsai ◽  
S. C. Sun ◽  
C. E. Tsai ◽  
S. H. Chuang ◽  
H. T. Chiu
Keyword(s):  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Barrier Properties ◽  
Chemical Vapor Deposited

Diffusion Barrier Properties of Metallorganic Chemical Vapor Deposited Tantalum Nitride Films Against Cu Metallization

1999 ◽  
Vol 146 (10) ◽  
pp. 3724-3730 ◽  
Author(s):  
Sung‐Lae Cho ◽  
Ki‐Bum Kim ◽  
Seok‐Hong Min ◽  
Hyun‐Kook Shin ◽  
Sam‐Dong Kimd
Keyword(s):  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Cu Metallization ◽  
Chemical Vapor Deposited

TEM Studies of Plasma Deposited Tungsten and Tungsten Nitride Barriers for Thermally Stable Metallization

1993 ◽  
Vol 318 ◽  
Author(s):  
Chang Woo Lee ◽  
Yong Tae Kim ◽  
Suk-Ki Min ◽  
Choochon Lee ◽  
Jeong Yong Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Compressive Stress ◽  
Lattice Constant ◽  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Tungsten Nitride ◽  
Si Substrate ◽  
Chemical Vapor Deposited ◽  
Thermal Stability Of

ABSTRACTPlasma enhanced chemical vapor deposited tungsten nitride (PECVD-W67N33) thin film has been proposed as a diffusion barrier. The resistivity and lattice constant of PECVD-W67N33 are 110-28 μΩ-cm and 4.134 Å, respectively and this film has compressive stress of 2.6 × 1010 dyne/cm2. Thermal stability of PECVD-W67N33 as a diffusion barrier reveals that the interdiffusions between Al or W and Si substrate can be prevented by N interstitial atoms in fcc-W2N grains and grain boundaries.

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