Comparison of the diffusion barrier properties of chemical‐vapor‐deposited TaN and sputtered TaN between Cu and Si

1996 ◽  
Vol 79 (9) ◽  
pp. 6932-6938 ◽  
Author(s):  
M. H. Tsai ◽  
S. C. Sun ◽  
C. E. Tsai ◽  
S. H. Chuang ◽  
H. T. Chiu
Keyword(s):  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Barrier Properties ◽  
Chemical Vapor Deposited

Diffusion Barrier Properties of Metallorganic Chemical Vapor Deposited Tantalum Nitride Films Against Cu Metallization

1999 ◽  
Vol 146 (10) ◽  
pp. 3724-3730 ◽  
Author(s):  
Sung‐Lae Cho ◽  
Ki‐Bum Kim ◽  
Seok‐Hong Min ◽  
Hyun‐Kook Shin ◽  
Sam‐Dong Kimd
Keyword(s):  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Cu Metallization ◽  
Chemical Vapor Deposited

Enhancement of Barrier Properties in Chemical Vapor Deposited TiN Employing Multi-Stacked Ti/TiN Structure

2000 ◽  
Vol 39 (Part 2, No. 2A) ◽  
pp. L82-L85 ◽  
Author(s):  
Ting-Chang Chang ◽  
Po-Tsun Liu ◽  
Ya-Liang Yang ◽  
Jung-Chih Hu ◽  
Simon M. Sze
Keyword(s):  
Chemical Vapor ◽  
Barrier Properties ◽  
Chemical Vapor Deposited

Thermal Stability of Amorphous-like WNx/W Bilayered Diffusion Barrier for Chemical Vapor Deposited-Tungsten/p+-Si Contact System

1999 ◽  
Vol 38 (Part 1, No. 3A) ◽  
pp. 1343-1351 ◽  
Author(s):  
Kow-Ming Chang ◽  
I-Chung Deng ◽  
Ta-Hsun Yeh ◽  
Kuen-Der Lain ◽  
Chao-Ming Fu
Keyword(s):  
Thermal Stability ◽  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Contact System ◽  
Chemical Vapor Deposited ◽  
Thermal Stability Of

Deposition of Copper Thin Films on Titanium Nitride Layer Prepared by Flow Modulation CVD Technology

2004 ◽  
Vol 449-452 ◽  
pp. 457-460
Author(s):  
Nam Ihn Cho ◽  
Min Chul Kim ◽  
Kyung Hwa Rim ◽  
Ho Jung Chang ◽  
Keeyoung Jun ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Diffusion Barrier ◽  
High Vacuum ◽  
Reduction Process ◽  
Chemical Vapor ◽  
Barrier Properties ◽  
Nitride Layer ◽  
Layer Growth ◽  
Flow Modulation

Copper (Cu) thin films have been deposited onto titanium nitride (TiN) layer which was previously prepared by flow modulation chemical vapor deposition (FMCVD technology. The diffusion barrier properties of the TiN layer to Cu have been studied depending upon the post-annealing and the sample preparation conditions of the TiN layer. The Cu deposition has performed by RF magnetron sputtering with 5N target in the high vacuum ambient. The FMCVD process has carried out in a single CVD chamber by switching TiCl4flow to the argon flow cyclically, which creates sequential deposition of TiN layer and chlorine reduction process. The higher flow modulation cycle and Ar purge time during the TiN layer growth have been observed to provide the better diffusion barrier property in Auger depth profile and X-ray diffraction analysis.

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