Electric-field-dependent absorption of ZnSe-based quantum wells: The transition from two-dimensional to three-dimensional behavior

1998 ◽  
Vol 58 (16) ◽  
pp. 10709-10720 ◽  
Author(s):  
D. Merbach ◽  
E. Schöll ◽  
W. Ebeling ◽  
P. Michler ◽  
J. Gutowski
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Three Dimensional ◽  
Two Dimensional ◽  
Field Dependent ◽  
Dependent Absorption

scholarly journals Influence of Electric Field Coupling Model on the Simulated Performances of a GaN Based Planar Nanodevice

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
K. Y. Xu ◽  
Z. N. Wang ◽  
Y. N. Wang ◽  
J. W. Xiong ◽  
G. Wang
Keyword(s):  
Electric Field ◽  
3D Model ◽  
Second Harmonic ◽  
Strong Electric Field ◽  
Three Dimensional ◽  
Harmonic Oscillation ◽  
Two Dimensional ◽  
Dc Bias ◽  
Simulation Results ◽  
2D Model

The performances of a two-dimensional electron gas (2DEG) based planar nanodevice are studied by a two-dimensional-three-dimensional (2D-3D) combined model and an entirely 2D model. In both models, 2DEGs are depicted by 2D ensemble Monte Carlo (EMC) method. However electric field distributions in the devices are obtained by self-consistently solving 2D and 3D Poisson equations for the 2D model and the 2D-3D model, respectively. Simulation results obtained by both models are almost the same at low bias while showing distinguished differences at high bias. The 2D model predicts larger output current and slightly higher threshold voltage of Gunn oscillations. Although the fundamental frequencies of current oscillations obtained by both models are similar, the deviation of wave shape from sinusoidal waveform obtained by the 2D model is more serious than that obtained by 2D-3D model. Moreover, results obtained by the 2D model are more sensitive both to the bias conditions and to the change of device parameters. Interestingly, a look-like second harmonic oscillation has been observed at DC bias. We contribute the origin of divergences in simulation results to the different coupling path of electric field in the two models. And the second-harmonic oscillations at DC bias should be the result of the appearance of concomitant oscillations beside the channel excited by strong electric-field effects.

Influence of electric field on interwell tunneling rate in quasi two dimensional organic quantum wells

2000 ◽  
Vol 113 (17) ◽  
pp. 7606-7612 ◽  
Author(s):  
K. J. Donovan ◽  
J. E. Elliott ◽  
I. S. Jeong ◽  
K. Scott ◽  
E. G. Wilson
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Tunneling Rate ◽  
Two Dimensional

EXCITON CONFINEMENT IN SEMICONDUCTOR MULTIPLE QUANTUM WELLS

1990 ◽  
Vol 04 (15n16) ◽  
pp. 2345-2356
Author(s):  
Y. FU ◽  
K. A. CHAO
Keyword(s):  
Wave Function ◽  
Perturbation Theory ◽  
Binding Energy ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Three Dimensional ◽  
Exciton Binding Energy ◽  
Multiple Quantum ◽  
Two Dimensional ◽  
Barrier Width

Exciton binding energy in semiconductor multiple quantum well (MQW) systems is analyzed with both the variational method and the perturbation theory. The intrinsic deficiency of the use of the two-dimensional exciton envelop wave function is clearly demonstrated. Using a GaAs/Al x Ga 1−xAs MQW as an example to calculate the exciton binding energy with a variational three-dimensional trial envelop function, we found that in many realistic samples the spatial extension of an exciton covers a region of several lattice constant dA + dB, where dA is the barrier width and dB is the well width.

Enhanced Dissociation of Hot Excitons with an Applied Electric Field under Low-Power Photoexcitation in Two-Dimensional Perovskite Quantum Wells

2019 ◽  
Vol 10 (16) ◽  
pp. 4752-4757 ◽  
Author(s):  
Vidya Kattoor ◽  
Kamlesh Awasthi ◽  
Efat Jokar ◽  
Eric Wei-Guang Diau ◽  
Nobuhiro Ohta
Keyword(s):  
Electric Field ◽  
Low Power ◽  
Quantum Wells ◽  
Applied Electric Field ◽  
Two Dimensional
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