The role of substrate quality on misfit dislocation formation in pseudomorphic high electron mobility transistor structures

1997 ◽  
Vol 81 (7) ◽  
pp. 3124-3128 ◽  
Author(s):  
M. Meshkinpour ◽  
M. S. Goorsky ◽  
B. Jenichen ◽  
D. C. Streit ◽  
T. R. Block
Keyword(s):  
Misfit Dislocation ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Substrate Quality ◽  
Dislocation Formation

Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors

2007 ◽  
Vol 37 (5) ◽  
pp. 550-553 ◽  
Author(s):  
B.S. Kang ◽  
H.T. Wang ◽  
F. Ren ◽  
M. Hlad ◽  
B.P. Gila ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Gate Oxide ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Ph Sensors ◽  
High Electron Mobility

A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias

2019 ◽  
Vol 217 (7) ◽  
pp. 1900794
Author(s):  
Nayana Remesh ◽  
Sandeep Kumar ◽  
Ivor Guiney ◽  
Colin J. Humphreys ◽  
Srinivasan Raghavan ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Substrate Bias ◽  
High Electron Mobility ◽  
Novel Technique

RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface

2017 ◽  
Vol 214 (7) ◽  
pp. 1600944 ◽  
Author(s):  
Tien Tung Luong ◽  
Franky Lumbantoruan ◽  
Yen‐Yu Chen ◽  
Yen‐Teng Ho ◽  
You‐Chen Weng ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Inversion Channel ◽  
Rf Loss ◽  
Loss Mechanisms

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer

Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

2006 ◽  
Vol 45 (No. 35) ◽  
pp. L932-L934 ◽  
Author(s):  
Li-Hsin Chu ◽  
Heng-Tung Hsu ◽  
Edward-Yi Chang ◽  
Tser-Lung Lee ◽  
Sze-Hung Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode
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