The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)

2009 ◽  
Vol 105 (3) ◽  
pp. 033701 ◽  
Author(s):  
N. Baron ◽  
Y. Cordier ◽  
S. Chenot ◽  
P. Vennéguès ◽  
O. Tottereau ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Growth Temperature ◽  
Electron Mobility ◽  
Critical Role ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Structural And Electrical Properties

Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors

2007 ◽  
Vol 37 (5) ◽  
pp. 550-553 ◽  
Author(s):  
B.S. Kang ◽  
H.T. Wang ◽  
F. Ren ◽  
M. Hlad ◽  
B.P. Gila ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Gate Oxide ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Ph Sensors ◽  
High Electron Mobility

A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias

2019 ◽  
Vol 217 (7) ◽  
pp. 1900794
Author(s):  
Nayana Remesh ◽  
Sandeep Kumar ◽  
Ivor Guiney ◽  
Colin J. Humphreys ◽  
Srinivasan Raghavan ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Substrate Bias ◽  
High Electron Mobility ◽  
Novel Technique
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