Effects of low-energy (1–1.5 kV) nitrogen-ion bombardment on sharply pointed tips: Sputtering, implantation, and metal-nitride formation

1997 ◽  
Vol 81 (2) ◽  
pp. 944-950 ◽  
Author(s):  
Y.-C. Kim ◽  
C.-J. Yu ◽  
D. N. Seidman
Keyword(s):  
Ion Bombardment ◽  
Low Energy ◽  
Metal Nitride ◽  
Nitride Formation ◽  
Nitrogen Ion

Band alignment and Schottky behaviour of InN/GaN heterostructure grown by low-temperature low-energy nitrogen ion bombardment

RSC Advances ◽  
2014 ◽  
Vol 4 (52) ◽  
pp. 27308-27314 ◽  
Author(s):  
Shibin Krishna TC ◽  
Govind Gupta
Keyword(s):  
Low Temperature ◽  
Schottky Diodes ◽  
Ion Bombardment ◽  
Band Alignment ◽  
Low Energy ◽  
Nitrogen Ions ◽  
Nitrogen Ion ◽  
Gan Heterostructure

InN/GaN heterostructure based Schottky diodes are fabricated by low energetic nitrogen ions at 300 °C.

Study of the growth of thin nitride films under low-energy nitrogen-ion bombardment

1994 ◽  
Vol 58 (4) ◽  
pp. 395-399 ◽  
Author(s):  
Zhong-Min Ren ◽  
Zhi-Feng Ying ◽  
Xia-Xing Xiong ◽  
Mao-Qi He ◽  
Fu-Ming Li ◽  
...  
Keyword(s):  
Ion Bombardment ◽  
Low Energy ◽  
Nitrogen Ion

Near-edge X-ray absorption fine-structure studies of GaN under low-energy nitrogen ion bombardment

2006 ◽  
Vol 252 (10) ◽  
pp. 3413-3416 ◽  
Author(s):  
V.A. Coleman ◽  
M. Petravić ◽  
K.-J. Kim ◽  
B. Kim ◽  
G. Li
Keyword(s):  
Fine Structure ◽  
Ion Bombardment ◽  
Low Energy ◽  
X Ray ◽  
Absorption Fine ◽  
Nitrogen Ion ◽  
X Ray Absorption

Optical absorption enhancement of CdTe nanostructures by low-energy nitrogen ion bombardment

2016 ◽  
Vol 49 (7) ◽  
pp. 075301 ◽  
Author(s):  
E Akbarnejad ◽  
M Ghoranneviss ◽  
S Mohajerzadeh ◽  
M R Hantehzadeh ◽  
E Asl Soleimani
Keyword(s):  
Optical Absorption ◽  
Ion Bombardment ◽  
Low Energy ◽  
Absorption Enhancement ◽  
Nitrogen Ion

Investigation of Low Energy Nitrogen Ion Implantation into Gold

2012 ◽  
Vol 461 ◽  
pp. 840-843 ◽  
Author(s):  
Jian Hua Yang
Keyword(s):  
Nitrogen Concentration ◽  
Experimental Studies ◽  
Low Energy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Weak Evidence ◽  
Nitride Formation ◽  
Concentration Depth Profile ◽  
Nitrogen Ion ◽  
Dynamic Computer Simulation

Noble metal nitrides have stimulated many theoretical and experimental studies on account of their abnormally high bulk modulus and intriguing electronic properties. Gold surfaces are implanted by the nitrogen ions of low energy in the present work. The surface morphology are observed by atomic force microscopy (AFM).The surface microstructure are studied with X-ray diffraction (XRD). The results of XRD and AFM show weak evidence for the formation of a nano-scale gold nitride. The nitrogen concentration depth profile in gold film has been calculated using a dynamic computer simulation to determine the possible crystal structure of the Au-N system. The mechanisms of gold nitride formation are discussed in the end.

scholarly journals Sputtering and nitridation of transition metal surfaces under low energy, steady state nitrogen ion bombardment

2020 ◽  
Vol 505 ◽  
pp. 144529 ◽  
Author(s):  
Parikshit Phadke ◽  
Jacobus M. Sturm ◽  
Robbert W.E. van de Kruijs ◽  
Fred Bijkerk
Keyword(s):  
Steady State ◽  
Transition Metal ◽  
Metal Surfaces ◽  
Ion Bombardment ◽  
Low Energy ◽  
Transition Metal Surfaces ◽  
Nitrogen Ion
Sign in / Sign up

Export Citation Format

Share Document