Impurity dependence of oxide defects in Czochralski silicon

1996 ◽  
Vol 80 (12) ◽  
pp. 6661-6665 ◽  
Author(s):  
Manabu Itsumi ◽  
Hideo Akiya ◽  
Masato Tomita ◽  
Takemi Ueki ◽  
Masataka Yamawaki
Keyword(s):  
Czochralski Silicon ◽  
Oxide Defects

Oxide defects originating from Czochralski silicon substrates

1992 ◽  
Vol 72 (6) ◽  
pp. 2185-2191 ◽  
Author(s):  
Manabu Itsumi ◽  
Osaake Nakajima ◽  
Noboru Shiono
Keyword(s):  
Silicon Substrates ◽  
Czochralski Silicon ◽  
Oxide Defects

Gate Oxide Defects in MOSLSIs and Octahedral Void Defects in Czochralski Silicon

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1228-1235 ◽  
Author(s):  
Manabu Itsumi ◽  
Takemi Ueki ◽  
Masaki Watanabe ◽  
Norikuni Yabumoto
Keyword(s):  
Gate Oxide ◽  
Czochralski Silicon ◽  
Octahedral Void ◽  
Void Defects ◽  
Oxide Defects

Octahedral Void Defects Causing Gate-Oxide Defects In Moslsis

1996 ◽  
Vol 442 ◽  
Author(s):  
Manabu Itsumi
Keyword(s):  
Integrated Circuits ◽  
Dielectric Breakdown ◽  
Side Wall ◽  
Void Defect ◽  
Czochralski Silicon ◽  
Octahedral Void ◽  
Void Defects ◽  
Oxide Defects ◽  
Experimental Findings ◽  
First Time

AbstractWe found oxide defects originating in standard Czochralski silicon and proposed the sacrificial oxidation method to eliminate these defects in about 1979. Later, N2 annealing and H2 annealing methods were proposed successively, and these three elimination methods have been successfully introduced into actual fabrication lines for highly reliable integrated circuits. However, the origin of the defect was not clarified until recently. We combined copper decoration and TEM in order to observe the origin of the oxide defects and for the first time, observed octahedral void defects systematically at the oxide defects with standard Czochralski silicon. The sizes of the defects are typically 0.1–0.2 microns. These Si-crystalline defects are the origin of oxide defects and, at the same time, may be the origin of crystal originated particles. Recently, we have observed octahedral void defects in the bulk of the standard Czochralski silicon too. Some experimental findings suggest that some impurities on the side wall of the octahedral void defect induce dielectric breakdown of the gate-oxides.

Carbon in Grown-in Defects in Czochralski Silicon and Its Influence on Gate-Oxide Defects

1999 ◽  
Vol 38 (Part 1, No. 10) ◽  
pp. 5695-5699 ◽  
Author(s):  
Takemi Ueki ◽  
Manabu Itsumi ◽  
Tadao Takeda
Keyword(s):  
Gate Oxide ◽  
Czochralski Silicon ◽  
Oxide Defects

Studies on Chemical Methods to Expose Gate/Tunnel Oxide and Identification of Gate/Tunnel Oxide Defects in Wafer Fabrication

2002 ◽  
Author(s):  
Y. N. Hua ◽  
G. B. Ang ◽  
S. Redkar ◽  
Yogaspari ◽  
Wilma Richter
Keyword(s):  
Acetic Acid ◽  
Silicon Oxide ◽  
Wafer Fabrication ◽  
Chemical Methods ◽  
Advantages And Disadvantages ◽  
Different Types ◽  
Capacitor Structure ◽  
Oxide Defects ◽  
Buffer Oxide Etchant ◽  
Etch Time

Abstract In failure analysis of wafer fabrication, currently, three different types of chemical methods including 6:6:1 (Acetic Acid/HNO3/HF), NaOH and Choline are used in removing polysilicon (poly) layer and exposing the gate/tunnel oxide underneath. However, usage is limited due to their disadvantages. For example, 6:6:1 is a relatively fast etchant, but it is difficult to control the etch time and keep the oxide layer intact. Also, while using NaOH to remove poly and expose the silicon oxide, the solution needs to be heated. It is also difficult to etch a poly layer with a WSix or a CoSix silicide using NaOH. In this paper, we will discuss these 3 etchants in terms of their advantages and disadvantages. We will then introduce a new poly etchant, called HB91. HB91 is useful for removing poly to expose the gate/tunnel oxide for identification of related defects. HB91 is actually a mixture of two chemicals namely nitric acid (HNO3) and buffer oxide etchant (BOE) in a 9:1 ratio. The experimental results show that it is highly selective in poly removal with respect to the gate/tunnel oxide and is a suitable poly etchant especially for removing polysilicon with/without WSix and CoSix in the large capacitor structure. Application results of this poly etchant (HB91) will be presented.

Impact of Correlated Generation of Oxide Defects on SILC and Breakdown Distributions

2004 ◽  
Vol 51 (8) ◽  
pp. 1281-1287 ◽  
Author(s):  
D. Ielmini ◽  
A.S. Spinelli ◽  
A.L. Lacaita ◽  
M.J. vanDuuren
Keyword(s):  
Oxide Defects

Nitrogen-doped Czochralski silicon treated in rapid thermal process

2006 ◽  
Vol 134 (2-3) ◽  
pp. 193-201 ◽  
Author(s):  
Deren Yang ◽  
Ming Li ◽  
Can Cui ◽  
Xiangyang Ma ◽  
Duanlin Que
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Nitrogen Doped ◽  
Czochralski Silicon

Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material

2005 ◽  
Vol 108-109 ◽  
pp. 11-16
Author(s):  
Timo Müller ◽  
G. Kissinger ◽  
P. Krottenthaler ◽  
C. Seuring ◽  
R. Wahlich ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Treatments ◽  
Low Oxygen ◽  
Zone Formation ◽  
Czochralski Silicon ◽  
Silicon Material ◽  
Free Material ◽  
Precipitation Enhancement

Thermal treatments to enhance precipitation like RTA, ramp anneal and argon anneal were performed on low oxygen 300 mm wafers without vacancy or interstitial agglomerates (“so called” defect-free material). Best results were achieved using high temperature argon anneal leading to a homogenous BMD and denuded zone formation. Furthermore the getter efficiency was positively tested by intentional Ni-contamination. Concepts to overcome the slip danger like improved support geometries and nitrogen codoping were also evaluated and are seen to be beneficial.

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