Impact of Correlated Generation of Oxide Defects on SILC and Breakdown Distributions

2004 ◽  
Vol 51 (8) ◽  
pp. 1281-1287 ◽  
Author(s):  
D. Ielmini ◽  
A.S. Spinelli ◽  
A.L. Lacaita ◽  
M.J. vanDuuren
Keyword(s):  
Oxide Defects

Studies on Chemical Methods to Expose Gate/Tunnel Oxide and Identification of Gate/Tunnel Oxide Defects in Wafer Fabrication

2002 ◽  
Author(s):  
Y. N. Hua ◽  
G. B. Ang ◽  
S. Redkar ◽  
Yogaspari ◽  
Wilma Richter
Keyword(s):  
Acetic Acid ◽  
Silicon Oxide ◽  
Wafer Fabrication ◽  
Chemical Methods ◽  
Advantages And Disadvantages ◽  
Different Types ◽  
Capacitor Structure ◽  
Oxide Defects ◽  
Buffer Oxide Etchant ◽  
Etch Time

Abstract In failure analysis of wafer fabrication, currently, three different types of chemical methods including 6:6:1 (Acetic Acid/HNO3/HF), NaOH and Choline are used in removing polysilicon (poly) layer and exposing the gate/tunnel oxide underneath. However, usage is limited due to their disadvantages. For example, 6:6:1 is a relatively fast etchant, but it is difficult to control the etch time and keep the oxide layer intact. Also, while using NaOH to remove poly and expose the silicon oxide, the solution needs to be heated. It is also difficult to etch a poly layer with a WSix or a CoSix silicide using NaOH. In this paper, we will discuss these 3 etchants in terms of their advantages and disadvantages. We will then introduce a new poly etchant, called HB91. HB91 is useful for removing poly to expose the gate/tunnel oxide for identification of related defects. HB91 is actually a mixture of two chemicals namely nitric acid (HNO3) and buffer oxide etchant (BOE) in a 9:1 ratio. The experimental results show that it is highly selective in poly removal with respect to the gate/tunnel oxide and is a suitable poly etchant especially for removing polysilicon with/without WSix and CoSix in the large capacitor structure. Application results of this poly etchant (HB91) will be presented.

Towards controlled cationic polymer growth from inorganic oxide defects: Directing the mechanism of polystyrene grafting from γ-irradiated silica

Polymer ◽  
2014 ◽  
Vol 55 (20) ◽  
pp. 5043-5049 ◽  
Author(s):  
Francesca D'Acunzo ◽  
Patrizia Gentili ◽  
Giancarlo Masci ◽  
Ornella Ursini
Keyword(s):  
Cationic Polymer ◽  
Inorganic Oxide ◽  
Oxide Defects ◽  
Grafting From

Octahedral-Structured Gigantic Precipitates as the Origin of Gate-Oxide Defects in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 812-817 ◽  
Author(s):  
Manabu Itsumi ◽  
Hideo Akiya ◽  
Takemi Ueki ◽  
Masato Tomita ◽  
Masataka Yamawaki
Keyword(s):  
Integrated Circuits ◽  
Metal Oxide ◽  
Large Scale ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Oxide Defects

Oxide defects generation modeling and impact on BD understanding

2011 ◽  
Author(s):  
Y. Mamy Randriamihaja ◽  
V. Huard ◽  
A. Zaka ◽  
S. Haendler ◽  
X. Federspiel ◽  
...  
Keyword(s):  
Oxide Defects

Theory of oxide defects near the Si-SiO2interface

1990 ◽  
Vol 41 (8) ◽  
pp. 5061-5066 ◽  
Author(s):  
Andrew X. Chu ◽  
W. Beall Fowler
Keyword(s):  
Oxide Defects
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