Ambipolar Diffusion Length in CuGaSe2Thin Films for Solar Cell Applications Measured by Steady-State Photocarrier Grating Technique

1993 ◽  
Vol 32 (S3) ◽  
pp. 45 ◽  
Author(s):  
R. Menner ◽  
S. Zweigart ◽  
R. Klenk ◽  
H. W. Schock
Keyword(s):  
Steady State ◽  
Solar Cell ◽  
Diffusion Length ◽  
Ambipolar Diffusion

Improved Ambipolar Diffusion Length in a-Si1-xGex:H Alloys for Multi-Junction Solar Cells

1995 ◽  
Vol 377 ◽  
Author(s):  
J. Fölsch ◽  
F. Finger ◽  
T. Kulessa ◽  
F. Siebke ◽  
W. Beyer ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Silicon Germanium ◽  
Diffusion Length ◽  
Defect Density ◽  
Chemical Vapour ◽  
Film Structure ◽  
Ambipolar Diffusion ◽  
Active Layer Thickness ◽  
Solar Cell Performance

ABSTRACTTo prepare hydrogenated amorphous silicon-germanium alloys as low gap material for multi-junction solar cells in plasma enhanced chemical vapour deposition, the well established concept of strong dilution of the process gases with hydrogen has been used. Two different regimes of alloying were found: for low Ge content (x < 0.40) we observe material with low defect density, small Urbach energy and high values of the ambipolar diffusion length. In the regime of high Ge content (x > 0.40) the defect densities and Urbach energies are high and the values of the ambipolar diffusion length low. The transition is accompanied by the appearance of a low-temperature peak in hydrogen effusion experiments indicating a void rich film structure. Material from just above and below the transition zone is used in pin solar cells leading to a much enhanced red response compared with a-Si:H cells. The differences seen in the material quality are mirrored in the solar cell properties. By carefully adjusting the active layer thickness material with low diffusion length shows also reasonable solar cell performance.

A General Analysis of Steady State Photocarrier Grating Technique for the Determination of Ambipolar Diffusion Length

1990 ◽  
Vol 192 ◽  
Author(s):  
Yuan-Min Li
Keyword(s):  
Steady State ◽  
Electric Field ◽  
Dielectric Relaxation ◽  
General Formula ◽  
Applied Electric Field ◽  
Diffusion Length ◽  
Ambipolar Diffusion ◽  
General Analysis

ABSTRACTA general photoconductivity formula is derived for the case of a semiconductor steady state photocarrier grating (SSPG)1. It is shown that, under the condition of weak applied electric field, the ambipolar diffusion length can be determined by the SSPG technique1without the lifetime-regime restriction2,3 if the lifetime of photocarriers is known. The general formula presented here is reduced to the simple lifetime-regime formula1–3 under the condition of fast dielectric relaxation.

Ambipolar diffusion length in a-Si:H(F) and a-Si,Ge:H,F measured with the steady-state photocarrier grating technique

2002 ◽  
Author(s):  
J.Z. Liu ◽  
X. Li ◽  
P. Roca i Cabarrocas ◽  
J.P. Conde ◽  
A. Maruyama ◽  
...  
Keyword(s):  
Steady State ◽  
Diffusion Length ◽  
Ambipolar Diffusion

A-Si:H Ambipolar Diffusion Length and Effective Lifetime Measured by Flying Spot Technique (FST)

1991 ◽  
Vol 219 ◽  
Author(s):  
M. Vieira ◽  
R. Martins ◽  
E. Fortunato ◽  
F. Soares ◽  
L. Guimaraes
Keyword(s):  
Laser Beam ◽  
Transient Analysis ◽  
Diffusion Length ◽  
Transport Equations ◽  
Ambipolar Diffusion ◽  
Schottky Barriers ◽  
Effective Lifetime ◽  
Asymmetrical Distribution ◽  
Flying Spot

ABSTRACTThe determination of the ambipolar diffusion length, L*, and the effective lifetime, τ*, in p/i and a-Si:H Schottky barriers (ITO/p/a-Si:H/Al-Si; Cr/a-Si:H/Cr/Ag) have been determined by Flying Spot Technique, FST. This technique consists in the transient analysis of the photocurrent/photopotential induced by a laser beam that moves perpendicularly to the structure with a constant motion ratio, at different velocities. Taking into account the competition between the diffusion/drift velocities of the excess carriers and the velocity of the flying spot, it is possible to solve the transport equations and to compute separately L* and τ*, from the asymmetrical distribution responses.

Proceedings modelling of SiC-PiN diode with adjust of ambipolar diffusion length

SPEEDAM 2010 ◽  
2010 ◽  
Author(s):  
L. H. Gonzalez ◽  
E. B. Brito ◽  
S. N. Perez ◽  
M. A. Rodriguez ◽  
J. C. Yris
Keyword(s):  
Diffusion Length ◽  
Ambipolar Diffusion ◽  
Pin Diode

Ambipolar diffusion length and photoconductivity measurements on ‘‘midgap’’ hydrogenated microcrystalline silicon

1996 ◽  
Vol 80 (9) ◽  
pp. 5111-5115 ◽  
Author(s):  
M. Goerlitzer ◽  
N. Beck ◽  
P. Torres ◽  
J. Meier ◽  
N. Wyrsch ◽  
...  
Keyword(s):  
Diffusion Length ◽  
Ambipolar Diffusion ◽  
Microcrystalline Silicon
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