Effect of Low-Level Boron Doping on Transport Properties of a-Si:H and a-SiGe:H Alloys
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ABSTRACTLarge simultaneous changes in ambipolar diffusion length and d.c. photoconductivity are observed with boron doping below 5ppm. We show that the observation can be explained successfully with a model for the doping effect, which is also consistent with earlier studies. The μτ products for both carriers as a function of doping are determined. The light intensity dependence of diffusion length and photoconductivity is also discussed.
2014 ◽
Vol 53
(5S1)
◽
pp. 05FV01
◽
2010 ◽
Vol 89
(3)
◽
pp. 181-186
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