Improved linear prediction for deep level transient spectroscopy analysis

Edward A. Ingham; James D. Scofield; Meir Pachter

doi:10.1063/1.363133

Improved linear prediction for deep level transient spectroscopy analysis

Journal of Applied Physics ◽

10.1063/1.363133 ◽

1996 ◽

Vol 80 (5) ◽

pp. 2805-2814 ◽

Cited By ~ 1

Author(s):

Edward A. Ingham ◽

James D. Scofield ◽

Meir Pachter

Keyword(s):

Deep Level Transient Spectroscopy ◽

Linear Prediction ◽

Deep Level ◽

Spectroscopy Analysis ◽

Transient Spectroscopy

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Comment on ‘‘Inverse problem for the nonexponential deep level transient spectroscopy analysis in semiconductor materials with strong disorder: Theoretical and computational aspects’’ [J. Appl. Phys.74, 291 (1993)]

Journal of Applied Physics ◽

10.1063/1.356466 ◽

1994 ◽

Vol 75 (2) ◽

pp. 1242-1242 ◽

Cited By ~ 3

Author(s):

C. Eiche ◽

D. Maier ◽

J. Weese ◽

J. Honerkamp ◽

K. W. Benz

Keyword(s):

Inverse Problem ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Semiconductor Materials ◽

Spectroscopy Analysis ◽

Strong Disorder ◽

Computational Aspects ◽

Transient Spectroscopy

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Deep level transient spectroscopy analysis of spatially dependent doping profiles

Journal of Applied Physics ◽

10.1063/1.345281 ◽

1990 ◽

Vol 67 (1) ◽

pp. 200-216 ◽

Cited By ~ 10

Author(s):

Alison Schary ◽

Charles A. Lee

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Spectroscopy Analysis ◽

Transient Spectroscopy ◽

Doping Profiles

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Deep Level Transient Spectroscopy Analysis of an Anatase Epitaxial Film Grown by Metal Organic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.l404 ◽

2001 ◽

Vol 40 (Part 2, No. 4B) ◽

pp. L404-L406 ◽

Cited By ~ 15

Author(s):

Takahira Miyagi ◽

Tomoyuki Ogawa ◽

Masayuki Kamei ◽

Yoshiki Wada ◽

Takefumi Mitsuhashi ◽

...

Keyword(s):

Vapor Deposition ◽

Deep Level Transient Spectroscopy ◽

Epitaxial Film ◽

Deep Level ◽

Chemical Vapor ◽

Organic Chemical ◽

Spectroscopy Analysis ◽

Metal Organic ◽

Transient Spectroscopy ◽

Organic Chemical Vapor Deposition

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Deep level transient spectroscopy analysis of fast ion tracks in silicon

Journal of Applied Physics ◽

10.1063/1.345702 ◽

1990 ◽

Vol 67 (3) ◽

pp. 1266-1271 ◽

Cited By ~ 58

Author(s):

A. Hallén ◽

B. U. R. Sundqvist ◽

Z. Paska ◽

B. G. Svensson ◽

M. Rosling ◽

...

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Spectroscopy Analysis ◽

Ion Tracks ◽

Transient Spectroscopy ◽

Fast Ion

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Inverse problem for the nonexponential deep level transient spectroscopy analysis in semiconductor materials with strong disorder: Theoretical and computational aspects

Journal of Applied Physics ◽

10.1063/1.354105 ◽

1993 ◽

Vol 74 (1) ◽

pp. 291-295 ◽

Cited By ~ 14

Author(s):

D. A. Batovski ◽

Ch. M. Hardalov

Keyword(s):

Inverse Problem ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Semiconductor Materials ◽

Spectroscopy Analysis ◽

Strong Disorder ◽

Computational Aspects ◽

Transient Spectroscopy

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A deep level transient spectroscopy analysis of electron and hole traps in bulk‐grown GaAs

Journal of Applied Physics ◽

10.1063/1.336854 ◽

1986 ◽

Vol 59 (1) ◽

pp. 158-163 ◽

Cited By ~ 62

Author(s):

F. D. Auret ◽

A. W. R. Leitch ◽

J. S. Vermaak

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Spectroscopy Analysis ◽

Transient Spectroscopy ◽

Electron And Hole Traps

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New method of deep level transient spectroscopy analysis: a five emission rate method

Materials Science and Engineering B ◽

10.1016/0921-5107(93)90430-u ◽

1993 ◽

Vol 20 (1-2) ◽

pp. 214-220 ◽

Cited By ~ 2

Author(s):

E. Losson ◽

B. Lepley

Keyword(s):

Deep Level Transient Spectroscopy ◽

Emission Rate ◽

Deep Level ◽

New Method ◽

Spectroscopy Analysis ◽

Rate Method ◽

Transient Spectroscopy

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Deep Level Transient Spectroscopy Analysis of 10 MeV Proton and 1 MeV Electron Irradiation-Induced Defects in p-InGaP and InGaP-based Solar Cells

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.1241 ◽

2002 ◽

Vol 41 (Part 1, No. 3A) ◽

pp. 1241-1246 ◽

Cited By ~ 18

Author(s):

Aurangzeb Khan ◽

Masafumi Yamaguchi ◽

Nothaj Dharmaso ◽

Jacques Bourgoin ◽

Koshi Ando ◽

...

Keyword(s):

Solar Cells ◽

Electron Irradiation ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Spectroscopy Analysis ◽

Transient Spectroscopy ◽

Induced Defects ◽

Irradiation Induced Defects

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Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

Applied Physics Letters ◽

10.1063/1.3326079 ◽

2010 ◽

Vol 96 (7) ◽

pp. 072107 ◽

Cited By ~ 68

Author(s):

W. Chikhaoui ◽

J.-M. Bluet ◽

M.-A. Poisson ◽

N. Sarazin ◽

C. Dua ◽

...

Keyword(s):

Electron Mobility ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage ◽

Spectroscopy Analysis ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Transient Spectroscopy

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Deep-level transient spectroscopy analysis of proton-irradiated n+/p InGaP solar cells

Physica B Condensed Matter ◽

10.1016/s0921-4526(01)00935-8 ◽

2001 ◽

Vol 308-310 ◽

pp. 1181-1184 ◽

Cited By ~ 5

Author(s):

N. Dharmarasu ◽

M. Yamaguchi ◽

A. Khan ◽

T. Takamoto ◽

T. Ohshima ◽

...

Keyword(s):

Solar Cells ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Spectroscopy Analysis ◽

Transient Spectroscopy

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