A deep level transient spectroscopy analysis of electron and hole traps in bulk‐grown GaAs

1986 ◽  
Vol 59 (1) ◽  
pp. 158-163 ◽  
Author(s):  
F. D. Auret ◽  
A. W. R. Leitch ◽  
J. S. Vermaak
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Analysis ◽  
Transient Spectroscopy ◽  
Electron And Hole Traps

scholarly journals Deep levels in n-type Schottky and p+-n homojunction GaN diodes

2000 ◽  
Vol 5 (S1) ◽  
pp. 922-928
Author(s):  
A. Hierro ◽  
D. Kwon ◽  
S. A. Ringel ◽  
M. Hansen ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Schottky Diodes ◽  
Yellow Luminescence ◽  
Arrhenius Behavior ◽  
Electron Level ◽  
Transient Spectroscopy ◽  
Electron And Hole Traps

The deep level spectra in both p+-n homojunction and n-type Schottky GaN diodes are studied by deep level transient spectroscopy (DLTS) in order to compare the role of the junction configuration on the defects found within the n-GaN layer. Both majority and minority carrier DLTS measurements are performed on the diodes allowing the observation of both electron and hole traps in n-GaN. An electron level at Ec−Et=0.58 and 0.62 V is observed in the p+-n and Schottky diodes, respectively, with a concentration of ∼3−4×1014 cm−3 and a capture cross section of ∼1−5×10−15 cm2. The similar Arrhenius behavior indicates that both emissions are related to the same defect. The shift in activation energy is correlated to the electric field enhanced-emission in the p+-n diode, where the junction barrier is much larger. The p+-n diode configuration allows the observation of a hole trap at Et−Ev=0.87 eV in the n-GaN which is very likely related to the yellow luminescence band.

Improved linear prediction for deep level transient spectroscopy analysis

1996 ◽  
Vol 80 (5) ◽  
pp. 2805-2814 ◽  
Author(s):  
Edward A. Ingham ◽  
James D. Scofield ◽  
Meir Pachter
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Linear Prediction ◽  
Deep Level ◽  
Spectroscopy Analysis ◽  
Transient Spectroscopy

Deep level transient spectroscopy analysis of fast ion tracks in silicon

1990 ◽  
Vol 67 (3) ◽  
pp. 1266-1271 ◽  
Author(s):  
A. Hallén ◽  
B. U. R. Sundqvist ◽  
Z. Paska ◽  
B. G. Svensson ◽  
M. Rosling ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Analysis ◽  
Ion Tracks ◽  
Transient Spectroscopy ◽  
Fast Ion

Defects Induced by Reactive Ion Etching in Ge Substrate

2014 ◽  
Vol 896 ◽  
pp. 241-244
Author(s):  
Kusumandari ◽  
Noriyuki Taoka ◽  
Wakana Takeuchi ◽  
Mitsuo Sakashita ◽  
Osamu Nakatsuka ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Defect Formation ◽  
Deep Level ◽  
Reactive Ion Etching ◽  
The Other ◽  
Ion Etching ◽  
Ar Plasma ◽  
Transient Spectroscopy ◽  
Electron And Hole Traps ◽  
Dlts Spectra

We investigated impacts of the Ar and CF4　plasma during reactive ion etching (RIE) on defect formation in the Ge substrates using the deep-level-transient-spectroscopy (DLTS) technique. It was found that the Ar plasma causes the roughening of the Ge surface. Moreover, the Ar plasma induces a defect with an energy level of 0.31 eV from the conduction band minimum in the Ge substrate, confirming by DLTS spectra. On the other hand, the CF4plasma hardly induces the surface roughness of Ge. However, the CF4plasma induces many kinds of electron and hole traps. It should be noted that the defects associated with Sb and interstitials are widely distributed to around 3-µm.

High resolution Laplace deep level transient spectroscopy studies of electron and hole traps in n-type GaN

2008 ◽  
Vol 5 (6) ◽  
pp. 1482-1484 ◽  
Author(s):  
D. Emiroglu ◽  
J. Evans-Freeman ◽  
M. J. Kappers ◽  
C. McAleese ◽  
C. J. Humphreys
Keyword(s):  
High Resolution ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies ◽  
Electron And Hole Traps
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