Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

W. Chikhaoui; J.-M. Bluet; M.-A. Poisson; N. Sarazin; C. Dua; C. Bru-Chevallier

doi:10.1063/1.3326079

Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

Applied Physics Letters ◽

10.1063/1.3326079 ◽

2010 ◽

Vol 96 (7) ◽

pp. 072107 ◽

Cited By ~ 68

Author(s):

W. Chikhaoui ◽

J.-M. Bluet ◽

M.-A. Poisson ◽

N. Sarazin ◽

C. Dua ◽

...

Keyword(s):

Electron Mobility ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage ◽

Spectroscopy Analysis ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Transient Spectroscopy

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Anomaly and defects characterization by I-V and current deep level transient spectroscopy of Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors

Journal of Applied Physics ◽

10.1063/1.3702458 ◽

2012 ◽

Vol 111 (7) ◽

pp. 073713 ◽

Cited By ~ 10

Author(s):

Salah Saadaoui ◽

Mohamed Mongi Ben Salem ◽

Malek Gassoumi ◽

Hassen Maaref ◽

Christophe Gaquière

Keyword(s):

Electron Mobility ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Transient Spectroscopy

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A deep‐level transient spectroscopy study of high electron mobility transistors subjected to lifetime stress tests

Journal of Applied Physics ◽

10.1063/1.343667 ◽

1989 ◽

Vol 66 (11) ◽

pp. 5613-5617 ◽

Cited By ~ 9

Author(s):

R. Magno ◽

R. Shelby ◽

W. T. Anderson

Keyword(s):

Electron Mobility ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

High Electron Mobility Transistors ◽

High Electron ◽

Spectroscopy Study ◽

Stress Tests ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Transient Spectroscopy

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Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

Applied Physics Letters ◽

10.1063/1.4813862 ◽

2013 ◽

Vol 103 (3) ◽

pp. 033509 ◽

Cited By ~ 45

Author(s):

A. Sasikumar ◽

A. R. Arehart ◽

S. Martin-Horcajo ◽

M. F. Romero ◽

Y. Pei ◽

...

Keyword(s):

Electron Mobility ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Drain Current ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Transient Spectroscopy

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Deep level transient spectroscopy of n-AlGaAs/GaAs high electron mobility transistors

Electronics Letters ◽

10.1049/el:19900108 ◽

1990 ◽

Vol 26 (3) ◽

pp. 159 ◽

Cited By ~ 3

Author(s):

J. Goostray ◽

H. Thomas ◽

D.V. Morgan ◽

E. Kohn ◽

A. Christou ◽

...

Keyword(s):

Electron Mobility ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Transient Spectroscopy

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Capacitance and drain current deep level transient spectroscopy measurements on molecular beam epitaxy grown GaAs/ln0·25Ga0·75As/Al0·3Ga0·7As high electron mobility transistors

Materials Science and Technology ◽

10.1179/mst.1995.11.10.1079 ◽

1995 ◽

Vol 11 (10) ◽

pp. 1079-1082 ◽

Cited By ~ 1

Author(s):

Y. Haddab ◽

M. A. Py ◽

J.-M. Bonard ◽

H.-J. Bühlmann ◽

M. lIegems

Keyword(s):

Molecular Beam Epitaxy ◽

Deep Level Transient Spectroscopy ◽

Molecular Beam ◽

Deep Level ◽

Drain Current ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Transient Spectroscopy

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Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep Level Transient Spectroscopy

physica status solidi (a) ◽

10.1002/pssa.202100227 ◽

2021 ◽

Author(s):

Po-Chun (Brent) Hsu ◽

Eddy Simoen ◽

Hu Liang ◽

Brice De Jaeger ◽

Benoit Bakeroot ◽

...

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Low Frequency ◽

High Electron Mobility Transistors ◽

Frequency Noise ◽

Defect Characterization ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Transient Spectroscopy

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Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

Semiconductors ◽

10.1134/s1063782613070087 ◽

2013 ◽

Vol 47 (7) ◽

pp. 1008-1012 ◽

Cited By ~ 2

Author(s):

Malek Gassoumi ◽

Hana Mosbahi ◽

Mohamed Ali Zaidi ◽

Christophe Gaquiere ◽

Hassen Maaref

Keyword(s):

Deep Level Transient Spectroscopy ◽

Surface Passivation ◽

Deep Level ◽

High Electron Mobility Transistors ◽

High Electron ◽

Si Substrate ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Transient Spectroscopy ◽

Effect Of Surface

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Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

Applied Physics Letters ◽

10.1063/5.0078367 ◽

2021 ◽

Vol 119 (23) ◽

pp. 233502

Author(s):

Yixu Yao ◽

Qimeng Jiang ◽

Sen Huang ◽

Xinhua Wang ◽

Xiaorong Luo ◽

...

Keyword(s):

Threshold Voltage ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

High Electron Mobility Transistors ◽

Interface State ◽

High Electron ◽

High Electron Mobility ◽

Voltage Instability ◽

Electron Mobility Transistors ◽

Transient Spectroscopy

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Single-Event Damage-Induced Gate-Leakage Mechanisms in AlGaN/GaN High-Electron-Mobility Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3075667 ◽

2021 ◽

pp. 1-6

Author(s):

Shaozhong Yue ◽

Zhangang Zhang ◽

Ziwen Chen ◽

Xuefeng Zheng ◽

Lei Wang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Single Event ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.1953873 ◽

2005 ◽

Vol 86 (25) ◽

pp. 253511 ◽

Cited By ~ 21

Author(s):

P. Kordoš ◽

J. Bernát ◽

M. Marso ◽

H. Lüth ◽

F. Rampazzo ◽

...

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

Drain Current ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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