Interfaces in Si/Ge atomic layer superlattices on (001)Si: Effect of growth temperature and wafer misorientation

1996 ◽  
Vol 80 (3) ◽  
pp. 1450-1459 ◽  
Author(s):  
J.‐M. Baribeau ◽  
D. J. Lockwood ◽  
R. W. G. Syme
Keyword(s):  
Growth Temperature ◽  
Atomic Layer ◽  
Si Effect

Effect of Catalyst Layer Density and Growth Temperature in Rapid Atomic Layer Deposition of Silica Using Tris(tert-pentoxy)silanol

2011 ◽  
Vol 3 (5) ◽  
pp. 1633-1639 ◽  
Author(s):  
Seok-Jun Won ◽  
Joon Rae Kim ◽  
Sungin Suh ◽  
Nae-In Lee ◽  
Cheol Seong Hwang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Growth Temperature ◽  
Catalyst Layer ◽  
Atomic Layer ◽  
Layer Density ◽  
Layer Deposition

Effect of growth temperature and postmetallization annealing on the interface and dielectric quality of atomic layer deposited HfO2 on p and n silicon

2004 ◽  
Vol 96 (3) ◽  
pp. 1365-1372 ◽  
Author(s):  
S. Dueñas ◽  
H. Castán ◽  
H. García ◽  
J. Barbolla ◽  
K. Kukli ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Atomic Layer
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