Effect of Catalyst Layer Density and Growth Temperature in Rapid Atomic Layer Deposition of Silica Using Tris(tert-pentoxy)silanol

2011 ◽  
Vol 3 (5) ◽  
pp. 1633-1639 ◽  
Author(s):  
Seok-Jun Won ◽  
Joon Rae Kim ◽  
Sungin Suh ◽  
Nae-In Lee ◽  
Cheol Seong Hwang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Growth Temperature ◽  
Catalyst Layer ◽  
Atomic Layer ◽  
Layer Density ◽  
Layer Deposition

scholarly journals Scalable nanoporous carbon films allow line-of-sight 3D atomic layer deposition of Pt: towards a new generation catalyst layer for PEM fuel cells

2021 ◽  
Author(s):  
Marwa Atwa ◽  
Xiaoan Li ◽  
Zhaoxuan Wang ◽  
Samuel Dull ◽  
Shicheng Xu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Pt Nanoparticles ◽  
Catalyst Layer ◽  
Atomic Layer ◽  
Pem Fuel Cells ◽  
Nanoporous Carbon ◽  
Carbon Films ◽  
Layer Deposition ◽  
Binder Free ◽  
New Generation

A self-supported, binder-free and scalable nanoporous carbon scaffold serves as an excellent host for the efficient and uniform atomic layer deposition of Pt nanoparticles, showing exemplary performance as a cathode catalyst layer in a PEM fuel cell.

scholarly journals Влияние ростовой температуры на пассивирующие свойства пленок Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-, выращенных методом атомно-слоевого осаждения на поверхности CdHgTe

2020 ◽  
Vol 46 (15) ◽  
pp. 14
Author(s):  
Д.В. Горшков ◽  
Г.Ю. Сидоров ◽  
И.В. Сабинина ◽  
Ю.Г. Сидоров ◽  
Д.В. Марин ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Growth Temperature ◽  
Atomic Layer ◽  
Interface Properties ◽  
Optimum Growth ◽  
Al2o3 Coating ◽  
Optimum Growth Temperature ◽  
Layer Deposition ◽  
Capacitance Voltage ◽  
Mis Structures

The electrophysical interface properties of the passivating Al2O3 coating grown by the method of plasma-induced atomic layer deposition at various temperatures on MBE p-CdHgTe (x = 0.22) was experimentally studied by measuring the capacitance-voltage characteristics of MIS structures. It was found that, at a temperature of Al2O3 growth of 200 °С in MCT, the concentration of acceptors increases due to dissociation. At a temperature of 80 °С, the spread in the capacitance of the dielectric and the built-in charge increases. The optimum growth temperature of the passivating Al2O3coating on CdHgTe lies in the range of 120-160 °С.

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