Synthesis and electrical characterization of boron‐doped thin diamond films

1992 ◽  
Vol 61 (15) ◽  
pp. 1832-1834 ◽  
Author(s):  
A. Masood ◽  
M. Aslam ◽  
M. A Tamor ◽  
T. J. Potter
Keyword(s):  
Diamond Films ◽  
Electrical Characterization ◽  
Boron Doped

Optical and electrical characterization of boron-doped diamond films

1995 ◽  
Vol 4 (5-6) ◽  
pp. 678-683 ◽  
Author(s):  
R. Locher ◽  
J. Wagner ◽  
F. Fuchs ◽  
M. Maier ◽  
P. Gonon ◽  
...  
Keyword(s):  
Diamond Films ◽  
Electrical Characterization ◽  
Boron Doped Diamond ◽  
Boron Doped

Electrical characterization of Al/Si ohmic contacts to heavily boron doped polycrystalline diamond films

1996 ◽  
Vol 79 (5) ◽  
pp. 2535-2541 ◽  
Author(s):  
M. Werner ◽  
C. Johnston ◽  
P. R. Chalker ◽  
S. Romani ◽  
I. M. Buckley‐Golder
Keyword(s):  
Ohmic Contacts ◽  
Diamond Films ◽  
Electrical Characterization ◽  
Polycrystalline Diamond ◽  
Boron Doped

Preparation and Electrochemical Characterization of DNA-modified Nanocrystalline Diamond Films

2002 ◽  
Vol 737 ◽  
Author(s):  
Wensha Yang ◽  
Orlando Auciello ◽  
James E. Butler ◽  
Wei Cai ◽  
John A. Carlisle ◽  
...  
Keyword(s):  
Dna Sequences ◽  
Dna Hybridization ◽  
Diamond Films ◽  
Nanocrystalline Diamond ◽  
Dna Oligonucleotides ◽  
Quantitative Studies ◽  
Boron Doped ◽  
Complementary Sequences ◽  
Nanocrystalline Diamond Films

ABSTRACTNanocrystalline diamond thin films of sub-micron thickness have been covalently modified with DNA oligonucleotides. Quantitative studies of hybridization of surface-bound oligonucleotides with fluorescently tagged complementary and non-complementary oligonucleotides were performed. The results show no detectable nonspecific adsorption, with extremely good selectivity between matched and mismatched sequences. Impedance spectroscopy measurements were made of DNA-modified boron-doped nanocrystalline diamond films. The results show that exposure to non-complementary sequences induce only small changes in impedance, while complementary DNA sequences produce a pronounced decrease in impedance. The combination of high stability, selectivity, and the ability to directly detect DNA hybridization via electrical means suggest that diamond may be an ideal substrate for continuously-monitoring biological sensors.

Characterization of undoped and boron-doped polycrystalline diamond films synthesized by hot-filament chemical vapor deposition using methanol

1994 ◽  
Vol 3 (4-6) ◽  
pp. 618-622 ◽  
Author(s):  
Takashi Sugino ◽  
Kiyoshi Karasutani ◽  
Fumihiro Mano ◽  
Hiroya Kataoka ◽  
Junji Shirafuji ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Boron Doped ◽  
Hot Filament

OSL and TL dosimeter characterization of boron doped CVD diamond films

2005 ◽  
Vol 27 (7) ◽  
pp. 1231-1234 ◽  
Author(s):  
J.A.N. Gonçalves ◽  
G.M. Sandonato ◽  
R. Meléndrez ◽  
V. Chernov ◽  
M. Pedroza-Montero ◽  
...  
Keyword(s):  
Diamond Films ◽  
Cvd Diamond ◽  
Boron Doped

Evaluation Of 2.0 nm Grown and Deposited Dielectrics in 0.1 μm PMOSFETs

1998 ◽  
Vol 525 ◽  
Author(s):  
A. Srivastava ◽  
H. H. Heinisch ◽  
E. Vogel ◽  
C. Parker ◽  
C. M. Osburn ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Electrical Characterization ◽  
Deposition Process ◽  
Gate Oxides ◽  
Boron Doped ◽  
Excellent Control ◽  
Lower Temperature ◽  
Boron Penetration

ABSTRACTThe quality and composition of ultra-thin 2.0 nm gate dielectrics advocated for the 0.1 μm technology regime is expected to significantly impact gate tunneling currents, P+-gate dopant depletion effects and boron penetration into the substrate in PMOSFETs. This paper presents a comparative assessment of alternative grown and deposited gate dielectrics in sub-micron fabricated devices. High quality rapid-thermal CVD oxides and oxynitrides are examined as alternatives to conventional furnace grown gate oxides. An alternative gate process using in-situ boron doped and RTCVD deposited poly-Si is explored. PMOSFETs with Leff down to 0.06 μm were fabricated using a 0.1 μm technology. Electrical characterization of fabricated devices revealed excellent control of gate-boron depletion with the in-situ gate deposition process in all devices. Boron penetration of 2.0 nm gate oxides was effectively controlled by the use of a lower temperature RTA process. The direct tunneling leakage, although significant at these thicknesses, was less than 1 mA/cm2 at Vd = −1.2 V for all dielectrics. MOSFETs with comparable drive currents and excellent junction and off-state leakages were obtained with each dielectric.

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