Detection and comparison of localized states produced in poly‐Si/ultra‐thin oxide/silicon, structures by plasma exposure or plasma charging during reactive ion etching

1996 ◽  
Vol 79 (4) ◽  
pp. 2091-2096 ◽  
Author(s):  
Stephen J. Fonash ◽  
Milagros Ozaita ◽  
Osama O. Awadelkarim ◽  
Fred Preuninger ◽  
Y. D. Chan
Keyword(s):  
Reactive Ion Etching ◽  
Localized States ◽  
Plasma Exposure ◽  
Ion Etching ◽  
Silicon Structures ◽  
Thin Oxide

50−nm silicon structures fabricated with trilevel electron beam resist and reactive‐ion etching

1981 ◽  
Vol 39 (3) ◽  
pp. 268-270 ◽  
Author(s):  
L. D. Jackel ◽  
R. E. Howard ◽  
E. L. Hu ◽  
D. M. Tennant ◽  
P. Grabbe
Keyword(s):  
Electron Beam ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Silicon Structures

Profile Simulation of Reactive Ion Etching for Silicon Tip-on-Post and Bottle-Neck Structures in Fed Applications

1997 ◽  
Vol 471 ◽  
Author(s):  
A. R. Zoulkarneev ◽  
J. M. Kim ◽  
J. P. Hong ◽  
J. H. Choi ◽  
V. V. Michine
Keyword(s):  
Angular Distribution ◽  
Field Emission ◽  
Analytical Study ◽  
Reactive Ion Etching ◽  
Ion Flux ◽  
Experimental Results ◽  
Ion Etching ◽  
Temporal Profile ◽  
Silicon Structures ◽  
Bottle Neck

ABSTRACTThis articles describes an investigation of the reactive ion etching of tip-on-post and bottle-neck silicon structures used for fabrication field emission devices. The analytical study for the angular distribution of incident etching ions is presented by the simulation with temporal profile evolution. The surface simulations are compared with experimental results. This comparison shows that numerical expression for the angular distribution could be applied for incident ion flux in case tip-on-post and bottle-neck silicon structures.

Damage Introduced by Chdamage Introduced by CH4/H2 Reactive Ion Etching in Pseudomorphic AlGaAs/InGaAs MODFETs

1991 ◽  
Vol 240 ◽  
Author(s):  
R. Pereira ◽  
M. Van Hove ◽  
W. De Raedt ◽  
C. Van Hoof ◽  
G. Borghs ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Reactive Ion Etching ◽  
Electrical Characteristics ◽  
Plasma Exposure ◽  
Ion Etching ◽  
Hall Measurements ◽  
Low Temperature Photoluminescence

ABSTRACTThe damage introduced by CH4/H2 reactive ion etching (RIE) and its recovery after thermal annealing has been investigated by Hall measurements and low temperature photoluminescence (PL) on pseudomorphic AlGaAs/InGaAs modulation doped structures. After plasma exposure, the PL intensity has significantly decreased and shifted in energy. In order to study the recovery of the damage introduced by the plasma, thermal annealing was done at temperatures between 350 and 500°C. We observed that the luminescence emission is totally recovered after annealing at 450°C. Hall measurements at room temperature (RT) and at 77K showed that the electrical characteristics of these structures can be restored only after thermal annealing at 500°C.The optimised etching conditions have been applied in a fabrication process for submicron dry gate recessed pseudomorphic delta-doped AlGaAs/InGaAs modulation doped field effect transistors (MODFETs). For a 0.25 mm gatelength device the maximum DC transconductance value was as high as 680 mS/mm. The same value was extracted from measurements at 15 GHz.

Structural Changes in a Resist Resulting from Plasma Exposure during the Reactive Ion Etching Process

2001 ◽  
Vol 40 (Part 1, No. 2A) ◽  
pp. 798-802 ◽  
Author(s):  
Ichiro Tohno ◽  
Makoto Saito ◽  
Kayoko Omiya ◽  
Yoshinori Kataoka
Keyword(s):  
Structural Changes ◽  
Reactive Ion Etching ◽  
Etching Process ◽  
Plasma Exposure ◽  
Ion Etching
Sign in / Sign up

Export Citation Format

Share Document