Erbium‐doped silicon films grown by plasma‐enhanced chemical‐vapor deposition

J. L. Rogers; P. S. Andry; W. J. Varhue; E. Adams; M. Lavoie; P. B. Klein

doi:10.1063/1.360571

Erbium‐doped silicon films grown by plasma‐enhanced chemical‐vapor deposition

Journal of Applied Physics ◽

10.1063/1.360571 ◽

1995 ◽

Vol 78 (10) ◽

pp. 6241-6248 ◽

Cited By ~ 19

Author(s):

J. L. Rogers ◽

P. S. Andry ◽

W. J. Varhue ◽

E. Adams ◽

M. Lavoie ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Silicon Films ◽

Erbium Doped ◽

Doped Silicon

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Pressure dependence ofinsituboron‐doped silicon films prepared by low‐pressure chemical vapor deposition. I. Microstructure

Journal of Applied Physics ◽

10.1063/1.343794 ◽

1989 ◽

Vol 66 (10) ◽

pp. 4806-4811 ◽

Cited By ~ 14

Author(s):

P. Joubert ◽

M. Sarret ◽

L. Haji ◽

L. Hamedi ◽

B. Loisel

Keyword(s):

Chemical Vapor Deposition ◽

Pressure Dependence ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Doped Silicon ◽

Pressure Chemical

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Deposition and electrical properties ofinsituphosphorus‐doped silicon films formed by low‐pressure chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.338036 ◽

1987 ◽

Vol 61 (5) ◽

pp. 1898-1904 ◽

Cited By ~ 25

Author(s):

Arthur J. Learn ◽

Derrick W. Foster

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Doped Silicon ◽

Pressure Chemical

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Pressure dependence ofinsituboron‐doped silicon films prepared by low‐pressure chemical vapor deposition. II. Resistivity

Journal of Applied Physics ◽

10.1063/1.343795 ◽

1989 ◽

Vol 66 (10) ◽

pp. 4812-4817 ◽

Cited By ~ 7

Author(s):

L. Haji ◽

L. Hamedi ◽

B. Loisel ◽

M. Gauneau ◽

P. Joubert ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Pressure Dependence ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Doped Silicon ◽

Pressure Chemical

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Preparation and properties of boron-doped silicon films grown at low temperature by chemical vapor deposition

Thin Solid Films ◽

10.1016/0040-6090(73)90232-0 ◽

1973 ◽

Vol 18 (1) ◽

pp. 145-155 ◽

Cited By ~ 7

Author(s):

Lou H. Hall ◽

K.M. Koliwad ◽

L.N. Swink

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Silicon Films ◽

Boron Doped ◽

Doped Silicon

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Low Temperature Chemical Vapor Deposition of Boron Doped Silicon Films

Journal of The Electrochemical Society ◽

10.1149/1.2403279 ◽

1973 ◽

Vol 120 (10) ◽

pp. 1438 ◽

Cited By ~ 24

Author(s):

Lou H. Hall ◽

K. M. Koliwad

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Silicon Films ◽

Boron Doped ◽

Doped Silicon

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Electrical and structural properties of rapid thermally annealed boron‐doped silicon films deposited by plasma‐enhanced chemical‐vapor deposition

Journal of Applied Physics ◽

10.1063/1.357306 ◽

1994 ◽

Vol 76 (8) ◽

pp. 4682-4688 ◽

Cited By ~ 6

Author(s):

P. Jeanjean ◽

J. Sicart ◽

P. Sellitto ◽

J. L. Robert ◽

E. Bustarret ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Structural Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

Silicon Films ◽

Boron Doped ◽

Doped Silicon

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Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1286714 ◽

2000 ◽

Vol 18 (5) ◽

pp. 2389 ◽

Cited By ~ 38

Author(s):

P. Temple-Boyer ◽

L. Jalabert ◽

L. Masarotto ◽

J. L. Alay ◽

J. R. Morante

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Nitrogen Doped ◽

Doped Silicon ◽

Pressure Chemical

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ChemInform Abstract: LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION OF BORON DOPED SILICON FILMS

Chemischer Informationsdienst ◽

10.1002/chin.197351051 ◽

1973 ◽

Vol 4 (51) ◽

pp. no-no

Author(s):

LOU H. HALL ◽

K. M. KOLIWAD

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Silicon Films ◽

Boron Doped ◽

Doped Silicon

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Optimization of Deposition Parameters for Thin Silicon Films on Flexible Substrates in a Hot-Wire Chemical Vapor Deposition Reactor

Materials Science Forum ◽

10.4028/www.scientific.net/msf.514-516.475 ◽

2006 ◽

Vol 514-516 ◽

pp. 475-482 ◽

Cited By ~ 1

Author(s):

Pedro Alpuim ◽

M. Ribeiro ◽

Sergej Filonovich

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Silicon Films ◽

Flexible Substrates ◽

Hot Wire ◽

Chemical Vapor Deposition Reactor ◽

Deposition Parameters ◽

Thin Silicon

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Boron Doped p-type Hydrogenated Nanocrystalline Silicon Films Grown by Hot Wire Chemical Vapor Deposition

10.1063/1.3643596 ◽

2011 ◽

Cited By ~ 1

Author(s):

M. R. Pramod ◽

M. M. Kamble ◽

V. S. Waman ◽

A. M. Funde ◽

V. G. Sathe ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Nanocrystalline Silicon ◽

Silicon Films ◽

Hot Wire ◽

Boron Doped ◽

P Type ◽

Nanocrystalline Silicon Films

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