Electrical and structural properties of rapid thermally annealed boron‐doped silicon films deposited by plasma‐enhanced chemical‐vapor deposition

1994 ◽  
Vol 76 (8) ◽  
pp. 4682-4688 ◽  
Author(s):  
P. Jeanjean ◽  
J. Sicart ◽  
P. Sellitto ◽  
J. L. Robert ◽  
E. Bustarret ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Structural Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Boron Doped ◽  
Doped Silicon

Photoluminescence and Raman Scattering Correlated Study of Boron-Doped Silicon Nanowires

2005 ◽  
Vol 23 ◽  
pp. 137-140
Author(s):  
X.B. Zeng ◽  
X.B. Liao ◽  
S.T. Dai ◽  
B. Wang ◽  
Y.Y. Xu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Raman Scattering ◽  
Amorphous Silicon ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Boron Doped ◽  
Doped Silicon ◽  
81.15 Gh

Boron-doped (B-doped) silicon nanowires (SiNWS) have been prepared and characterized by Raman scattering and photoluminescence (PL). B-doped SiNWS were grown by plasma enhanced chemical vapor deposition (PECVD), using diborane (B2H6) as the dopant gas. Raman spectra show a band at 480cm-1,which is attributed to amorphous silicon. Photoluminescence at room temperature exhibits three distinct emission peaks at 1.34ev,1.42ev,1.47ev. Possible reason for these is suggested. PACS: 36.40._c; 81.15.Gh; 81.20._n

Theoretical studies of H2 desorption processes in chemical vapor deposition of boron-doped silicon surfaces

1999 ◽  
Vol 436 (1-3) ◽  
pp. 175-192 ◽  
Author(s):  
P.Jeffrey Hay ◽  
Randall C. Boehm ◽  
Joel D. Kress ◽  
Richard L. Martin
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Surfaces ◽  
Theoretical Studies ◽  
Boron Doped ◽  
Doped Silicon
Sign in / Sign up

Export Citation Format

Share Document