The nature of the defects generated from plasma exposure in pristine and ultraviolet-cured low-k organosilicate glass

2011 ◽  
Vol 98 (25) ◽  
pp. 252902 ◽  
Author(s):  
H. Ren ◽  
G. Jiang ◽  
G. A. Antonelli ◽  
Y. Nishi ◽  
J. L. Shohet
Keyword(s):  
Plasma Exposure ◽  
Organosilicate Glass ◽  
Low K

Spectroscopic Ellipsometry as a Potential In-Line Optical Metrology Tool For Relative Porosity Measurements of Low- K Dielectric Films

2001 ◽  
Vol 697 ◽  
Author(s):  
N.V. Edwards ◽  
J. Vella ◽  
Q. Xie ◽  
S. Zollner ◽  
D. Werho ◽  
...  
Keyword(s):  
Optical Properties ◽  
Spectral Range ◽  
Spectroscopic Ellipsometry ◽  
Optical Metrology ◽  
Dielectric Films ◽  
Electron Densities ◽  
Organosilicate Glass ◽  
Relative Porosity ◽  
Low K ◽  
Porosity Measurements

AbstractThe optical properties of organosilicate glass (OSG) samples were investigated with spectroscopic ellipsometry. We found that samples with dramatically higher hardness had higher indices of refraction (RI) and thus higher electron densities and lower relative porosities than films with lower hardnesses. The reverse was true for films with low hardnesses. As well, these films did not have the same optical properties as porous SiO2 across the spectral range measured, which we show has significant implications for the in-line optical metrology of these materials.

Subcritical Delamination of Dielectric and Metal Films from Low-k Organosilicate Glass (OSG) Thin Films in Buffered pH Solutions

2003 ◽  
Vol 795 ◽  
Author(s):  
Y. Lin ◽  
J. J. Vlassak ◽  
T. Y. Tsui ◽  
A. J. McKerrow
Keyword(s):  
Thin Films ◽  
Ph Value ◽  
Dielectric Materials ◽  
Barrier Films ◽  
Interface Delamination ◽  
Organosilicate Glass ◽  
Controlled Fracture ◽  
Ph Buffer ◽  
Subcritical Fracture ◽  
Low K

ABSTRACTUnderstanding subcritical fracture of low-k dielectric materials and barrier thin films in buffered solutions of different pH value is of both technical and scientific importance. Subcritical delamination of dielectric and metal barrier films from low-k organosilicate glass (OSG) films in pH buffer solutions was studied in this work. Crack path and subcritical fracture behavior of OSG depends on the choice of barrier layers. For the OSG/TaN system, fracture takes place in the OSG layer near the interface, while in OSG/SiNx system, delamination occurs at the interface. Delamination behavior of both systems is well described by a hyperbolic sine model that had been developed previously based on a chemical reaction controlled fracture process at the crack tip. The threshold toughness of both systems decreases linearly with increasing pH value. The slopes of the reaction-controlled regime of the crack velocity curves for both systems are independent of pH as predicted by the model. Near transport-controlled regime behavior was observed in OSG/TaN system.

Impact of plasma exposure on organic low-k materials

2009 ◽  
Author(s):  
E. Smirnov ◽  
A. K. Ferchichi ◽  
C. Huffman ◽  
M. R. Baklanov
Keyword(s):  
Plasma Exposure ◽  
Low K

Moisture Adsorption in Plasma-Damaged Porous Low-k Dielectrics

2008 ◽  
Vol 1079 ◽  
Author(s):  
Ekaterina Vinogradova ◽  
Casey E Smith ◽  
DW Mueller ◽  
Andrew J McKerrow ◽  
Rick Reidy
Keyword(s):  
Moisture Absorption ◽  
Deuterium Oxide ◽  
Grazing Angle ◽  
Film Surface ◽  
Ambient Conditions ◽  
Exchange Reactions ◽  
Plasma Etch ◽  
Organosilicate Glass ◽  
Altered Surface ◽  
Low K

ABSTRACTPlasma etch/ash processes can induce changes in low-k film surface/bulk chemistries and topographies resulting in increased water absorption, surface roughness, and metal intrusion. After ashing, the altered surface character of the low-k can impact wetting, adhesion, and, consequently, the resistance of subsequently deposited barrier layers. In this work, we describe the use of deuterium oxide as means of measuring moisture penetration into low-k films. Film chemistries have been monitored using grazing angle attenuated total reflectance (GATR) and transmission Fourier transform infrared spectroscopy (FTIR). To study moisture absorption in porous spin-on and CVD low-k films, unashed and ashed films have been exposed to D2O liquid and vapor treatments under “dry” nitrogen. The extent of D2O uptake, removal and exchange reactions has been studied using transmission and GATR FTIR methods because the D2O and O-D adsorption peaks are distinct from water and O-H as well as other low-k adsorptions. This method can be used to study Si-OH species because deuterium can exchange with hydrogen within silanols under ambient conditions while methyl groups are much less likely to exchange. Three different low-k films, a porous spin-on MSQ (k=2.2), a porous CVD (k=2.3), and an organosilicate glass (OSG, k=2.85) have been used. In FTIR spectra, unashed low-k films show minimal D2O adsorption. In MSQ hydrogen-ashed films, the data suggest the presence of deuterium oxide and O-D peaks. Further, D2O adsorption appears to be considerably higher for ashed films as would be expected due to the hydrophobicity of these films. In the CVD films, there does not appear to be as marked a difference. This method permits the introduction of a chemical “marker” into low-k wet and ambient processes allowing one to distinguish among adsorptions from different aqueous sources.

Impact of film structures on damage to low-k SiOCH film during plasma exposure

2009 ◽  
Author(s):  
S. Yasuhara ◽  
T. Sasaki ◽  
K. Tajima ◽  
H. Yano ◽  
S. Kadomura ◽  
...  
Keyword(s):  
Plasma Exposure ◽  
Low K

Effects of plasma and vacuum-ultraviolet exposure on the mechanical properties of low-k porous organosilicate glass

2014 ◽  
Vol 116 (4) ◽  
pp. 044103 ◽  
Author(s):  
X. Guo ◽  
J. E. Jakes ◽  
S. Banna ◽  
Y. Nishi ◽  
J. L. Shohet
Keyword(s):  
Mechanical Properties ◽  
Vacuum Ultraviolet ◽  
Ultraviolet Exposure ◽  
Organosilicate Glass ◽  
Low K

Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatment

2002 ◽  
Vol 20 (4) ◽  
pp. 1561 ◽  
Author(s):  
T. C. Chang ◽  
P. T. Liu ◽  
Y. S. Mor ◽  
T. M. Tsai ◽  
C. W. Chen ◽  
...  
Keyword(s):  
Organosilicate Glass ◽  
Low K ◽  
Dielectric Degradation

Low-k Integration Using Metallic Hard Masks

2012 ◽  
Vol 187 ◽  
pp. 193-195 ◽  
Author(s):  
O. Joubert ◽  
Nicolas Possémé ◽  
Thierry Chevolleau ◽  
Thibaut David ◽  
M. Darnon
Keyword(s):  
Metal Contamination ◽  
High Sensitivity ◽  
Dielectric Materials ◽  
Plasma Exposure ◽  
Air Exposure ◽  
Hard Mask ◽  
Patterned Structures ◽  
Complex Integration ◽  
Interconnect Technology ◽  
Low K

For the 45 nm interconnect technology node, porous dielectric materials (p-SiOCH) have been introduced, leading to complex integration issues due to their high sensitivity upon FC etching and ashing plasma exposure [1, 2]. Thanks to Metallic hard mask (MHM) integration high selectivities towards dielectric materials (>100:1) can be reached and minimizes exposure of p-SiOCH films to ashing plasmas. However MHM such as TiN generates other issues such as i) metal contamination in the patterned structures and ii) growth of metal based residues on the top of the hard mask [3, 4, 5]. The residues growth, which is air exposure time dependent, directly impacts the yield performance with the generation of via and line opens [.

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