scholarly journals Si-interdiffusion in heavily doped AlN-GaN-based quantum well intersubband photodetectors

2011 ◽  
Vol 98 (24) ◽  
pp. 241101 ◽  
Author(s):  
Daniel Hofstetter ◽  
Joab Di Francesco ◽  
Denis Martin ◽  
Nicolas Grandjean ◽  
Yulia Kotsar ◽  
...  
Keyword(s):  
Quantum Well ◽  
Heavily Doped

Photocurrent spectra of heavily doped terahertz quantum well photodetectors

2010 ◽  
Vol 97 (2) ◽  
pp. 021114 ◽  
Author(s):  
X. G. Guo ◽  
R. Zhang ◽  
H. C. Liu ◽  
A. J. SpringThorpe ◽  
J. C. Cao
Keyword(s):  
Quantum Well ◽  
Heavily Doped ◽  
Photocurrent Spectra

HEAVILY DOPED HARMONIC CONFINED QUANTUM WIRES

1992 ◽  
Vol 06 (29) ◽  
pp. 1881-1885
Author(s):  
I.C. DA CUNHA LIMA ◽  
A. FERREIRA DA SILVA
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Density Of States ◽  
Gate Voltage ◽  
Quantum Wires ◽  
Impurity Band ◽  
Semiconductor Heterostructures ◽  
One Dimensional ◽  
Impurity Density ◽  
Heavily Doped

Quasi-one-dimensional channels have already been fabricated by holographic lithography on semiconductor heterostructures. We study the formation of an impurity band for shallow donors located inside the channels assuming they have been created by applying a modulated gate voltage in a quantum well of AlxGa1−xAs−GaAs. We calculate the changes in the impurity density of states as a function of the gate voltage. It is shown that the increase of the applied gate voltage leads to higher binding energy and larger impurity bandwidth.

Temperature and carrier density dependence of mobility in a heavily doped quantum well

1994 ◽  
Vol 64 (24) ◽  
pp. 3276-3278 ◽  
Author(s):  
Mark H. Somerville ◽  
David R. Greenberg ◽  
Jesús A. del Alamo
Keyword(s):  
Quantum Well ◽  
Density Dependence ◽  
Carrier Density ◽  
Heavily Doped
Sign in / Sign up

Export Citation Format

Share Document