Photocurrent spectra of heavily doped terahertz quantum well photodetectors

2010 ◽  
Vol 97 (2) ◽  
pp. 021114 ◽  
Author(s):  
X. G. Guo ◽  
R. Zhang ◽  
H. C. Liu ◽  
A. J. SpringThorpe ◽  
J. C. Cao
Keyword(s):  
Quantum Well ◽  
Heavily Doped ◽  
Photocurrent Spectra

scholarly journals Photocurrent spectra of very long wavelength GaAs/AlGaAs quantum well infrared photodetector

2003 ◽  
Vol 52 (2) ◽  
pp. 503
Author(s):  
Yuan Xian-Zhang ◽  
Lu Wei ◽  
Li Ning ◽  
Chen Xiao-Shuang ◽  
Shen Xue-Chu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Photodetector ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetector ◽  
Photocurrent Spectra

Bias-Polarity-Dependent Photocurrent Spectra of Terahertz Stepped-Quantum-Well Photodetectors

2019 ◽  
Vol 12 (2) ◽  
Author(s):  
GuiXue Zhang ◽  
XuGuang Guo ◽  
HaiXia Wang ◽  
DiXiang Shao ◽  
ZhangLong Fu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Photocurrent Spectra

scholarly journals Si-interdiffusion in heavily doped AlN-GaN-based quantum well intersubband photodetectors

2011 ◽  
Vol 98 (24) ◽  
pp. 241101 ◽  
Author(s):  
Daniel Hofstetter ◽  
Joab Di Francesco ◽  
Denis Martin ◽  
Nicolas Grandjean ◽  
Yulia Kotsar ◽  
...  
Keyword(s):  
Quantum Well ◽  
Heavily Doped

HEAVILY DOPED HARMONIC CONFINED QUANTUM WIRES

1992 ◽  
Vol 06 (29) ◽  
pp. 1881-1885
Author(s):  
I.C. DA CUNHA LIMA ◽  
A. FERREIRA DA SILVA
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Density Of States ◽  
Gate Voltage ◽  
Quantum Wires ◽  
Impurity Band ◽  
Semiconductor Heterostructures ◽  
One Dimensional ◽  
Impurity Density ◽  
Heavily Doped

Quasi-one-dimensional channels have already been fabricated by holographic lithography on semiconductor heterostructures. We study the formation of an impurity band for shallow donors located inside the channels assuming they have been created by applying a modulated gate voltage in a quantum well of AlxGa1−xAs−GaAs. We calculate the changes in the impurity density of states as a function of the gate voltage. It is shown that the increase of the applied gate voltage leads to higher binding energy and larger impurity bandwidth.

GaAs/AlGaAs Intersubband MID-Infrared Emitter

1997 ◽  
Vol 484 ◽  
Author(s):  
G. Strasser ◽  
S. Gianordoli ◽  
L. Hvozdara ◽  
H. Bichl ◽  
K. Unterrainer ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Quantum Well ◽  
Material System ◽  
Mid Infrared ◽  
Quantum Well Structures ◽  
Emit Radiation ◽  
Infrared Emitter ◽  
Cladding Layers ◽  
Photocurrent Spectra

AbstractWe report here the growth and characterization of intersubband quantum well structures based on the GaAs/AlGaAs material system, designed to emit radiation at approximately 7 micrometers. We present transport behavior, infrared photocurrent spectra, and electroluminescence data. First attempts to fabricate a laser structure from this devices encountered difficulties with the electrical properties of the AIGaAs waveguide cladding layers. Thus, we present measurements with different waveguide concepts as doped AlAs cladding layers and doped superlattice cladding structures.

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