Temperature and carrier density dependence of mobility in a heavily doped quantum well

1994 ◽  
Vol 64 (24) ◽  
pp. 3276-3278 ◽  
Author(s):  
Mark H. Somerville ◽  
David R. Greenberg ◽  
Jesús A. del Alamo
Keyword(s):  
Quantum Well ◽  
Density Dependence ◽  
Carrier Density ◽  
Heavily Doped

scholarly journals Carrier density dependence of plasmon-enhanced nonradiative energy transfer in a hybrid quantum well-quantum dot structure

2015 ◽  
Vol 23 (2) ◽  
pp. 1377 ◽  
Author(s):  
L.J. Higgins ◽  
V.D. Karanikolas ◽  
C.A. Marocico ◽  
A.P. Bell ◽  
T. C. Sadler ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Quantum Dot ◽  
Quantum Well ◽  
Density Dependence ◽  
Carrier Density ◽  
Nonradiative Energy Transfer

Structural and carrier density dependence of carrier lifetime in InGaAs/GaAs multiple‐quantum‐well lasers

1996 ◽  
Vol 69 (21) ◽  
pp. 3158-3160 ◽  
Author(s):  
K. Czotscher ◽  
S. Weisser ◽  
E. C. Larkins ◽  
J. Fleissner ◽  
J. D. Ralston ◽  
...  
Keyword(s):  
Quantum Well ◽  
Density Dependence ◽  
Carrier Density ◽  
Carrier Lifetime ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

scholarly journals Carrier-density dependence of the photoluminescence lifetimes in ZnCdSe/ZnSSe quantum wells at room temperature

1999 ◽  
Vol 74 (22) ◽  
pp. 3359-3361 ◽  
Author(s):  
C. Jordan ◽  
J. F. Donegan ◽  
J. Hegarty ◽  
B. J. Roycroft ◽  
S. Taniguchi ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Density Dependence ◽  
Carrier Density ◽  
Room Temperature

scholarly journals Multilayer graphene shows intrinsic resistance peaks in the carrier density dependence

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Taiki Hirahara ◽  
Ryoya Ebisuoka ◽  
Takushi Oka ◽  
Tomoaki Nakasuga ◽  
Shingo Tajima ◽  
...  
Keyword(s):  
Density Dependence ◽  
Carrier Density ◽  
Multilayer Graphene ◽  
Intrinsic Resistance
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