Modeling of intersubband and free-carrier absorption coefficients in heavily doped conduction-band quantum-well structures

1999 ◽  
Vol 35 (10) ◽  
pp. 1491-1501 ◽  
Author(s):  
Kyoung-Youm Kim ◽  
Byoungho Lee ◽  
Chanho Lee
Keyword(s):  
Quantum Well ◽  
Conduction Band ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Absorption Coefficients ◽  
Quantum Well Structures ◽  
Carrier Absorption ◽  
Heavily Doped

Band‐to‐band and free‐carrier absorption coefficients in heavily doped silicon at 4 K and at room temperature

1991 ◽  
Vol 69 (6) ◽  
pp. 3687-3690 ◽  
Author(s):  
S. C. Jain ◽  
A. Nathan ◽  
D. R. Briglio ◽  
D. J. Roulston ◽  
C. R. Selvakumar ◽  
...  
Keyword(s):  
Room Temperature ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Absorption Coefficients ◽  
Doped Silicon ◽  
Carrier Absorption ◽  
Heavily Doped
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