Crystallinity and average grain size of films grown by chemical vapor deposition

1995 ◽  
Vol 78 (6) ◽  
pp. 3809-3811 ◽  
Author(s):  
S. K. Kim ◽  
Hong H. Lee
Keyword(s):  
Grain Size ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Average Grain Size

Quantitative Modelling of Nucleation Kinetics in Experiments for Poly-Si Growth on Sio2 by Hot-Wire Chemical Vapor Deposition

2001 ◽  
Vol 664 ◽  
Author(s):  
Maribeth Swiatek ◽  
Jason K. Holt ◽  
Harry A. Atwater
Keyword(s):  
Activation Energy ◽  
Grain Size ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Hot Wire ◽  
Nucleation Kinetics ◽  
Temperature Dependent ◽  
Cluster Density

ABSTRACTWe apply a rate-equation pair binding model of nucleation kinetics [1] to the nucleation of Si islands grown by hot-wire chemical vapor deposition on SiO2 substrates. Previously, we had demonstrated an increase in grain size of polycrystalline Si films with H2 dilution from 40 nm using 100 mTorr of 1% SiH4 in He to 85 nm with the addition of 20 mTorr H2. [2] This increase in grain size is attributed to atomic H etching of Si monomers rather than stable Si clusters during the early stages of nucleation, decreasing the nucleation density. Atomic force microscopy (AFM) measurements show that the nucleation density increases sublinearly with time at low coverage, implying a fast nucleation rate until a critical density is reached, after which grain growth begins. The nucleation density decreases with increasing H2 dilution (H2:SiH4), which is an effect of the etching mechanism, and with increasing temperature, due to enhanced Si monomer diffusivity on SiO2. From temperature-dependent measurements, we estimate the activation energy for surface diffusion of Si monomers on SiO2 to be 0.47 ± 0.09 eV. Simulations of the temperature-dependent supercritical cluster density lead to an estimated activation energy of 0.42 eV ± 0.01 eV and a surface diffusion coefficient prefactor of 0.1 ± 0.03 cm2/s. H2-dilution-dependent simulations of the supercritical cluster density show an approximately linear relationship between the H2 dilution and the etch rate of clusters.

Rapid and mass-producible synthesis of high-crystallinity MoSe2 nanosheets by ampoule-loaded chemical vapor deposition

Nanoscale ◽  
2020 ◽  
Vol 12 (13) ◽  
pp. 6991-6999 ◽  
Author(s):  
Na Liu ◽  
Woong Choi ◽  
Hyeongi Kim ◽  
Chulseung Jung ◽  
Jeonghun Kim ◽  
...  
Keyword(s):  
Grain Size ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Rapid Growth ◽  
Chemical Vapor ◽  
High Crystallinity

Rapid growth of high-crystalline MoSe2 nanosheets with grain size of up to ∼100 μm and yield of milligrams per hour.

Nanocrystalline ZrO2thin films on silicon fabricated by pulsed-pressure metalorganic chemical vapor deposition (PP-MOCVD)

2008 ◽  
Vol 23 (8) ◽  
pp. 2202-2211 ◽  
Author(s):  
L. Ramirez ◽  
M.L. Mecartney ◽  
S.P. Krumdieck
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Tetragonal Zirconia ◽  
Chemical Vapor ◽  
Optimal Growth ◽  
Stages Of Growth ◽  
Average Grain Size ◽  
Metalorganic Chemical

ZrO2films deposited on silicon (100) substrates using pulsed-pressure metalorganic chemical vapor deposition (PP-MOCVD) with zirconium n-propoxide (ZnP) Zr(OC3H7)4were dense and fully crystalline for substrate temperatures of 500 to 700 °C. Film thicknesses were 40 to 815 nm thick, measured after growth using ellipsometry and scanning electron microscopy (SEM). The growth rate was between 0.1 μm/h at 500 °C and 1 μm/h at 700 °C. Transmission electron microscopy (TEM) and x-ray diffraction (XRD) indicated an average grain size of 10 to 20 nm. There was a random orientation of cubic/tetragonal zirconia at the highest experimental temperature of 700 °C. SEM and atomic force microscopy (AFM) was used to characterize island height of discontinuous films in the initial stages of growth where defects in the substrate caused preferred nucleation of isolated particles. At later stages of growth, the average surface roughness of continuous films was 30 nm, which revealed a more uniform growth had developed. A growth model is proposed, and optimal growth conditions are suggested for targeted microstructures of ZrO2films.

Chemical Vapor Deposition of Binary Metal Germanides

1990 ◽  
Vol 187 ◽  
Author(s):  
M.J. Hampden-Smith ◽  
J. Garvey ◽  
D. Lei ◽  
J.C. Huffman
Keyword(s):  
Thermal Decomposition ◽  
Grain Size ◽  
Chemical Vapor Deposition ◽  
Transition Metal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Solution Model ◽  
Binary Metal ◽  
Decomposition Experiments

AbstractA series of transition metal substituted germacyclopent-3-ene compounds containing transition metal-germanium bonds have been prepared with supporting ligands which are designed to be easily removed either thermally or photochemically. In solution, model thermal decomposition experiments show that either the geramanium or the transition metal substituents may be removed, depending on the nature of the metal. Preliminary hot-wall CVD experiments using manganese and cobalt derivatives result in films with small grain size.

Effects of Process Parameters on Graphene Growth Via Low-Pressure Chemical Vapor Deposition

2020 ◽  
Vol 8 (3) ◽  
Author(s):  
Byoungdo Lee ◽  
Weishen Chu ◽  
Wei Li
Keyword(s):  
Grain Size ◽  
Chemical Vapor Deposition ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Growth ◽  
Low Pressure ◽  
Large Set ◽  
Graphene Growth ◽  
Pressure Chemical

Abstract Graphene has attracted enormous research interest due to its extraordinary material properties. Process control to achieve high-quality graphene is indispensable for graphene-based applications. This research investigates the effects of process parameters on graphene quality in a low-pressure chemical vapor deposition (LPCVD) graphene growth process. A fractional factorial design of experiment is conducted to provide understanding on not only the main effect of process parameters, but also the interaction effect among them. Graphene quality including the number of layers and grain size is analyzed. To achieve monolayer graphene with large grain size, a condition with low CH4–H2 ratio, short growth time, high growth pressure, high growth temperature, and slow cooling rate is recommended. This study considers a large set of process parameters with their interaction effects and provides guidelines to optimize graphene growth via LPCVD focusing on the number of graphene layers and the grain size.

On the oxidation resistance of superhard Ti–Si–C–N coatings

2008 ◽  
Vol 23 (9) ◽  
pp. 2420-2428 ◽  
Author(s):  
Yan Guo ◽  
Shengli Ma ◽  
Kewei Xu ◽  
Tom Bell ◽  
Xiaoying Li ◽  
...  
Keyword(s):  
Grain Size ◽  
Chemical Vapor Deposition ◽  
Oxidation Resistance ◽  
Vapor Deposition ◽  
Silicon Content ◽  
Oxidation Behavior ◽  
Oxidation Process ◽  
Chemical Vapor ◽  
Surface Morphologies ◽  
The Relationship

The oxidation behavior of three types of plasma-enhanced chemical vapor deposition (PECVD) processed Ti–Si–C–N coatings with silicon content ranging from 4.3 to 11.6 at.% has been investigated at high temperatures. Systematic characterization was conducted to study the evolution of composition, phase constituents, hardness, surface morphologies, microstructures, and grain size during oxidation. A two-stage oxidation process was observed between 700 and 1000 °C for all three coatings. Experimental results indicate that a superhardness of 40 GPa can be maintained up to 700, 800, and 850 °C for 4.3, 7.4, and 11.6 at.% Si coatings, respectively; the dual-phased 7.4 and 11.6 at.% Si coatings show a better oxidation resistance than the single-phased 4.3 at.% Si coating. On the basis of the results, a mechanism is proposed to explain the relationship between the nanostructure and oxidation behavior.

Effect of Carbon Concentration on the Optical Properties of Nanocrystalline Diamond Films Deposited by Hot-Filament Chemical Vapor Deposition Method

2008 ◽  
Vol 8 (5) ◽  
pp. 2534-2539
Author(s):  
Linjun Wang ◽  
Jianmin Liu ◽  
Ling Ren ◽  
Qingfeng Su ◽  
Weimin Shi ◽  
...  
Keyword(s):  
Grain Size ◽  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Carbon Concentration ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Grain ◽  
Hot Filament

With reducing diamond grain size to nano-grade, the increase of grain boundaries and non-diamond phase will result in the change of the optical properties of chemical vapor deposition (CVD) diamond films. In this paper, the structure, morphology and optical properties of nanocrystalline diamond (NCD) films, deposited by hot-filament chemical vapor deposition (HFCVD) method under different carbon concentration, are investigated by SEM, Raman scattering spectroscopy, as well as optical transmission spectra and spectroscopic ellipsometry. With increasing the carbon concentration during the film deposition, the diamond grain size is reduced and thus a smooth diamond film can be obtained. According to the data on the absorption coefficient in the wavelength range from 200 to 1100 nm, the optical gap of the NCD films decreases from 4.3 eV to 3.2 eV with increasing the carbon concentration from 2.0% to 3.0%. From the fitting results on the spectroscopic ellipsometric data with a four-layer model in the photon energy range of 0.75–1.5 eV, we can find the diamond film has a lower refractive index (n) and a higher extinction coefficient (k) when the carbon concentration increases.

Growth and Characterization of Polycrystalline Diamond Thin Films on Porous Silicon by Hot Filament Chemical Vapor Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
S. Mirzakuchaki ◽  
E. J. Charlson ◽  
E. M. Charlson ◽  
T. Stacy ◽  
F. Shahedipour ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Porous Silicon ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Electrochemical Process ◽  
Nucleation Density ◽  
High Quality ◽  
Average Grain Size ◽  
Hot Filament

AbstractHot filament chemical vapor deposition (HFCVD) was utilized to grow high quality diamond film on porous silicon (PS) substrates to a thickness of 5–6 μm. Boron-doped silicon substrates of <100> orientation and resistivity of 5–15 ohm-cm were anodized by the electrochemical process to form PS. A slurry of diamond paste (1/4 micron average grain size) was rubbed on the samples for a few seconds before introduction into the chamber. Diamond film growth on the PS has the advantages of shorter incubation time and higher nucleation density as evident from scanning electron microscopy (SEM). The results of X-ray diffraction confirm the growth of predominatly (111) oriented high quality diamond film. Electrical properties were also studied by sputtering circular gold contacts on top of diamond film and measuring current-voltage (I-V) characteristics.

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