Comment on ‘‘Transient nucleation in solid‐state crystallization of a‐Si films’’ [J. Appl. Phys. 75, 2884 (1994)]

1995 ◽  
Vol 78 (7) ◽  
pp. 4811-4812 ◽  
Author(s):  
Vitaly A. Shneidman
Keyword(s):  
Solid State ◽  
Transient Nucleation ◽  
Si Films

On the role of diffusion in phase selection during reactions at interfaces

1992 ◽  
Vol 7 (2) ◽  
pp. 367-373 ◽  
Author(s):  
C.V. Thompson
Keyword(s):  
Solid State ◽  
Thermodynamic Analysis ◽  
Phase Formation ◽  
Phase Selection ◽  
Transient Nucleation ◽  
State Amorphization

It is argued that interdiffusion must precede nucleation of new phases during reactions at interfaces between compositionally different phases. The relative rates at which elemental components diffuse in the reacting phases control the sequence in which phases can form, and can also strongly affect the relative nucleation rates of alloy products, especially in the transient nucleation regime. While detailed predictions of the relative nucleation rates require usually unavailable knowledge of the energies of the relevant interfaces, in some cases, knowledge of the relevant diffusivities, along with a thermodynamic analysis, can lead to predictions of likely phase formation sequences. These concepts are used to explain the association of diffusional asymmetry with systems that undergo solid state amorphization, and to specify semiquantitatively the degree of asymmetry required for solid state amorphization.

Effect of the Crystallographic Orientation of Underlying Poly-Si on the Thermal Stability of the TiSi2 Film

1992 ◽  
Vol 280 ◽  
Author(s):  
Y. W. Kim ◽  
I. K. Kim ◽  
N. I. Lee ◽  
J. W. Ko ◽  
S. T. Ahn ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Solid State ◽  
Surface Energy ◽  
Microstructural Evolution ◽  
Solid State Reaction ◽  
Crystallographic Orientation ◽  
Amorphous Si ◽  
Si Films ◽  
Thermal Stability Of

ABSTRACTThe effect of the crystallographic orientation of underlying poly-Si film on the thermal stability of the TiSi2 film was studied. Different preferred orientations of the poly-Si film were obtained by annealing poly-Si or amorphous Si films at various temperatures. The TiSi2 film was formed by the solid-state reaction of the Ti film sputtered on the poly-Si film. The thermal stability of the TiSi2 film was evaluated by changes in the sheet resistance and microstructural evolution during furnace anneals. The TiSi2 film on poly-Si with the <110> preferred orientation shows more stable conductivity during high temperature anneals than with the <111> orientation. The surface energy of underlying poly-Si is expected to influence the thermal stability of the TiSi2/poly-Si structure significantly. Better thermal stability of the TiSi2 film can be obtained by the higher surface energy of underlying poly-Si.

A transient nucleation model for solid state amorphisation

1988 ◽  
Vol 6 (11-12) ◽  
pp. 401-405 ◽  
Author(s):  
R.J. Highmore ◽  
A.L. Greer ◽  
J.A. Leake ◽  
J.E. Evetts
Keyword(s):  
Solid State ◽  
Nucleation Model ◽  
Transient Nucleation

Crystal forms by solid‐state recrystallization of amorphous Si films on SiO2

1991 ◽  
Vol 59 (6) ◽  
pp. 653-655 ◽  
Author(s):  
T. Noma ◽  
T. Yonehara ◽  
H. Kumomi
Keyword(s):  
Solid State ◽  
Crystal Forms ◽  
Amorphous Si ◽  
Si Films ◽  
Solid State Recrystallization

Manipulation of Nucleation Sites in Solid-State Crystallization of Amorphous Si Films

1990 ◽  
Vol 202 ◽  
Author(s):  
Hideya Kumomi ◽  
Takao Yonehara
Keyword(s):  
Solid State ◽  
Ion Implantation ◽  
Size Distribution ◽  
Narrow Size Distribution ◽  
Amorphous Films ◽  
Nucleation Sites ◽  
Preferential Nucleation ◽  
Amorphous Si ◽  
Si Films ◽  
Si Ion Implantation

ABSTRACTNucleation sites are manipulated in amorphous Si films to control grain location and the size distribution during the solid-state crystallization. The principle of the method is theoretically investigated. Nucleation is suppressed and the sites are periodically formed in the plane of amorphous films by 2-step Si ion implantation. Thermal annealing causes preferential nucleation of single nuclei at the artificial sites and they grow laterally in the film. Consequently, 3 μm large grains were arranged in a matrix with a narrow size distribution.

Solid-state synthesis of single phase Mg2 Si films on Si substrates deposited at various sputtering powers

2013 ◽  
Vol 10 (12) ◽  
pp. 1854-1856
Author(s):  
Qingquan Xiao ◽  
Quan Xie ◽  
Qian Chen ◽  
Jinmin Zhang
Keyword(s):  
Solid State ◽  
Single Phase ◽  
Solid State Synthesis ◽  
Si Substrates ◽  
Si Films

Solid‐state epitaxial growth of deposited Si films

1979 ◽  
Vol 35 (3) ◽  
pp. 280-282 ◽  
Author(s):  
M. von Allmen ◽  
S. S. Lau ◽  
J. W. Mayer ◽  
W. F. Tseng
Keyword(s):  
Solid State ◽  
Epitaxial Growth ◽  
Si Films

Preparation of Thin Cadmium Telluride Samples for Electron Microscope Studies

1974 ◽  
Vol 32 ◽  
pp. 548-549
Author(s):  
T. J. Magee ◽  
J. Peng ◽  
J. Bean
Keyword(s):  
Electron Microscope ◽  
Sulfuric Acid ◽  
Solid State ◽  
Sample Preparation ◽  
Cadmium Telluride ◽  
Potassium Dichromate ◽  
Optical Components ◽  
The Past ◽  
Solid State Devices

Cadmium telluride has become increasingly important in a number of technological applications, particularly in the area of laser-optical components and solid state devices, Microstructural characterizations of the material have in the past been somewhat limited because of the lack of suitable sample preparation and thinning techniques. Utilizing a modified jet thinning apparatus and a potassium dichromate-sulfuric acid thinning solution, a procedure has now been developed for obtaining thin contamination-free samples for TEM examination.

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