Solid-state synthesis of single phase Mg2 Si films on Si substrates deposited at various sputtering powers

2013 ◽  
Vol 10 (12) ◽  
pp. 1854-1856
Author(s):  
Qingquan Xiao ◽  
Quan Xie ◽  
Qian Chen ◽  
Jinmin Zhang
2012 ◽  
Vol 534 ◽  
pp. 110-113 ◽  
Author(s):  
Fei Shi ◽  
Peng Cheng Du ◽  
Jing Xiao Liu ◽  
Ji Wei Wu ◽  
Chun Yuan Luo

Using basic magnesium carbonate (Mg(OH)2•4MgCO3•6H2O) and SiO2 as raw materials, forsterite (Mg2SiO4) was prepared by solid state synthesis process. The optimal process for synthesizing Mg2SiO4 was obtained by adjusting Mg/Si molar ratio and sintering temperature. The crystal phase of the obtained Mg2SiO4 powder was determined by X-ray diffraction (XRD). The results indicate that the single-phase Mg2SiO4 powder can be obtained when the mixtures with Mg/Si molar ratio of 2.05~2.01 were sintered at 1350°C for 3h in the air. The as-prepared Mg2SiO4 ceramic samples which were sintered at 1300~1360°C showed better dielectric properties with εr=7.4 and tanδ =7.5×10-4.


1996 ◽  
Vol 11 (1) ◽  
pp. 162-168 ◽  
Author(s):  
Zhimin Zhong ◽  
Patrick K. Gallagher

BaTi4O9 and PbxBa1−x Ti4O9, where x is 0.1, 0.2, 0.3, 0.4, or 0.5, have been prepared by a combustion synthesis process. The process starts with spray drying aqueous solutions of Pb(NO3)2, Ba(NO3)2, TiO(NO3)2, and β-alanine with appropriate ratios. Combustion reactions occur when heating the spray-dried products to 300 °C, which convert them to BaTi4O9 and PbxBa1−xTi4O9 directly. PbxBa1−xTi4O9 (x ≧ 0.1) are low temperature, metastable phases and have not been reported before. Pb0.5Ba0.5Ti4O9 is unstable above 800 °C and cannot be sintered. All PbxBa1−xTi4O9 compositions will decompose by 1300 °C, the temperature for solid state synthesis of BaTi4O9. Single-phase PbxBa1−xTi4O9 (x = 0.1, 0.2, 0.3, 0.4), however, have been sintered at relatively lower temperatures.


2010 ◽  
Vol 163 ◽  
pp. 204-207 ◽  
Author(s):  
Izabela Jendrzejewska ◽  
Paweł Zajdel ◽  
Jerzy Mroziński ◽  
Ewa Maciążek ◽  
Tomasz Goryczka ◽  
...  

Single phase materials with general formula CdxMeyCr2Se4 (where Me = Mn, Sn) were obtained using solid state synthesis method. Both compounds are ferromagnets with TC =115K (Sn) and 135K (Mn). The values of Curie-Weiss parameter ΘC-W = 135K (Sn) and 145K (Mn) are higher than respective values of TC indicating a presence of competing antiferromagnetic component. The values of lattice parameters are consistent with Sn and Mn replacing Cd. Slight cadmium deficiency has been also observed.


1996 ◽  
pp. 409 ◽  
Author(s):  
S. J. Clarke ◽  
A. C. Duggan ◽  
A. J. Fowkes ◽  
A. Harrison ◽  
R. M. Ibberson ◽  
...  

ChemInform ◽  
2010 ◽  
Vol 27 (22) ◽  
pp. no-no
Author(s):  
S. J. CLARKE ◽  
A. C. DUGGAN ◽  
A. J. FOWKES ◽  
A. HARRISON ◽  
R. M. IBBERSON ◽  
...  

Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.


2011 ◽  
Vol 3 (7) ◽  
pp. 335-340
Author(s):  
Ashok Vishram Borhade ◽  
◽  
Vishwas Bhaskar Gaikwad ◽  
Yogeshwar Rajaram Baste

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